TrenchPTM Power MOSFETs IXTA28P065T IXTP28P065T VDSS ID25 = = ≤ RDS(on) - 65V - 28A Ω 45mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 65 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 65 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 28 A IDM TC = 25°C, Pulse Width Limited by TJM - 90 A IA ES TC = 25°C TC = 25°C - 28 200 A mJ PD TC = 25°C 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3.0 2.5 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-220 TO-263 S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 65 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) - 4.5 V ±50 nA TJ = 125°C VGS = -10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved V - 3 μA -100 μA 45 mΩ Easy to Mount Space Savings High Power Density Applications z z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99968B(01/13) IXTA28P065T IXTP28P065T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 10Ω (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd TO-263 Outline 16 S 2030 pF 270 pF 127 pF 21 ns 29 ns 36 ns 23 ns 46 nC 20 nC 10 nC Pins: 1 - Gate 2,4 - Drain 3 - Source 1.5 °C/W RthJC RthCS TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 28 A ISM Repetitive, Pulse Width Limited by TJM -112 A VSD IF = - 28A, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = -14A, -di/dt = -100A/μs VR = - 33V, VGS = 0V Note 1. 31 34 - 2.2 TO-220 Outline ns nC A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA28P065T IXTP28P065T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -28 -110 VGS = -10V - 9V -90 -20 - 8V -16 - 7V - 9V -80 -12 - 6V -8 -70 - 8V -60 -50 - 7V -40 -30 - 6V -20 -4 - 5V -10 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 0 -1.2 -2 -4 -6 -10 -12 -14 -16 -18 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = -14A Value vs. Junction Temperature -20 1.8 VGS = -10V - 9V - 8V -24 VGS = -10V 1.6 R DS(on) - Normalized -20 - 7V -16 - 6V -12 -8 I D = - 28A 1.4 I D = -14A 1.2 1.0 0.8 - 5V -4 0.6 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -50 -2 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -14A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -30 1.7 VGS = -10V 1.6 -25 TJ = 125ºC 1.5 ID - Amperes R DS(on) - Normalized -8 VDS - Volts -28 ID - Amperes VGS = -10V -100 ID - Amperes ID - Amperes -24 1.4 1.3 1.2 -20 -15 -10 1.1 TJ = 25ºC -5 1.0 0 0.9 0 -5 -10 -15 -20 -25 -30 -35 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -40 -45 -50 -55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA28P065T IXTP28P065T Fig. 7. Input Admittance Fig. 8. Transconductance -35 24 TJ = - 40ºC -30 20 25ºC -25 g f s - Siemens ID - Amperes 16 -20 TJ = 125ºC 25ºC - 40ºC -15 125ºC 12 8 -10 4 -5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -7.0 -4 -8 -12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -20 -24 -28 -32 -36 45 50 Fig. 10. Gate Charge -70 -10 -60 -50 -9 VDS = - 33V -8 I D = -14A I G = -1mA -7 VGS - Volts IS - Amperes -16 ID - Amperes -40 -30 TJ = 125ºC -5 -4 -3 TJ = 25ºC -20 -6 -2 -10 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 -1.4 5 10 VSD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 100 10,000 f = 1 MHz RDS(on) Limit 25µs 100µs ID - Amperes Capacitance - PicoFarads 15 Ciss 1,000 -10 1ms Coss TJ = 150ºC TC = 25ºC Single Pulse Crss 10ms 100ms -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTA28P065T IXTP28P065T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 33 32 RG = 10Ω, VGS = -10V VDS = - 33V 30 TJ = 25ºC 29 t r - Nanoseconds t r - Nanoseconds 31 27 I D = - 28A 25 23 I D 28 RG = 10Ω, VGS = -10V VDS = - 33V 26 24 = -14A 22 21 19 TJ = 125ºC 20 25 35 45 55 65 75 85 95 105 115 125 -14 -16 -18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 38 td(on) - - - - t r - Nanoseconds I D = - 28A, -14A 26 40 22 20 26 18 0 16 18 20 22 24 26 28 30 32 td(off) - - - - 25 38 24 34 I D = - 28A, -14A 23 30 22 26 21 22 25 34 35 45 55 tf td(off) - - - - RG = 10Ω, VGS = -10V t f - Nanoseconds 105 115 18 125 24 TJ = 25ºC TJ = 125ºC 32 28 20 24 18 -22 -24 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -26 20 -28 tf 65 td(off) - - - - 60 TJ = 125ºC, VGS = -10V 60 55 VDS = - 33V 55 50 50 45 45 40 40 I D = -14A 35 I 30 D 35 = - 28A 30 25 25 20 20 15 15 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 36 t d(off) - Nanoseconds 26 -20 95 70 65 40 VDS = - 33V -18 85 70 44 -16 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 30 -14 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22 42 VDS = - 33V RG - Ohms 28 46 20 14 14 tf t d(off) - Nanoseconds 30 12 -28 RG = 10Ω, VGS = -10V t d(on) - Nanoseconds VDS = - 33V 80 10 -26 50 27 34 TJ = 125ºC, VGS = -10V 60 -24 28 t f - Nanoseconds tr -22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 100 -20 ID - Amperes IXTA28P065T IXTP28P065T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_28P065T(A1)11-05-10-A