Renesas NHD035A Intelligent power device Datasheet

Datasheet
µPD166028T1K
INTELLIGENT POWER DEVICE
R07DS1162EJ0200
Rev.2.00
May 22, 2015
1. Overview
1.1 Description
Family:
µPD166028T1K is part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switches with
charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
•
•
•
•
•
•
•
•
•
•
Built-in charge pump
3.3V compatible logic interface
Low standby current
Short circuit protection
 Shutdown by over current detection
 Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
 Absolute Tch over temperature protection
Built-in diagnostic function
 Proportional load current sensing
 Defined fault signal in case of abnormal load condition
Loss of ground protection
Under voltage lock out
Active clamp operation at inductive load switch off
AEC Qualified
RoHS compliant
1.3 Application
• Light bulb switching from 21W to 27W
• Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
• Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 1 of 40
µPD166028T1K Datasheet
2. Ordering Information
2. Ordering Information
Part No.
UPD166028T1K-E1-AY
UPD166028T1K-E2-AY
Note:
Nick name
NHQ035C
NHQ035C
Lead plating
Pure Matte Sn
Pure Matte Sn
Packing
Tape 1500 p/reel
Tape 1500 p/reel
Package
24-pin Power HSSOP
24-pin Power HSSOP
Part No. and Nick name are tentative and might change at anytime without notice.
MSL: 1, profile acc. J-STD-20C
2.1 Nick name
N H Q 035 C
On-state resistance
S: Single channel
D: Dual channel
Q: Quad channel
A: TO252-7
B: 12-pin Power HSSOP
C: 24-pin Power HSSOP
Nch High-side
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 2 of 40
µPD166028T1K Datasheet
3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Quad Device
Voltage and Current Definition
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 3 of 40
µPD166028T1K Datasheet
3. Specification
3.2 Pin Configuration
3.2.1 24-pin Power HSSOP Pin Configuration
Pin No.
Terminal Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Tab
GNDA
IN1
IS1
IS2
IN2
N.C.
GNDB
IN3
IS3
IS4
IN4
VCC
SENB
OUT4
OUT4
OUT3
OUT3
N.C.
SENA
OUT2
OUT2
OUT1
OUT1
VCC
VCC
24 23 22 21 20 19 18 17 16 15 14 13
Tab
Tab
1
2
3
4 5 6 7
8
9 10 11 12
Pin function
Terminal Name
GNDm
Pin function
Ground connection (m=A to B)
INn
Input signal for channel n (n=1 to 4)
Connected to MCU port through 2k-50K serial
resistor.
ISn
Current sense and Diagnosis output signal
channel n (n=1 to 4)
Sense enable input (m=A to B)
Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SENm
Recommended connection
Connected to GND through a 100 Ω resistor or a
diode for reverse current protection
Refer chapter 6.
Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
OUTn
Protected high-side power output channel n (n=1
to 4)
Connected to load with small 50-100nF capacitor
in parallel.
VCC
Positive power supply for logic supply as well as
output power supply
Non connection
Connected to battery voltage with small 100nF
capacitor in parallel.
Left open
N.C.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 4 of 40
µPD166028T1K Datasheet
3. Specification
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Vcc Voltage
Vcc Voltage at reverse
battery condition
Symbol
VCC
-VCC
Rating
28
-16
Unit
V
V
GND Reverse current at
reverse battery condition
Vcc voltage under Load
Dump condition
Load Current
Total power dissipation
for whole device (DC)
IGND(Rev)
200
mA
Vload dump
42
V
IL
PD
Self limited
2.16
A
W
Voltage at IN pin
VIN
-2 ~ 16
V
-16
IN pin current
Voltage at IS pin
IIN
VIS
10
VCC
mA
V
-16
V
IS Reverse current at
reverse battery condition
IIS(Rev)
-30
mA
Voltage at SEN pin
VSEN
-2 ~ 16
V
-16
SEN pin current
Channel Temperature
Storage Temperature
ESD susceptibility
ISEN
Tch
Tstg
VESD
10
-40 to +150
-55 to +150
2000
mA
°C
°C
V
4000
200
Inductive load switch-off
EAS
35
energy dissipation single
pulse
Inductive load switch-off
EAR
25
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Test Condition
RL=5.4Ω, t<2min,
RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ RGND=100Ω
RL=5.4Ω, t<2min
RI=1Ω, RL=5.4Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ,
RGND=100Ω, td=400ms
Ta=85°C,
Device on 50mm×50mm×1.5mm epoxy PCB FR4
with 6 cm2 of 70 µm copper area
DC
RIN=2kΩ
At reverse battery condition, t<2min,
RIN=2kΩ, RSEN=2kΩ
DC
DC
RIS=1kΩ
At reverse battery condition, t<2min,
RL=5.4Ω, RIS=1kΩ
At reverse battery condition, t<2min,
RL=5.4Ω
DC
RSEN=2kΩ
At reverse battery condition, t<2min
RIN=2kΩ, RSEN=2kΩ
DC
HBM
AEC-Q100-002 std.
R=1.5kΩ, C=100pF
All pin
mJ
IEC61000-4-2 std.
VCC, OUT
R=330Ω, C=150pF,
100nF at VCC and OUT
MM
AEC-Q100-003 std.
R=0Ω, C=200pF
VCC=13.5V, Tch,start<150°C, RL=5.4Ω
mJ
VCC=13.5V, Tch,start=85°C, RL=5.4Ω
V
Page 5 of 40
µPD166028T1K Datasheet
3. Specification
3.4 Thermal Characteristics
Parameter
Thermal characteristics
Symbol
Rth(ch-a)
Rth(ch-c)
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Min
Typ
30
1.0
Max
Unit
°C/W
Test Condition
According to JEDEC
JESD51-2, -5, -7 on
FR4 2s2p board
°C/W
Page 6 of 40
µPD166028T1K Datasheet
3. Specification
3.5 Electrical Characteristics
Operation function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Operating Voltage
Symbol
VCC
Operating current per
channel
IGND
Output Leakage current
per channel
IL(off)
Min
4.5
Typ
2.2
Max
28
Unit
V
4
mA
VIN=4.5V
RL=5.4Ω
VIN=4.5V
0.5
µA
Tch=25°C
3
Standby current
ICC(off)
0.7
Tch=-40~125°C
µA
4
On-state resistance per
channel
Ron
Low level IN pin voltage
High level IN pin voltage
Low level IN pin current
High level IN pin current
Clamping IN pin voltage 1)
Low level SEN pin voltage
High level SEN pin voltage
Low level SEN pin current
High level SEN pin current
Clamping SEN pin voltage1)
Under voltage shutdown
Under voltage restart
Turn on time
Turn on delay time
Turn off time
Turn off delay time
Slew rate on
Slew rate off
Switching drift1)
VIL
VIH
IIL
IIH
VZIN
VSENL
VSENH
ISENL
ISENH
VZSEN
VCC(Uv)
VCC(Cpr)
ton
td(on)
toff
td(off)
dV/dton
-dV/dtoff
ton-toff
Turn on energy loss 1)
Turn off energy loss 1)
Driving capability 1)
Eon
Eoff
Dr(capa)
35
2.5
2
2
5
25
25
6
0.8
2.5
2
2
5
25
25
6
4.5
5.0
200
100
200
150
1.5
1.5
+50
-50
0.3
0.3
300
350
0.6
0.6
Tch=25°C
Tch=-40~85°C
mΩ
80
0.8
Test Condition
V
V
µA
µA
V
V
V
µA
µA
V
V
V
µs
µs
µs
µs
V/µs
V/µs
µs
mJ
mJ
mΩ
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
VOUT=0V,
VGND=0V
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
VOUT=0V,
VGND=0V
Tch=25°C, IL=2.5A
Tch=150°C, IL=2.5A
VIN=0.8V
VIN=2.5V
VSEN=0.8V
VSEN=2.5V
VCC=13.5V, RL=5.4Ω
Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150°C drift from Tch=25°C
ton; Vout=Vcc-1.5V after input signal active
VCC=13.5V,Tch=25°C, RL=5.4Ω
Tch=25°C, VCC=8~16V
Tch=105°C, VCC=8~16V
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 7 of 40
µPD166028T1K Datasheet
3. Specification
Protection function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Over current detection
current
Current limitation under
power limitation toggling
Current limitation under
absolute thermal toggling
Current limitation trigger
threshold during turn-on
Current limitation trigger
threshold during on-state
Absolute thermal
shutdown temperature
Thermal hysteresis for
absolute thermal toggling
Power limitation thermal
shutdown temperature
Power limitation restart
temperature
Output clamp at inductive
load switch off
Output current while GND
disconnection
Output voltage drop at
reverse battery condition
Symbol
IL(SC)
Min
35
Typ
50
Max
Unit
A
Test Condition
VCC=13.5V, Von=5V, Tch=25°C
IL(CL)
20
A
VCC=13.5V
IL(TT)
8
A
VCC=13.5V
Von(CL1)
2.0
V
VCC=13.5V
Von(CL2)
0.8
V
VCC=13.5V
aTth
150
°C
aTth,hys
20
°C
dTth
60
°C
dTth,rest
art
Von,clam
p
IL(GND)
30
°C
30
Vds(rev)
40
V
1
mA
0.9
V
0.7
VCC=13.5V, IL=40mA, Tch=25°C
IIN=0A, ISEN=0A, IGND=0A, IIS=0A
Tch=25°C
Tch=150°C
VCC=-13.5V,
RL=5.4Ω
Remark) All voltages refer to ground pin of the device
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 8 of 40
µPD166028T1K Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Current sense ratio
Symbol
KILIS
Current sense drift depend
on temperature
dKILIS
Sense current offset
current
Min
2720
2380
-15
Typ
3400
3400
Max
4080
4420
15
Unit
Iis,offset
2
µA
VCC=13.5V, Tch,start=25°C,
RL=5.4Ω
IL<10mA
Sense current leakage
current
Iis,dis
1
µA
VIN=0V, VSEN=0V
Sense current under fault
condition
Iis,fault
3
3.5
3.5
9.5
9
5.5
mA
VCC=13.5V, RIS=0.67kΩ
VCC=13.5V, RIS=1kΩ
VCC=13.5V, RIS=2kΩ
Minimum output current for
current sense output
IL(CSE)
10
50
mA
IIS>5µA
Open load detection
threshold at off-state
VOUT(OL)
2.0
5.0
V
VIN=0V, Tch=-40~105°C
OUT terminal current at
Open load condition
IOUT(OL)
-1.0
µA
VIN =0V
Open load detection delay
after input negative slope
tdop
µs
VIN=4.5V to 0V, VOUT>VOUT(OL)
300
Test Condition
IL=2.5A
IL=0.5A
%
Remark) All voltages refer to ground pin of the device
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 9 of 40
µPD166028T1K Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Sense current settling time
after input signal positive
slope
Symbol
tsis(on)
Min
Typ
Max
250
Unit
µs
Test Condition
VCC=13.5V, VIN=0V to 4.5V,
IL/IIS=KILIS, RL=5.4Ω
Sense current settling time
after input signal negative
slope 1)
tsis(off)
10
µs
VIN=4.5V to 0V
Sense current settling time
after sense enable during
on-state 1)
tssen(on)
20
µs
VSEN=0V to 4.5V, RL=5.4Ω
Sense current settling time
after sense disable during
on-state 1)
tssen(off)
20
µs
VSEN=4.5V to 0V, RL=5.4Ω
Sense current settling time
during on-state 1)
tsis(LC)
20
µs
RL=5.4Ω to 2.7Ω
Fault signal delay after
over current detection 1)
tdsc(fault)
10
µs
VIN=0V to 4.5V, IL=IL(SC)
Fault signal delay after
power limitation valid 1)
tdpl(fault)
10
µs
Von>Von(CL1)
Fault signal delay after
power limitation invalid 1)
tdpl(off)
30
µs
Von<Von(CL1)
Fault signal delay after
absolute thermal shutdown
tdot(fault)
10
µs
IIS→IIS,fault
Fault signal delay after
open load detection at offstate 1)
tdop(fault)
10
µs
VIN=0V, VOUT>VOUT(OL)
Fault signal delay after
input negative slope 1)
tdoff(fault)
10
µs
VIN=4.5V to 0V
1)
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 10 of 40
µPD166028T1K Datasheet
3. Specification
3.6 Feature Description
3.6.1 Driving Circuit
The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open
or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is
pulled down with constant current source.
VIN
IN
0
RESD
VOUT
IIN
Vcc
Internal ground
OFF
ON
OFF
ON
0
t
Switching a resistive load
Switching lamps
VIN
VIN
0
0
IL
IL
0
0
VOUT
GND
VOUT
Vcc
0
0
IIS
IIS
0
R07DS1162EJ0200 Rev.2.00
May 22, 2015
t
0
t
Page 11 of 40
µPD166028T1K Datasheet
3. Specification
Switching an inductive load
VIN
0
IL
0
VOUT
Vcc
0
Von,clamp
IIS
0
t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
VCC
RESD
IN
SEN
ZDAZ ZDAZ
RESD
SW1
logic
ZDESD
OUT
Internal ground
GND
R07DS1162EJ0200 Rev.2.00
May 22, 2015
IS
Page 12 of 40
µPD166028T1K Datasheet
3. Specification
3.6.2 Device behavior at over voltage condition
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.
VCC
IN
RIN
SEN
RESD
RESD
N-ch
MOSFET
logic
RSEN
ZDAZ
ZDESD
ZDAZ
ZDESD
uC
OUT
IPD
Internal ground
GND
IS
RGND
RIS
RL
3.6.3 Device behavior at low voltage condition
If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.
VIN
0
IL
0
VCC
VOUT
VCC(Uv)
VCC(CPr)
0
t
3.6.4 Loss of Ground protection
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 13 of 40
µPD166028T1K Datasheet
3. Specification
3.6.5 Short circuit protection
Turn-on in an over load condition including short circuit condition
The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically when device cooling to dTch,restart. The output current is limited by output power MOSFET
saturation current. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
In case of device shutdown by (c) detection but also (b) condition, the output current is limited by IL(CL).
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
Over load condition including short circuit condition during on-state
The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth
Power limitation control
Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.
Absolute thermal toggling
Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.
delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.
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May 22, 2015
Page 14 of 40
µPD166028T1K Datasheet
3. Specification
3.6.6 Device behavior at reverse current conduction during on-state
During on-state(VIN>VIH) the device might shut down automatically when Vout>Vcc+0.3V is detected.
And the sense pin outputs Iis,fault if the device shuts down.
If restart is required, please reset via input pin when detect the Iis.fault.
VCC
VCC
IN
>VIH
OUT
SEN
VIN
Irev
IS
GND
>VSENH
RIS
VIS
Vout
VSEN
VIN
0
VSEN
0
Vcc
Vout
0
Iout
0
Irev
VIS
0
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May 22, 2015
Iis.fault
t
Page 15 of 40
µPD166028T1K Datasheet
3. Specification
State transition diagram
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Turn-on
C
Turn-off
B
Return
IL(lim) initial value is power MOSFET saturation current.
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Page 16 of 40
µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(a) IL > IL(SC)
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before over current detection
C
Turn-off
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Turn-on
After over current detection
Exit from off-latch
B
Return
Page 17 of 40
µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before dTcht detection
C
Turn-off
Turn-on
During shutdowning by dTth detection
During current limit by saturation current
B
Return
Exit from current limitation control
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µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before aTcht detection
C
Turn-off
Turn-on
During shutdowning by aTth detection
During current limitation control
B
Return
Exit from power limitation control
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Page 19 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before Von(CL) detection after turn on
C
Turn-off
Turn-on
After Von(CL) detection
During shutdowning by dTth detection
B
Return
During current limitation control
Exit from power limitation control
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µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(a) Von > Von(CL) with dead condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before Von(CL) detection after turn on
C
Turn-off
Turn-on
After Von(CL) detection
After over current detection
B
Return
Exit from power limitation control
R07DS1162EJ0200 Rev.2.00
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Page 21 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Turn-on
C
Turn-off
Before dTth detection after turn on
During shutdowning by dTth detection
B
Return
Exit from thermal protection control
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Page 22 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before aTth detection after turn on
C
Turn-off
R07DS1162EJ0200 Rev.2.00
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Turn-on
During shutdowning by aTth detection
Exit from thermal protection control
B
Return
Page 23 of 40
µPD166028T1K Datasheet
3. Specification
3.6.7 Device behavior at small load current conduction
The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to
increase to be Von=Von(NL)=30mV(typ).
Von
Von(NL)
IL(NL)
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IL
Page 24 of 40
µPD166028T1K Datasheet
3. Specification
3.6.8 Diagnostic signal
Truth table
SEN
Normal Operation
H
Shutdown by over
current detection
Input
H
L
H
L
H
Power limitation
L
H
Thermal toggling
Short circuit to VCC
Open Load
X 8)
L
L
H
L
H
L
X 8)
Output
VCC
L 1)
L 1)
L 1)
VOUT 6)
L 1)
L 1)
VOUT 6)
L 1)
L 1)
VCC
VOUT 7)
VCC
VOUT 7)
X 8)
Diagnostic output 2)
IIS = IL/KILIS
< 1µA (Iis,dis)
Iis,fault 3)
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 4) in case of Von>Von(CL1)
Iis,fault 4)
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 5) in case of Von>Von(CL1)
Iis, fault 5)
< 1µA (Iis,dis)
< 2µA (Iis,offset)
Iis,fault in case of VOUT>VOUT(OL)
< 2µA (Iis,offset)
Iis,fault in case of VOUT>VOUT(OL)
< 1µA (Iis,dis)
1) In case of OUT terminal is connected to GND via load.
2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
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Page 25 of 40
µPD166028T1K Datasheet
3. Specification
Current sense output
The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA,
IIS,offset max, if output current is below IL(CSE) min.
IIS
IIS
KILIS=IL/IIS
5µA
2µA
IL
IIS,offset
IL
IL(CSE)
Sense current under fault condition
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1kΩ condition.
IIS,fault
1kΩ load line
VCC
9mA
VCC-VIS
VCC
IS
3.5mA
GND
VIS
VCC-VIS
VIS
RIS
VCC-VIS
VCC
R07DS1162EJ0200 Rev.2.00
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Page 26 of 40
µPD166028T1K Datasheet
3. Specification
Sense current settling time
VIN
VSEN
VOUT
tsis(on)
tssen(off) tssen(on)
tsis(LC)
tsis(LC)
tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
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µPD166028T1K Datasheet
3. Specification
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear
Short circuit disappear
Power limitation
VOUT
tdpl(fault)
IIS
tdpl(off)
Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear
Power
limitation
VOUT
Short circuit disappear
Thermal toggling
tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
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Page 28 of 40
µPD166028T1K Datasheet
3. Specification
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection
Open load detection
VOUT
Iis,fault
tdop
IIS
Iis,offset
R07DS1162EJ0200 Rev.2.00
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tdop(fault)
Iis,dis
Page 29 of 40
µPD166028T1K Datasheet
3. Specification
3.6.9 Nominal load
Product
NHQ035C
Nominal load
5.4Ω
3.6.10 Driving Capability
Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.
IL [A]
VIN
IL(SC) specified point
NHQ035C: 35A
t
45
IL(SC) characteristics
5
13.5
Driving Capability:
IL
Von [V]
t
30ms
NHQ035C:300mΩ
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Page 30 of 40
µPD166028T1K Datasheet
3. Specification
3.6.11 Measurement condition
Switching waveform of OUT terminal
VIN
ton
toff
td(on)
td(off)
90%
70%
VOUT
dV/dton
30%
10%
R07DS1162EJ0200 Rev.2.00
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90%
70%
-dV/dtoff
30%
10%
Page 31 of 40
µPD166028T1K Datasheet
3. Specification
3.7 Package drawing
24-pin Power HSSOP
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µPD166028T1K Datasheet
3. Specification
3.8 Taping information
3.9 Marking information
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µPD166028T1K Datasheet
4. Typical characteristics
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
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µPD166028T1K Datasheet
4. Typical characteristics
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µPD166028T1K Datasheet
4. Typical characteristics
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µPD166028T1K Datasheet
4. Typical characteristics
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µPD166028T1K Datasheet
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
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µPD166028T1K Datasheet
5. Thermal characteristics
5. Thermal characteristics
R07DS1162EJ0200 Rev.2.00
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µPD166028T1K Datasheet
6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100kΩ
GND Network recommendation
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
Vbat
Vbat
VCC
VCC
GND
GND
RGND
External diode is recommended in order to
prevent reverse current toward control logic
part at reverse battery condition.
External diode and resistor are recommended
in order to prevent reverse current toward
control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100Ω is recommended as
RGND.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 1kΩ additional resistor in parallel with the diode is recommended if Vf vaule of
the diode is high.
R07DS1162EJ0200 Rev.2.00
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Page 40 of 40
Revision History
Rev.
1.00
2.00
Date
Mar 27, 2014
May 22, 2015
µPD166028T1K Datasheet
Page
1-38
15
24
Description
Summary
1st issue
"Device behavior at reverse current conduction during on-state" is added.
"Device behavior at small load current conduction" is added.
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