ON BAV199L Dual series switching diode Datasheet

BAV199L, SBAV199L
Dual Series Switching
Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
• S Prefix for Automotive and Other Applications Requiring Unique
•
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Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
CASE 318
SOT−23
STYLE 11
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
Vdc
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
IF(AV)
715
mAdc
Repetitive Peak Forward Current
IFRM
450
mAdc
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM
Peak Forward Surge Current
Characteristic
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2), TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
Unit
JY = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
PD
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−65 to +150
°C
RqJA
October, 2016 − Rev. 10
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
MARKING DIAGRAM
JY M G
G
2.0
1.0
0.5
Symbol
3
CATHODE/ANODE
Adc
THERMAL CHARACTERISTICS
Total Device Dissipation
FR− 5 Board (Note 1), TA = 25°C
Derate above 25°C
CATHODE
2
ANODE
1
1
Package
Shipping†
BAV199LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAV199LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAV199LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAV199LT1/D
BAV199L, SBAV199L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
70
−
−
−
5.0
80
−
2.0
−
−
−
−
900
1000
1100
1250
−
3.0
Unit
OFF CHARACTERISTICS
V(BR)
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
IR
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
Vdc
nAdc
pF
mVdc
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAV199L, SBAV199L
TYPICAL CHARACTERISTICS
100
IR, REVERSE CURRENT (nA)
100
150°C
25°C
−55°C
10
1
0.1
TA = 150°C
10
1.0
25°C
0.1
−55°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 4. Leakage Current
1.2
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1,000
TA = 25°C
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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3
70
80
70
80
BAV199L, SBAV199L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAV199LT1/D
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