Infineon IPN70R600P7S 700v coolmos⪠p7 power transistor Datasheet

IPN70R600P7S
MOSFET
700VCoolMOSªP7PowerTransistor
PG-SOT223
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.
Drain
Pin 2, Tab
Features
•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Gate
Pin 1
Source
Pin 3
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
700
V
RDS(on),max
0.6
Ω
Qg,typ
10.5
nC
ID,pulse
20.5
A
Eoss @ 400V
1.2
µJ
V(GS)th,typ
3
V
ESD class (HBM)
2
Type/OrderingCode
Package
Marking
IPN70R600P7S
PG-SOT223
70S600
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
8.5
5
A
TC = 20°C
TC = 100°C
-
20.5
A
TC=25°C
-
-
3.2
A
measured with standard leakage
inductance of transformer of 7µH
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage
VGS
-16
-30
-
16
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
6.9
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
2.3
A
TC=25°C
IS,pulse
-
-
20.5
A
TC = 25°C
dv/dt
-
-
1
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed
dif/dt
-
-
50
A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms, TC=25°C, t=1min
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Application (Flyback) relevant
avalanche current, single pulse3)
IAS
MOSFET dv/dt ruggedness
2)
Diode pulse current
4)
Reverse diode dv/dt
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - solder
point
Values
Min.
Typ.
Max.
RthJS
-
-
18.2
°C/W -
Thermal resistance, junction - ambient
RthJA
for minimal footprint
-
-
160
°C/W minimal footprint
Thermal resistance, junction - ambient
RthJA
soldered on copper area
-
-
75
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
reflow MSL1
1)
DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
Pulse width tp limited by Tj,max
3)
Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.50
V
VDS=VGS,ID=0.09mA
-
10
1
-
µA
VDS=700V,VGS=0V,Tj=25°C
VDS=700V,VGS=0V,Tj=150°C
-
-
1
µA
VGS=20V,VDS=0V
Min.
Typ.
Max.
V(BR)DSS
700
-
Gate threshold voltage
V(GS)th
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage current incl. Zener
IGSS
diode
Drain-source on-state resistance
RDS(on)
-
0.49
1.03
0.60
-
Ω
VGS=10V,ID=1.8A,Tj=25°C
VGS=10V,ID=1.8A,Tj=150°C
Gate resistance
RG
-
10
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
364
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
7
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
17
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
200
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
14
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=5.3Ω
Rise time
tr
-
5.5
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=5.3Ω
Turn-off delay time
td(off)
-
63
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=5.3Ω
Fall time
tf
-
23
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=5.3Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.6
-
nC
VDD=400V,ID=1.4A,VGS=0to10V
Gate to drain charge
Qgd
-
3.7
-
nC
VDD=400V,ID=1.4A,VGS=0to10V
Gate charge total
Qg
-
10.5
-
nC
VDD=400V,ID=1.4A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=400V,ID=1.4A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
4
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=2.5A,Tj=25°C
190
-
ns
VR=400V,IF=1.4A,diF/dt=50A/µs
-
0.8
-
µC
VR=400V,IF=1.4A,diF/dt=50A/µs
-
9
-
A
VR=400V,IF=1.4A,diF/dt=50A/µs
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
10
9
1 µs
101
8
10 µs
7
100 µs
100
ID[A]
Ptot[W]
6
5
1 ms
10-1
4
3
10 ms
10-2
2
1
DC
0
0
25
50
75
100
125
10-3
150
100
101
102
TC[°C]
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
102
10
1 µs
101
10 µs
101
100 µs
0.5
ZthJC[K/W]
ID[A]
100
1 ms
10-1
0.2
0.1
10
10 ms
0
0.05
0.02
10-2
0.01
single pulse
DC
10-3
100
101
102
103
10-1
10-5
10-4
10-3
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
10-1
100
tp[s]
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
25
18
20 V
10 V
8V
20 V
10 V
8V
16
20
7V
14
7V
12
6V
15
ID[A]
ID[A]
6V
10
5.5 V
8
10
5
5.5 V
6
5V
4
0
5
10
15
4.5 V
2
4.5 V
0
5V
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
3.0
2.00
1.80
2.5
5V
5.5 V
6.5 V
6V
1.60
1.40
1.20
7V
RDS(on)[Ω]
RDS(on)[Ω]
2.0
10 V
1.5
1.0
1.00
98%
0.80
0.60
typ
0.40
0.5
0.20
0.0
0
5
10
15
20
0.00
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=1.8A;VGS=10V
7
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
25
10
9
20
8
25 °C
120 V
7
400 V
VGS[V]
6
ID[A]
15
150 °C
10
5
4
3
5
2
1
0
0
2
4
6
8
10
0
12
0
5
VGS[V]
10
15
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram13:Drain-sourcebreakdownvoltage
2
10
840
25 °C
125 °C
820
800
780
101
IF[A]
VBR(DSS)[V]
760
100
740
720
700
680
660
640
620
10-1
0
1
2
3
600
-75
-50
-25
VSD[V]
25
50
75
100
125
150
175
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
0
VBR(DSS)=f(Tj);ID=1mA
8
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
Diagram14:Typ.capacitances
Diagram15:Typ.Cossstoredenergy
4
10
3.0
2.5
103
Ciss
2.0
2
C[pF]
Eoss[µJ]
10
101
1.5
Coss
1.0
Crss
100
10-1
0.5
0
100
200
300
400
500
0.0
0
VDS[V]
200
300
400
500
600
700
VDS[V]
C=f(VDS);VGS=0V;f=250kHz
Final Data Sheet
100
Eoss=f(VDS)
9
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
6PackageOutlines
DOCUMENT NO.
Z8B00180553
SCALE
DIM
A
A1
A2
b
b2
c
D
E
E1
e
e1
L
N
O
MILLIMETERS
MIN
MAX
1.52
1.80
0.10
1,50
1.70
0.60
0.80
2.95
3.10
0.24
0.32
6.30
6.70
6.70
7.30
3.30
3.70
2.3 BASIC
4.6 BASIC
0.75
1.10
3
0
INCHES
MIN
0.060
0.059
0.024
0.116
0.009
0.248
0.264
0.130
MAX
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0.091 BASIC
0.181 BASIC
0.030
0.043
3
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
24-02-2016
REVISION
01
Figure1OutlinePG-SOT223,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
7AppendixA
Table11RelatedLinks
• IFXCoolMOSªP7Webpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.2,2018-02-13
700VCoolMOSªP7PowerTransistor
IPN70R600P7S
RevisionHistory
IPN70R600P7S
Revision:2018-02-13,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2017-06-23
Release of final version
2.1
2017-09-15
Changed to MSL level 1
2.2
2018-02-13
Corrected front page text
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PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
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TrademarksupdatedAugust2015
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Final Data Sheet
13
Rev.2.2,2018-02-13
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