Microchip MCP87018T-U/MF High-speed n-channel power mosfet Datasheet

MCP87018
High-Speed N-Channel Power MOSFET
Features:
Description:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
The MCP87018 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87018 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87018
allows high-efficiency power conversion with reduced
switching and conduction losses.
Applications:
• Point-of-Load DC-DC Converters
• High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
S 1
8 D
S 2
7 D
S 3
6 D
G 4
5 D
Product Summary Table: Unless otherwise indicated, TA = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Drain-to-Source Breakdown Voltage
BVDSS
25
—
—
V
VGS = 0V, ID = 250 µA
Gate-to-Source Threshold Voltage
VGS(TH)
1
1.3
1.6
V
VDS = VGS, ID = 250 µA
Drain-to-Source On Resistance
RDS(ON)
Operating Characteristics
—
1.8
2.2
mΩ
VGS = 4.5V, ID = 25A
—
1.5
1.9
mΩ
VGS = 10V, ID = 25A
Total Gate Charge
QG
—
32.5
37
nC
VDS = 12.5V, ID = 25A, VGS = 4.5V
Gate-to-Drain Charge
QGD
—
13
—
nC
VDS = 12.5V, ID = 25A
RG
—
1.5
—
Ω
—
Thermal Resistance Junction-to-X
RθJX
—
—
55
°C/W
Note 1
Thermal Resistance Junction-to-Case
RθJC
—
—
1.0
°C/W
Note 2
Series Gate Resistance
Thermal Characteristics
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz.
copper. This characteristic is dependent on user’s board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2013 Microchip Technology Inc.
DS20002329B-page 1
MCP87018
1.0
† Notice:
Stresses above those listed under
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDS .......................................................................+25V
VGS ........................................................... +10.0V / -8V
ID, Continuous ................................. 100A, TC = +25°C
PD .....................................................2.2W, TA = +25°C
TJ, TSTG..............................................-55°C to +150°C
EAS Avalanche Energy .................................. 612.5 mJ
ID = 35A, L = 1 mH, RG = 25Ω
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
BVDSS
25
—
—
V
VGS = 0V, ID = 250 µA
IDSS
—
—
1
µA
VGS = 0V, VDS = 20V
Gate-to-Source Leakage Current
IGSS
—
—
100
nA
VDS = 0V, VGS = 10V/-8V
Gate-to-Source Threshold Voltage
VGS(TH)
1
1.3
1.6
V
VDS = VGS, ID = 250 µA
RDS(ON)
—
2.2
—
—
1.8
2.2
m
Static Characteristics
Drain-to-Source
Breakdown Voltage
Drain-to-Source Leakage Current
Drain-to-Source On Resistance
VGS = 3.3V, ID = 25A
VGS = 4.5V, ID = 25A
—
1.5
1.9
m
gfs
—
162
—
S
VDS = 12.5V, ID = 25A
CISS
—
2925
—
pF
VGS = 0V, VDS = 12.5V, f = 1 MHz
Output Capacitance
COSS
—
1305
—
pF
VGS = 0V, VDS = 12.5V, f = 1 MHz
Reverse Transfer Capacitance
CRSS
—
330
—
pF
VGS = 0V, VDS = 12.5V, f = 1 MHz
Total Gate Charge
QG
—
32.5
37
nC
VDS = 12.5V, ID = 25A,
VGS = 4.5V
Transconductance
VGS = 10V, ID = 25A
Dynamic Characteristics
Input Capacitance
Gate-to-Drain Charge
QGD
—
13
—
nC
VDS = 12.5V, ID = 25A
Gate-to-Source Charge
QGS
—
5.3
—
nC
VDS = 12.5V, ID = 25A
Gate Charge at VGS(TH)
QG(TH)
—
3.8
—
nC
VDS = 12.5V, ID = 25A
Output Charge
QOSS
—
26
—
nC
VDS = 12.5V, VGS = 0
Turn-On Delay Time
td(on)
—
6.53
—
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
tr
—
28.3
—
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
td(off)
—
26.35
—
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
tf
—
28.05
—
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
RG
—
1.5
—

Rise Time
Turn-Off Delay Time
Fall Time
Series Gate Resistance
DS20002329B-page 2
 2013 Microchip Technology Inc.
MCP87018
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Diode Forward Voltage
VFD
—
0.8
1
V
Reverse Recovery Charge
QRR
—
47
—
nC
IS = 25A, di/dt = 300 A/µs
trr
—
28
—
ns
IS = 25A, di/dt = 300 A/µs
EAS
200
—
—
mJ
ID = 20A, L = 1 mH, RG = 25
Diode Characteristics
Reverse Recovery Time
IS = 25A, VGS = 0V
Avalanche Characteristics
Avalanche Energy
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Operating Junction Temperature Range
TJ
-55
—
150
°C
Storage Temperature Range
TA
-55
—
150
°C
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
RθJX
—
—
55
°C/W
Note 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
RθJC
—
—
1.0
°C/W
Note 2
Temperature Ranges
Package Thermal Resistances
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2013 Microchip Technology Inc.
DS20002329B-page 3
MCP87018
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, TA = +25°C.
80
1.8
VGS = 10V
VGS = 4.5V
60
VGS = 3V
50
40
30
VGS = 2
2.5V
5V
20
0
1.2
1
0.8
0.4
0.0
0.2
0.4
VDS – Drain-to-Source Voltage (V)
FIGURE 2-1:
Characteristics.
0.6
Typical Output
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC – Case Temperature (°C)
FIGURE 2-4:
Normalized On-State
Resistance vs. Temperature.
80
VGS – Gatte-to-Source Voltage
(V)
10
VDS = 5V
70
ID – Drain Current (A)
1.4
0.6
10
60
50
40
TC = +25°C
30
TC = +125°C
20
TC = -55°C
10
0
ID = 25A
9
8
VDS = 5V
7
VDS = 12.5V
6
5
4
3
2
1
0
1
1.25
1.5 1.75
2
2.25 2.5 2.75
VGS – Gate-to-Source Voltage (V)
FIGURE 2-2:
Characteristics.
3
Typical Transfer
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
QG – Gate Charge (nC)
FIGURE 2-5:
Gate Charge.
10
Gate-to-Source Voltage vs.
6
ID = 25A
9
f = 1 MHz
VGS = 0V
5
8
C – Cap
pacitance (nF)
RDS(ON) – O
On-State Resistance
(mŸ)
ID = 25A
VGS = 4.5V
1.6
Norm
malized On-State
Resistance
R
ID – D
Drain Current (A)
70
7
6
5
4
3
TC = +125°C
2
1
4
CISS
3
2
COSS
1
TC = +25°C
CRSS
0
0
2
4
6
8
VGS – Gate-to-Source Voltage (V)
10
FIGURE 2-3:
On-State Resistance vs.
Gate-to-Source Voltage.
DS20002329B-page 4
0
0
5
10
15
VDS – Drain-to-Source Voltage (V)
FIGURE 2-6:
Source Voltage.
20
Capacitance vs. Drain-to-
 2013 Microchip Technology Inc.
MCP87018
Note: Unless otherwise indicated, TA = +25°C.
120
1.7
ID = 250 µA
ID – D
Drain Current (A)
VGS(TH) – Gate-to-Source
Thresh
hold Voltage (V)
1.5
1.3
1.1
0.9
VGS = 10V
100
80
VGS = 4.5V
60
40
20
0
0.7
0
-75 -50 -25 0 25 50 75 100 125 150 175
TC – Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
25
FIGURE 2-10:
Temperature.
50
75
100
125
TC – Case Temperature (˚C)
150
Maximum Drain Current vs.
ZșJA – No
ormalized Thermal
Impedance
ISD – Sourc
ce-to-Drain Current
(A)
100
10
1
TC = +125°C
0.1
TC = +25°C
0.01
0.001
100
0.1
10
t1 – Pulse Duration (s)
1000
Transient Thermal
100
Operation in this range is
limited by RDS(ON)
1 ms
10
10 ms
100 ms
1
1s
0.1
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0
0.02
02
DC = 0.01
Single Pulse
0.01
FIGURE 2-11:
Impedance.
DC
RșJA = 55 °C/W
Single Pulse
0.01
0.01
FIGURE 2-9:
Area.
0.1
1
10
VDS – Drain-to-Source Voltage (V)
100
Maximum Safe Operating
 2013 Microchip Technology Inc.
IAS – Avalanche Current (A)
ID – D
Drain Current (A)
1000
0.1
0.001
0.001
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD – Source-to-Drain Voltage (V)
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
1
10
1
0.01
TC = +150°C
TC = +25°C
0.1
1
10
tAV – Avalanche Time (ms)
100
FIGURE 2-12:
Single-Pulse Unclamped
Inductive Switching.
DS20002329B-page 5
MCP87018
VBR(DSS) – Breakdown Voltage
(V)
30
ID = 250 µA
29
28
27
26
25
-60 -40 -20
0 20 40 60 80 100 120 140 160
TC – Case Temperature(°C)
FIGURE 2-13:
Drain-to-Source Breakdown
Voltage vs. Temperature.
DS20002329B-page 6
 2013 Microchip Technology Inc.
MCP87018
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP87018
5x6 PDFN
Symbol
Description
1, 2, 3
S
Source pin
4
G
Gate pin
5, 6, 7, 8
D
Drain pin, including exposed thermal pad
 2013 Microchip Technology Inc.
DS20002329B-page 7
MCP87018
4.0
PACKAGING INFORMATION
4.1
Package Marking Information*
8-Lead PDFN (5x6x1.0 mm)
NNN
PIN 1
Example
87018
U/MF e
^^3
1324
256
PIN 1
*RoHS compliant using EU-RoHS exemption: 7(a) – Lead in high-melting-temperature-type solders
(i.e., lead-based alloys containing 85% by weight or more lead) can be found on the outer
packaging for this package.
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20002329B-page 8
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2013 Microchip Technology Inc.
MCP87018
 2013 Microchip Technology Inc.
DS20002329B-page 9
MCP87018
DS20002329B-page 10
 2013 Microchip Technology Inc.
MCP87018
 2013 Microchip Technology Inc.
DS20002329B-page 11
MCP87018
NOTES:
DS20002329B-page 12
 2013 Microchip Technology Inc.
MCP87018
APPENDIX A:
REVISION HISTORY
Revision B (July 2013)
The following is the list of modifications:
1.
2.
3.
Updated the thermal resistance junction-to-X
and junction-to-case values in Product
Summary
Table
and
Temperature
Characteristics.
Added Figures 2-9 and 2-11 in Section 2.0,
Typical Performance Curves.
Updated Figure 2-10 in Section 2.0, Typical Performance Curves.
Revision A (January 2013)
• Original Release of this Document.
 2013 Microchip Technology Inc.
DS20002329B-page 13
MCP87018
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
/XX
Device
Temperature
Range
Package
Device:
MCP87018T:
Temperature Range: U
Package:
Examples:
a)
MCP87018T-U/MF:
Tape and Reel,
Ultra High Temperature,
8LD PDFN package
N-Channel Power MOSFET (Tape and Reel)
= -55°C to +150°C (Ultra High)
MF = 8-Lead High Power Dual Flatpack, No Lead Package
(5x6x1.0 mm Body) (PDFN), 8-lead
 2013 Microchip Technology Inc.
DS20002329B-page 14
MCP87018
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
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Information contained in this publication regarding device
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and may be superseded by updates. It is your responsibility to
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Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
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Company are registered trademarks of Microchip Technology
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Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
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All other trademarks mentioned herein are property of their
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© 2013, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
ISBN: 978-1-62077-338-3
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
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are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
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and manufacture of development systems is ISO 9001:2000 certified.
DS20002329B-page 15
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Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS20002329B-page 16
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
 2013 Microchip Technology Inc.
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