ESD5101, ESD5111 ESD Protection Diodes Micro−packaged Diodes for ESD Protection The ESD51x1 Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in smartphone, smart-watch, or many other portable / wearable applications where board space comes at a premium. www.onsemi.com MARKING DIAGRAMS ESD5101 (01005) DSN2 CASE 152AK L ESD5101P (01005) DSN2 CASE TBD* X ESD5111 (0201) WLCSP2 CASE 567AV EM ESD5111P (0201) WLCSP2 CASE TBD* XM Features • Low Capacitance (5 pF Max, I/O to GND) • Small Body Outline Dimensions ♦ • • • 01005 Size: 0.435 x 0.23 mm ♦ 0201 Size: 0.6 x 0.3 mm Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) Low ESD Clamping Voltage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C ESD ESD ±15 ±15 kV kV IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. L, E, X = Device Code M = Date Code * In Development PIN CONFIGURATION AND SCHEMATIC 1 2 See Application Note AND8308/D for further description of survivability specs. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. = ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 2 1 Publication Order Number: ESD5101/D ESD5101, ESD5111 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse Working Voltage Symbol VRWM Breakdown Voltage VBR Conditions Min Typ I/O Pin to GND IT = 1 mA, I/O Pin to GND 3.68 5.0 Reverse Leakage Current IR VRWM = 3.3 V, I/O Pin to GND ESD5101, ESD5111 Clamping Voltage TLP (Note 1) VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent (±4 kV Contact, ±4 kV Air) 5.5 IPP = 16 A IEC 61000−4−2 Level 2 equivalent (±8 kV Contact, ±15 kV Air) 6.5 Junction Capacitance CJ VR = 0 V, f = 1 MHz Max Unit 3.3 V 6.5 V 0.1 mA V 5.5 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. ORDERING INFORMATION Package Shipping† ESD5101FCT5G DSN2 (Pb−Free) 10,000 / Tape & Reel ESD5111FCT5G WLCSP2 (Pb−Free) 10,000 / Tape & Reel ESD5101PFCT5G** Side wall Isolated 01005 10,000 / Tape & Reel ESD5111PFCT5G** Side wall Isolated 0201 10,000 / Tape & Reel Device ** In Development. Contact local sales rep for availability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 ESD5101, ESD5111 10 9 9 8 8 7 7 6 6 C (pF) 10 5 4 3 3 2 2 1 0 −3.5 1 0 −3.5 −2.5 −1.5 −0.5 0.5 1.5 2.5 3.5 −2.5 −1.5 −0.5 0.5 1.5 2.5 VBIAS (V) VBIAS (V) Figure 1. ESD5101 CV Characteristics Figure 2. ESD5111 CV Characteristics 2 2 0 0 −2 −2 −4 3.5 −4 −6 −6 −8 −8 −10 −10 1.E+08 1.E+07 1.E+07 1.E+09 1.E+09 FREQUENCY (Hz) Figure 3. ESD5101 S21 Insertion Loss Figure 4. ESD5111 S21 Insertion Loss 10 10 9 9 8 8 7 6 5 4 3 7 6 5 4 3 2 2 1 0 1 0 0.5 1.E+08 FREQUENCY (Hz) CAPACITANCE (pF) CAPACITANCE (pF) 5 4 (dB) (dB) C (pF) TYPICAL CHARACTERISTICS 1.0 1.5 2.0 3.0 2.5 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. ESD5101 Capacitance over Frequency Figure 6. ESD5111 Capacitance over Frequency www.onsemi.com 3 3.0 ESD5101, ESD5111 TYPICAL CHARACTERISTICS 20 20 10 18 16 12 TLP CURRENT (A) 14 6 10 8 4 6 12 8 4 2 0 0 2 0 4 6 8 10 12 14 16 18 4 6 2 2 6 10 4 0 8 14 2 0 0 20 2 4 6 VC, VOLTAGE (V) 8 10 12 14 16 18 20 VC, VOLTAGE (V) Figure 7. ESD5101 Positive TLP I−V Curve Figure 8. ESD5111 Positive TLP I−V Curve −20 10 −20 10 −18 −18 −12 6 −10 −8 4 −6 −4 −2 0 0 2 4 6 8 10 12 14 16 18 TLP CURRENT (A) −14 −16 −14 −12 6 −10 −8 4 −6 2 −4 0 −2 0 20 8 VIEC, EQUIVALENT (kV) 8 VIEC, EQUIVALENT (kV) −16 TLP CURRENT (A) VIEC, EQUIVALENT (kV) 8 VIEC, EQUIVALENT (kV) 16 TLP CURRENT (A) 10 18 2 0 VC, VOLTAGE (V) 2 4 6 8 10 12 14 16 18 0 20 VC, VOLTAGE (V) Figure 9. ESD5101 Negative TLP I−V Curve Figure 10. ESD5111 Negative TLP I−V Curve Figure 11. ESD5111 Positive 8 kV ESD Contact Discharge Figure 12. ESD5111 Negative 8 kV ESD Contact Discharge www.onsemi.com 4 ESD5101, ESD5111 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 13. IEC61000−4−2 Spec Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 14. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 15 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. 50 W Coax Cable S Attenuator ÷ 50 W Coax Cable 10 MW IM VM DUT VC Oscilloscope Figure 14. Simplified Schematic of a Typical TLP System Figure 15. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 5 ESD5101, ESD5111 PACKAGE DIMENSIONS − ESD5111 (0201) WLCSP2, 0.6x0.3 CASE 567AV ISSUE A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B 0.02 C 2X DIM A A1 b D E e L E 0.02 C 2X TOP VIEW 0.02 C A 0.02 C A1 C SIDE VIEW MILLIMETERS MIN MAX 0.25 0.30 0.00 0.05 0.14 0.17 0.60 BSC 0.30 BSC 0.36 BSC 0.19 0.24 RECOMMENDED SOLDER FOOTPRINT* SEATING PLANE 2X 0.33 e 2X L 2X b 0.05 C A B 2X 0.28 0.81 BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS − ESD5101 (01005) DSN2, 0.435x0.23, 0.27P, (01005) CASE 152AK ISSUE A D PIN 1 INDICATOR 0.02 C 2X 2X ÉÉ ÉÉ ÉÉ 0.02 C MILLIMETERS DIM MIN MAX A 0.165 0.195 A1 −−− 0.030 b 0.177 0.193 D 0.435 BSC E 0.230 BSC e 0.270 BSC L 0.112 0.128 E TOP VIEW A 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B A1 0.02 C 2X C SIDE VIEW RECOMMENDED SOLDER FOOTPRINT* SEATING PLANE 0.44 e 2X 0.05 b M 2X C A B 0.23 1 1 L C A B 2X 0.05 M 0.16 DIMENSIONS: MILLIMETERS 2X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW www.onsemi.com 6 ESD5101, ESD5111 PACKAGE DIMENSIONS − ESD5101P (01005) www.onsemi.com 7 ESD5101, ESD5111 PACKAGE DIMENSIONS − ESD5111P (0201) ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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