ISC IRFP3006 N-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP3006,IIRFP3006
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤2.5mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
195
A
IDM
Drain Current-Single Pulsed
1080
A
PD
Total Dissipation @TC=25℃
375
W
Tj
Max. Operating Junction Temperature
175
℃
-55~175
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
0.4
℃/W
40
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP3006,IIRFP3006
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID=250μA
60
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
2.0
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=100A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
isc website:www.iscsemi.cn
CONDITIONS
MIN
TYP
MAX
UNIT
V
4.0
V
2.5
mΩ
±0.1
μA
VDS=60V; VGS= 0V
20
μA
IS=170A, VGS = 0V
1.3
V
2
isc & iscsemi is registered trademark
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