N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. RoHS Compliant Applications Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Pin 1 S S S G D Power 33 Top D D D D 5 4 G D 6 3 D 7 2 S D 8 1 S S Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C Ratings 25 Units V ±20 V 40 106 (Note 1a) -Pulsed 24 A 200 EAS Single Pulse Avalanche Energy (Note 3) 84 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 2.0 V/ns (Note 1a) 3.0 PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 60 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 5.8 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 °C/W Package Marking and Ordering Information Device Marking 2514S Device FDMC2514SDC ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 Package Dual CoolTM Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM October 2010 FDMC2514SDC Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -5 mV/°C VGS = 10 V, ID = 22.5 A 2.5 3.5 VGS = 4.5 V, ID = 18 A 3.6 4.7 VGS = 10 V, ID = 22.5 A, TJ = 125 °C 3.5 4.5 VDS = 5 V, ID = 22.5 A 122 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 2031 2705 pF 596 795 pF 134 205 pF 1.1 2.4 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 13 V, ID = 22.5 A, VGS = 10 V, RGEN = 6 Ω 11 22 ns 3.6 10 ns 26 41 ns 3 10 ns nC td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 31 44 Qg Total Gate Charge 20 Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 13 V, ID = 22.5 A 14 Qgs 6.5 nC Qgd Gate to Drain “Miller” Charge 3.9 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 VGS = 0 V, IS = 22.5 A (Note 2) 0.79 1.2 VGS = 0 V, IS = 2 A (Note 2) 0.47 0.8 IF = 22.5 A, di/dt = 300 A/μs 2 V 24 39 ns 19 34 nC www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 5.8 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 105 °C/W when mounted on a minimum pad of 2 oz copper a. 42 °C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD ≤ 22.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC. ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 3 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Thermal Characteristics 120 VGS = 4.5 V VGS = 3.5 V ID, DRAIN CURRENT (A) 90 8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 30 VGS = 2.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 7 VGS = 2.5 V 6 5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4.5 V 1 VGS = 10 V 0 0 0 1 2 3 4 0 5 30 12 ID = 22.5 A 1.4 V = 10 V GS rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 0.8 -75 120 ID = 22.5 A 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 8 6 TJ = 125 oC 4 2 TJ = 25 oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 90 VDS = 5 V 60 TJ = 125 oC TJ = 25 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 1.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 0 1.0 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On-Region Characteristics ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 4 1.2 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 22.5 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 16 V VDD = 10 V 6 VDD = 13 V 4 1000 Coss 2 100 f = 1 MHz 0 0 4 8 12 16 20 24 28 32 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 120 30 o RθJC = 2.1 C/W VGS = 10 V TJ = 25 oC 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 100 oC TJ = 125 oC 80 VGS = 4.5 V 40 Limited by Package 1 0.01 0.1 1 10 0 25 100 50 100 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 100 100 us 1ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 105 oC/W 10 s TA = 25 oC DC 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE o RθJA = 105 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 10 125 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss VGS = 0 V 60 0.1 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 105 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 6 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverse recovery characteristic of the FDMC2514SDC. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/μs 10 5 0 -5 0 50 100 150 200 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFET body diode reverse leakage versus drain-source voltage Figure 14. FDMC2514SDC SyncFET body diode reverse recovery characteristic ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 10 7 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics (continued) FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 9 www.fairchildsemi.com FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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