ACE ACE2390M N-channel 150-v mosfet Datasheet

ACE2390M
N-Channel 150-V MOSFET
Description
ACE2390M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Absolute Maximum Ratings
Symbol
Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
±20
Parameter
TA =25°C
Continuous Drain Currenta
Pulsed Drain Current b
Continuous Source Current (Diode Conduction)
a
TA =25°C
Power Dissipationa
0.9
IDM
5
IS
1.6
Operating Junction and Storage Temperature Range
TJ, Tstg
A
A
1.3
PD
TA =70°C
V
1.1
ID
TA =70°C
Unit
W
0.8
-55 to 150
°C
THERMAL RESISTANCE RATINGS
Symbol Maximum Unit
Parameter
Maximum Junction-to-Ambient a
t<=10sec
Steady State
RθJA
100
166
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE2390M
N-Channel 150-V MOSFET
Packaging Type
Ordering information
ACE2390M BM + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.1
2
ACE2390M
N-Channel 150-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
VGS(th)
VDS = VGS, ID = 250 uA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
±100
VDS = 120 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0 V, TJ = 55°C
25
Unit
Static
Gate-Source Threshold Voltage
ID(on)
On-State Drain Current
Drain-Source On-Resistance
VDS = 5 V, VGS = 10 V
rDS(on)
V
nA
uA
5
A
VGS = 10 V, ID = 1.1 A
0.7
VGS = 4.5 V, ID = 0.8 A
1.2
mΩ
Forward Transconductance
gfs
VDS = 15 V, ID = 1.1 A
5
S
Diode Forward Voltage
VSD
IS = 0.8 A, VGS = 0 V
0.75
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.5
Turn-On Delay Time
td(on)
4.4
Rise Time
Turn-Off Delay Time
3.5
VDS = 75 V, VGS = 4.5 V, ID = 1.1 A
1.3
tr
VDD = 75 V, RL = 75 Ω , ID = 1.1 A,
4.9
td(off)
VGEN = 10 V, RGEN = 6 Ω
18.4
nS
tf
4.9
Input Capacitance
Ciss
356
Output Capacitance
Coss
ReverseTransfer Capacitance
Crss
Fall Time
VDS = 15 V, VGS = 0 V, f =1 MHz
nC
38
pF
17
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1
3
ACE2390M
N-Channel 150-V MOSFET
Typical Performance Characteristics (N-Channel)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
4
ACE2390M
N-Channel 150-V MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS Drain to Source Voltage (V)
9. Safe Operating Area
TJ –Junction Temperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
5
ACE2390M
N-Channel 150-V MOSFET
Packing Information
STO-23-3
A
MILLIMETERS
MAX
MIN
NOM
1.10
0.935
0.95
A1
0.01
A2
0.85
0.90
0.925
b
0.40
0.50
C
0.30
0.10
D
2.70
E
2.60
E1
1.40
0.15
2.90
2.80
1.60
0.25
3.10
3.00
1.80
SYMBOLS
0.10
e
0.95 BSC
e1
1.90 BSC
L
0.30
0.40
L1
0.60REF
L2
0.25BSC
R
0.10
Θ
0°
Θ1
4°
0.60
8°
7°NOM
VER 1.1
6
ACE2390M
N-Channel 150-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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