Ordering number : EN6445D MCH6602 N-Channel Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 30 V ±10 V 0.35 A PW≤10μs, duty cycle≤1% 1.4 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 W 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-006 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 Marking 0 to 0.02 1 2 TL 3 0.65 0.3 0.85 FB LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6602-TL-E 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 MCPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 6 5 4 1 2 3 82813 TKIM TC-00002986/71112 TKIM/12407 TIIM TC-00000415/70306/ No.6445-1/6 42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509 MCH6602 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=80mA 0.15 V 1 μA ±10 μA 1.3 0.22 V S RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ciss Ω 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time td(on) tr 19 ns 65 ns 155 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 120 ns 1.58 nC 0.26 nC 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=15V VIN PW=10μs D.C.≤1% ID=80mA RL=187.5Ω VIN VOUT D G P.G 50Ω MCH6602 S Ordering Information Device MCH6602-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb-Free No.6445-2/6 MCH6602 ID -- VGS 0.30 0.10 0.08 VGS=1.5V 0.06 0.04 °C Ta= -- 0.20 75 °C 3.0 0.25 Drain Current, ID -- A 0.12 V 2.0 V 3.5V 4.0V 6.0 V Drain Current, ID -- A 0.14 25° C 2. 5V VDS=10V 25 ID -- VDS 0.16 0.15 0.10 0.05 0.02 0 0 0 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 0.9 Drain to Source Voltage, VDS -- V 0 1.0 1.0 1.5 2.0 2.5 Ta=25°C VGS=4V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 8 7 6 80mA 5 ID=40mA 4 3 2 1 2 3 4 5 7 6 8 9 Gate to Source Voltage, VGS -- V 10 25°C --25°C 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 7 2 0.1 3 5 IT00032 RDS(on) -- ID VGS=1.5V 3 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 2 3 5 7 0.01 2 3 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Static Drain to Source On-State Resistance, RDS(on) -- Ω =2 GS V 40 =4.0 I D= , VGS A 80m I D= 4 5 5 IT00034 | yfs | -- ID 1.0 .5V ,V mA 3 IT00033 6 5 2 5 1.0 0.001 5 RDS(on) -- Ta 7 --25°C 2 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 1.0 0.01 25°C 3 100 7 3 Ta=75°C Drain Current, ID -- A VGS=2.5V 5 5 IT00031 RDS(on) -- ID 10 7 1.0 0.01 0 1 IT00030 RDS(on) -- ID 10 9 0 3.0 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 VDS=10V 7 5 25°C 3 Ta= 2 C --25° 75°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.6445-3/6 MCH6602 IS -- VSD 1.0 7 Switching Time, SW Time -- ns 25 --2 5°C °C 75 °C 2 Ta = Source Current, IS -- A 3 7 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 3 td (off) tf 2 100 7 tr 5 3 td(on) 2 Gate to Source Voltage, VGS -- V 3 2 Ciss Coss 5 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg VDS=10V ID=150mA 9 7 3 Drain Current, ID -- A 10 5 10 2 IT00037 f=1MHz 7 Ciss, Coss, Crss -- pF 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 5 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 18 Drain to Source Voltage, VDS -- V Drain Current, ID -- A 1m s 7 10m ID=0.35A s 2 0.1 7 5 3 2 0.01 DC 100 ms ope rat Operation in this area is limited by RDS(on). ion Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.0 2 3 5 7 0.4 0.6 10 2 Drain to Source Voltage, VDS -- V 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W IDP=1.4A(PW≤10μs) 3 0.2 1.6 IT00040 PD -- Ta 1.0 1.0 5 0 IT00039 ASO 3 2 20 W 0.8 he nm ou nte do 0.6 nc era mi cs 0.4 ub str ate (90 0m m2 ✕0 .8m 0.2 m) 1u nit 0 3 5 IT01117 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01118 No.6445-4/6 MCH6602 Outline Drawing MCH6602-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6445-5/6 MCH6602 Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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