CYSTEKEC MTB5D0P03J3 P-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03J3
BVDSS
ID @VGS=-10V
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-88A
3.7mΩ(typ)
5.1mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & halogen-free package
Equivalent Circuit
Outline
MTB5D0P03J3
TO-252(DPAK)
G
G:Gate D:Drain
S:Source
D S
Ordering Information
Device
MTB5D0P03J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=-10V
(Note 1)
Symbol
Limits
Unit
VDS
VGS
-30
±20
V
ID
Continuous Drain Current @ TJ=175°C, TC=100°C, VGS=-10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=-26A, RG=25Ω
TC=25°C
TC=100°C
Total Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 2)
IDSM
(Note 2)
IDM
IAS
EAS
(Note 3)
(Note 3)
(Note 2)
(Note 1)
PD
(Note 1)
(Note 2)
PDSM
(Note 2)
Tj, Tstg
-88
-62
-15
-12
-352
-26
169
94
47
2.5
1.6
-55~+175
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state (Note 2)
Symbol
RθJC
RθJA
Typical
1.4
15
40
Maximum
1.6
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 56 A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB5D0P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 3/9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
Min.
Typ.
Max.
-30
-1
-
3.7
5.1
60
-2.5
±100
-1
-25
5.5
8.5
-
GFS *1
Dynamic
Qg *1, 2
121
181
Qgs *1, 2
18.6
Qgd *1, 2
24.5
td(ON) *1, 2
19.4
29
tr
21.6
32
*1, 2
td(OFF) *1, 2
133
200
tf *1, 2
49.2
74
Ciss
7267
Coss
739
Crss
677
Rg
3.8
Source-Drain Diode Ratings and Characteristics
IS *1
-88
ISM *1
-352
VSD *1
-0.81
-1.2
trr
26
40
Qrr
17
-
Unit
Test Conditions
S
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS =-30V, VGS =0V
VDS =-30V, VGS =0V, TJ=125°C
VGS =-10V, ID=-25A
VGS =-4.5V, ID=-10A
VDS =-5V, ID=-25A
nC
ID=-25A, VDS=-24V, VGS=-10V
ns
VDS=-15V, ID=-25A, VGS=-10V,
RG=2.7Ω
pF
VGS=0V, VDS=-25V, f=1MHz
Ω
VDS=0V, f=1MHz
V
nA
μA
mΩ
A
V
ns
nC
IS=-25A, VGS=0V
IF=-25A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB5D0P03J3
CYStek Product Specification
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
200
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4.5V,4V
-I D, Drain Current(A)
160
-VGS=3.5V
120
-VGS=3V
80
-VGS=2.5V
40
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=2V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
In descending order
VGS=-2.5V
-3V
-4.5V
-10V
90
80
70
60
-VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
50
40
30
20
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.2
0
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
5
10
15
20
25
30
-IDR , Reverse Drain Current(A)
35
40
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
3
90
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-25A
80
70
60
50
40
30
20
10
2.5
VGS=-10V, ID=-25A
2
1.5
1
0.5
RDS(ON) @Tj=25°C : 3.7mΩ typ
0
0
0
MTB5D0P03J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
100000
Capacitance---(pF)
Ciss
10000
C oss
1000
Crss
f=1MHz
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
100
0
-75 -50 -25
30
10
20
-VDS, Drain-Source Voltage(V)
75 100 125 150 175 200
Gate Charge Characteristics
10
100μ s
RDS(ON)
Limited
100
1ms
10ms
100ms
1s
10
DC
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=1.6°C/W,
single pulse
1
-VGS, Gate-Source Voltage(V)
1000
-I D, Drain Current (A)
25 50
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
8
6
4
VDS=-24V
ID=-25A
2
0
0.1
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
20
40
60
80
100
Qg, Total Gate Charge(nC)
120
140
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Case Temperature
100
GFS , Forward Transfer Admittance(S)
100
-I D, Maximum Drain Current(A)
0
90
80
70
60
50
40
30
20
VGS=-10V, Tj(max)=175°C,
RθJC=1.6°C/W, single pulse
10
0
25
MTB5D0P03J3
50
75
100 125 150
TC , Case Temperature(°C)
175
200
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 6/9
Typical Characteristics (Cont.)
Power Derating Curve
Typical Transfer Characteristics
100
80
VDS=-10V
PD, Power Dissipation(W)
70
-ID, Drain Current(A)
60
50
40
30
20
80
60
40
20
10
0
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0
25
50
75 100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=1.6°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB5D0P03J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB5D0P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB5D0P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 9/9
TO-252 Dimension
Marking:
4
Device
Name
B5D0
P03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB5D0P03J3
CYStek Product Specification
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