DMN2055U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features 20V ID Max RDS(ON) Max TA = +25°C 38mΩ @ VGS = 4.5V 4.8A 45mΩ @ VGS = 2.5V 4.5A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions SOT23 D D G S G S Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN2055U-7 DMN2055U-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information AS5 = Product Type Marking Code YM = Date Code Marking Y = Last Digit of Year (ex: 8 = 2018) M = Month (ex: 9 = September) AS5 Date Code Key Year Code Month Code 2017 E Jan 1 2018 F Feb 2 DMN2055U Document number: DS40487 Rev. 3 - 2 2019 G Mar 3 2020 H Apr 4 May 5 2021 I Jun 6 1 of 7 www.diodes.com 2022 J Jul 7 Aug 8 2023 K Sep 9 2024 L Oct O 2025 M Nov N Dec D March 2018 © Diodes Incorporated DMN2055U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 4.8 3.8 A IDM 25 A Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +85°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit PD 0.8 W Steady State RθJA 162 °C/W PD 1.2 W Steady State RθJA 113 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V VGS(TH) 0.4 — 1.0 V VDS = VGS, ID = 250μA 28 38 Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) — 32 45 VSD — 0.7 1.0 V mΩ VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Ciss — 400 — pF Output Capacitance Coss — 55 — pF Reverse Transfer Capacitance Crss — 37 — pF Gate Resistance RG — 3.7 — Ω Total Gate Charge QG — 4.3 — nC Gate-Source Charge QGS — 0.3 — nC Gate-Drain Charge QGD — 4.8 — nC Turn-On Delay Time tD(ON) — 2.8 — ns Turn-On Rise Time tR — 2.7 — ns Turn-Off Delay Time tD(OFF) — 15.4 — ns tF — ns — — 4.4 6.8 1.2 — tRR QRR — — ns nC Input Capacitance Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6A VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω IF = 1.0A, di/dt = 100A/μs IF = 1.0A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2055U Document number: DS40487 Rev. 3 - 2 2 of 7 www.diodes.com March 2018 © Diodes Incorporated DMN2055U 10 20 VGS = 8V VDS = 5.0V VGS = 2.5V VGS = 3V 15 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 2V VGS = 1.5V 10 VGS = 1.3V 5 6 T J = 150°C T J = 125°C 4 T J = 85°C T J = 25°C T J = -55°C 2 VGS = 1V 00 0.5 1 1.5 2 VGS = 1.1V 2.5 0 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.04 VGS = 2.5V 0.03 VGS = 4.5V 0.02 0.01 0.00 0 2 4 6 8 10 12 14 16 18 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 I D = 3.1A 120 0.06 I D = 3.6A 90 60 30 0 0 2 4 6 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 0.05 VGS = 4.5V 1.8 T J = 150°C T J = 125°C 0.04 T J = 85°C 0.03 T J = 25°C 0.02 TJ = -55°C 0.01 0 0 8 2 VDS = 4.5V R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 2 150 0.05 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 2 4 6 8 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2055U Document number: DS40487 Rev. 3 - 2 10 3 of 7 www.diodes.com I D = 3.1A 1.6 VGS = 2.5V 1.4 I D = 3.1A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2018 © Diodes Incorporated 1 , GATE THRESHOLD VOLTAGE (V) 0.06 GS(TH) VGS(th ), GATE THRESHOLD VOLTAGE (V) VGS = 2.5V 0.05 ID = 3.1A 0.04 VGS = 4.5V I D = 3.1A 0.03 0.02 0.01 0.8 I D = 1mA 0.6 I D = 250µA 0.4 0.2 V RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) DMN2055U 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJT , JUNCTION TEMPERATURE (°C) J, JUNCTION TEMPERATURE (C) Figure 8 Gate vs.Ambient Junction Temperature Figure 8 GateThreshold Threshold Variation Variation vs. Temperature 1000 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10 CT , JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 8 6 T J = 150°C TJ = 125°C 4 TJ = 85°C T J = 25°C T J = -55°C 2 0 0 0.3 0.6 0.9 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Ciss 100 Coss Crss 10 0 1.2 8 5 10 15 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 100 PW = 100µs 10 6 ID, DRAIN CURRENT (A) GS, GATE-SOURCE VOLTAGE (V) VGSVGATE THRESHOLD VOLTAGE (V) RDS(on) Limited VDS = 10V 4 I D = 6A 2 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(m ax) = 150°C TC = 25°C PW = 10ms PW = 1ms VGS = 4.5V Single Pulse DUT on 1 * MRP Board 00 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2055U Document number: DS40487 Rev. 3 - 2 8 4 of 7 www.diodes.com 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2018 © Diodes Incorporated DMN2055U r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMN2055U Document number: DS40487 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 March 2018 © Diodes Incorporated DMN2055U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN2055U Document number: DS40487 Rev. 3 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com March 2018 © Diodes Incorporated DMN2055U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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