Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description Features The MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications. VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G S PDFN33 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS ±20 V o TC=25 C (Silicon limited) 37.2 TC=25oC (Package limited) Continuous Drain Current (1) o TC=70 C 24 ID TA=25oC 13.8(3) o 11.1(3) TA=70 C Pulsed Drain Current IDM 60 o TC=25 C A 24.5 o TC=70 C Power Dissipation A 24 15.6 PD TA=25oC W 3.4(3) TA=70oC 2.2(3) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 48 TJ, Tstg -55~150 Symbol Rating RθJA 36 RθJC 5.1 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Part Number MDV1525URH Temp. Range o -55~150 C Package Packing Quantity Rohs Status PowerDFN33 Tape & Reel 5000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 11A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - ±0.1 - 8.2 10.1 - 11.9 14.6 VGS = 4.5V, ID = 9A - 11.5 14.0 VDS = 5V, ID = 11A - 27.3 - 8.8 12.6 16.4 4.2 6.0 7.8 - 2.5 - - 1.8 - 568 811 1054 54 77 100 108 154 200 TJ=125oC RDS(ON) gfs - V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15.0V, ID = 11A, VGS = 10V Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) - 6.8 - tr - 11.8 - - 20.0 - - 7.1 - 1.0 1.6 3.0 Rise Time Turn-Off Delay Time td(off) VDS = 15.0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15.0V, ID = 11A, RG = 3.0Ω Fall Time tf Gate Resistance Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 11A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr nC pF ns Ω Drain-Source Body Diode Characteristics IF = 11A, dl/dt = 100A/µs - 0.83 1.1 V - 22.2 33.3 ns - 13.8 20.7 nC Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V 3. T < 10sec. May. 2011. Version1.2 2 MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V Ordering Information MDV1525 – Single N-Channel Trench MOSFET 30V May. 2011. Version1.2 3 MagnaChip Semiconductor Ltd. 15 4.5V 15 Drain-Source On-Resistance [mΩ] ID, Drain Current [A] 3.5V 8.0V VGS = 10V 10 3.0V 5 0 0.0 0.5 1.0 1.5 12 VGS = 4.5V 9 VGS = 10V 6 3 2.0 5 10 VDS, Drain-Source Voltage [V] 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 24 1.8 VGS=10V ID=11.0A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.4 1.2 1.0 ※ Notes : ID = 11.0A 20 16 12 8 TA = 25℃ 4 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 ※ Notes : ※ Notes : VDS = 5V VGS = 0V IDR, Reverse Drain Current [A] ID, Drain Current [A] 1 12 8 TA=25℃ 4 10 TA=25℃ 0 10 10 -1 0 0 1 2 3 4 5 0.3 Fig.5 Transfer Characteristics May. 2011. Version1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 4 MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V 20 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 11A Ciss 900 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 600 300 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 0 3 6 9 12 5 10 15 15 20 25 30 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 50 Operation in This Area is Limited by R DS(on) 2 40 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 1 1s 10 10s DC 0 10 30 20 10 Single Pulse TJ=Max rated TC=25℃ -1 10 0 25 10 -1 10 0 1 50 75 100 125 150 2 10 10 T C, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 Zθ JC, Thermal Response D=0.5 0.2 0 10 0.1 0.05 0.02 -1 10 0.01 single pulse -2 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 2011. Version1.2 5 MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V 1200 10 PowerDFN33 (3.3x3.3mm) Dimensions are in millimeters, unless otherwise specified May. 2011. Version1.2 6 MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V Package Dimension MDV1525 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011. Version1.2 7 MagnaChip Semiconductor Ltd.