Product Specification www.jmnic.com BUV46A Silicon Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching APPLICATIONS ·General purpose switching ·Switch mode power supplies ·Electronic ballasts for fluorescent lighting PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A IB Base current 3 A 70 W 150 ℃ -65~150 ℃ Max UNIT 1.76 ℃/W Ptot Tj Tstg TC=25℃ Total power dissipation Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case JMnic Product Specification www.jmnic.com BUV46A Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 450 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 V VCEsat-1 Collector-emitter saturation voltage IC=2A IB=0.4A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=3A IB=0.6A 5.0 V VBEsat-1 Emitter-base saturation voltage IC=2A IB=0.4A 1.3 V ICBO Collector cut-off current VCB=BVCBO IE=0 TC=125℃ 0.3 2 mA IEBO Emitter cut-off current VEB=7V IC=0 1 mA 1.0 μs 3.0 μs 0.8 μs Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=2A IB1=- IB2=0.4A VCC=150V JMnic Product Specification www.jmnic.com BUV46A Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic