DMP2200UFCL DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features BVDSS -20V RDS(ON) max ID max 200mΩ @VGS = -4.5V -1.7A 290mΩ @VGS = -2.5V -1.3A 390mΩ @VGS = -1.8V -1.1A 650mΩ @VGS = -1.5V -0.5A Description This device provides a high performance, low RDS(ON) P-Channel PCB Footprint of 2.56mm2 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate Mechanical Data MOSFET in the thermally and spatially efficient U-DFN1616-6 (Type F) package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use in the following applications. Case: U-DFN1616-6 (Type F) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.04 grams (Approximate) Applications Typical Off Board Profile of 0.5mm - Ideally Suited for Thin Applications Low RDS(ON) – Minimizes Conduction Losses Battery Disconnect Switch Load Switch for Power Management Functions D1 D2 Pin1 Gate Protection Diode ESD PROTECTED D1 G2 G1 Bottom View Gate Protection Diode S1 D2 S2 Pin Configuration Bottom View Device Symbol Ordering Information (Note 4) Part Number DMP2200UFCL-7 Notes: Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information P20 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) P20 YM Date Code Key Year Code 2017 E Month Code Jan 1 2018 F Feb 2 DMP2200UFCL Document number: DS36619 Rev. 4 - 2 2019 G Mar 3 2020 H Apr 4 May 5 2021 I Jun 6 1 of 7 www.diodes.com 2022 J Jul 7 Aug 8 2023 K Sep 9 2024 L Oct O 2025 M Nov N Dec D June 2017 © Diodes Incorporated DMP2200UFCL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS ±8 V ID -1.7 -1.2 A IDM -8 A Symbol Unit W W RJA Value 0.66 1.58 193 80 TJ, TSTG -55 to +150 Continuous Drain Current (Note 6) @TA = +25°C @TA = +85°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) (Note 6) (Note 5) (Note 6) PD Operating and Storage Temperature Range °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20V, VGS = 0V Gate-Body Leakage IGSS ±10 µA VGS = ±8V, VDS = 0V VGS(TH) -0.4 -1.2 V VDS = VGS, ID = -250µA 153 220 260 200 290 390 650 ON CHARACTERISTICS (Note 7) Gate Threshold Voltage RDS(ON) VSD -1.2 V Input Capacitance Ciss — 184 — pF Output Capacitance Coss — 25.8 — pF Reverse Transfer Capacitance Crss — 18.6 — pF Total Gate Charge Qg — 2.2 — nC Gate-Source Charge Qgs — 0.4 — nC Gate-Drain Charge Qgd — 0.5 — nC Turn-On Delay Time tD(ON) — 9.8 — ns Turn-Off Delay Time tD(OFF) — 23 — ns tR — 87 — ns tF 41 Static Drain-Source On-Resistance Diode Forward Voltage (Note 7) Ω VGS = -4.5V, ID = -2.0A VGS = -2.5V, ID = -1.2A VGS = -1.8V, ID = -0.24A VGS = -1.5V, ID = -0.18A VGS = 0V, IS = -0.6A DYNAMIC CHARACTERISTICS (Note 8) VDS = -10V, VGS = 0V f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -1.7A SWITCHING CHARACTERISTICS (Note 8) Turn-On Rise Time tRR — — 21.5 — — ns Bodyy Diode Reverse Recovery Time Body Diode Reverse Recovery Charge QRR — 4.2 — nC Turn-Off Fall Time Notes: ns VDD = -10V, ID = -1.5A, VGS = -4.5V, RGEN = 1Ω IF = -2A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2200UFCL Document number: DS36619 Rev. 4 - 2 2 of 7 www.diodes.com June 2017 © Diodes Incorporated DMP2200UFCL 10 10 VGS = -8.0V T A = 25C VGS = -4.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V 6 VGS = -2.5V 4 VGS = -2.0V 2 TA = 150C 8 VGS = -4.5V 8 TA = -55 C VDS = -5.0V TA = 85C TA = 125C 6 4 2 VGS = -1.5V VGS = -1.2V 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = -1.8V 0.4 VGS = -2.5V VGS = -4.5V 0.2 0.1 0 0 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2 1.8 1.6 ID = -2.0A 1.4 1.2 1 0.8 0.6 ID = -1.2A 0.4 0.2 ID = -0.24A 0 0 1 2 3 4 5 6 7 -VGS, GATE-SOURCE CURRENT (V) Figure 4 Typical Transfer Characteristics 8 2 VGS = -4.5V 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.5 0.3 0 3 0.4 TA = 150C TA = 125C 0.3 TA = 85 C TA = 25 C 0.2 TA = -55C 0.1 VGS = -4.5V ID = -3A 1.6 1.4 1.2 VGS = -2.5V ID = -1A 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP2200UFCL Document number: DS36619 Rev. 4 - 2 10 3 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature June 2017 © Diodes Incorporated DMP2200UFCL 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.5 ) V ( E G A T L O V D L O H S E R H T E T A G , )H 0.4 VGS = -2.5V ID = -1A 0.3 0.2 VGS = -4.5V ID = -3A 0.1 0.8 -ID =1mA 0.6 -ID = 250µA 0.4 0.2 T (S G V 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 10 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 8 TA= 150C 6 TA= 125C TA= 85C 4 TA= 25C 2 TA= -55C 0 100 Coss Crss 10 1 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 8 2 10 6 )A ( T 1 N E R R U C N I A R D 0.1 ,D -I VDS = -10V ID = -1.7A 4 2 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP2200UFCL Document number: DS36619 Rev. 4 - 2 4 4 of 7 www.diodes.com 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 RDS(ON) Limited -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) Ciss DC PW = 10s PW = 1s P W = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area June 2017 © Diodes Incorporated DMP2200UFCL 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 r(t)* *RR RR (t)(t)==r(t) JA JA θJA θJA 190癈 /W RR == 190℃/W θJA JA Duty DutyCycle, Cycle,DD==t1/t2 t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) Figure Figure 13 13 Transient TransientThermal Thermal Resistance Resistance DMP2200UFCL Document number: DS36619 Rev. 4 - 2 5 of 7 www.diodes.com June 2017 © Diodes Incorporated DMP2200UFCL Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN1616-6 (Type F) A1 A3 A Seating Plane D D1 D2(2X) Pin #1 ID R E 0. E2(2x) 10 0 K e L Z(4x) U-DFN1616-6 Type F Dim Min Max Typ A 0.45 0.55 0.50 A1 0 0.05 0.02 A3 — — 0.127 b 0.20 0.30 0.25 D 1.55 1.65 1.60 D1 1.14 1.34 1.24 D2 0.38 0.58 0.48 E 1.55 1.65 1.60 E2 0.54 0.74 0.64 e — — 0.50 K — — 0.23 L 0.15 0.35 0.25 Z — — 0.175 All Dimensions in mm b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN1616-6 (Type F) X2 G1 Dimensions C G G1 X X1 X2 Y Y1 Y X1 G Y1 Y2 Value (in mm) 0.500 0.150 0.180 0.320 0.580 1.320 0.450 0.700 1.900 Y C X DMP2200UFCL Document number: DS36619 Rev. 4 - 2 6 of 7 www.diodes.com June 2017 © Diodes Incorporated DMP2200UFCL IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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