MCC MCQ4828 Dual n -channel mosfet Datasheet

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omponents
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MCQ4828
Features
•
Halogen free available upon request by adding suffix "-HF"
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
•
Epoxy meets UL 94 V-0 flammability rating
•
•
Dual
N -Channel Mosfet
Moisture Sensitivity Level 1
Marking:Q4828
SOP-8
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
(t ≤10s) (note 1)
ID
4.5
A
Pulsed Drain Current (note 2)
IDM
20
A
18
mJ
PD
1.25
W
RθJA
100
℃/W
Repetitive Avalenche Energy
0.1mH (note 2)
Power Dissipation
Thermal Resistance from
Junction to Ambient
Operating Junction Temperature
Storage Temperature
EAR,EAS
TJ
150
TSTG
-55 ~+150
B
D
Unit
A
C
F
E
K
H
J
G
℃
DIMENSIONS
Equivalent Circuit
DIM
A
B
C
D
E
F
G
H
J
K
θ
Revision: A
INCHES
MIN
MAX
0.053
0.069
0.004
0.053
0.013
0.007
0.189
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0°
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0.010
0.061
0.020
0.010
0.197
8°
MM
MIN
1.350
MAX
1.750
NOTE
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.800
5.000
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0°
8°
2017/01/13
MCC
Micro Commercial Components
Electrical characteristics (Ta=25
Parameter
unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =60V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
60
V
1
µA
±100
nA
2.1
3
V
VGS =10V, ID =4.5A
40
56
mΩ
VGS =4.5V, ID =3A
55
77
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4.5A
Diode forward voltage (note 3)
VSD
IS=1A, VGS = 0V
1
6
S
1
V
540
pF
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
60
pF
Crss
25
pF
td(on)
4.7
ns
VDS =30V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
tr
VGS=10V,VDS=30V,
2.3
ns
td(off)
RL=6.7Ω,RGEN=3Ω
15.7
ns
1.9
ns
Turn-off fall time
Total Gate Charge (10V)
Total Gate Charge (4.5V)
tf
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =30V,VGS =10V,ID =4.5A
10.5
nC
5.5
nC
1.6
nC
2.2
nC
Notes :
1. The value in any given application depends on the user’s specific board design.
2. Repetitive rating : Pulse width limited by junction temperature.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
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Typical Characteristics
Micro Commercial Components
Output Characteristics
20
Pulsed
VGS= 10V
Transfer Characteristics
20
VGS= 5.0V
VDS= 5V
Pulsed
VGS= 4.5V
ID
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
15
(A)
15
10
VGS= 4.0V
5
10
Ta=100℃
Ta=25℃
5
VGS= 3.5V
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0
5
0
1
(V)
2
200
Ta=25℃
(mΩ)
150
RDS(ON)
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
Pulsed
150
100
ID= 4.5A
50
4
8
GATE TO SOURCE VOLTAGE
VGS
VGS= 4.5V
100
VGS= 10V
50
0
10
0
5
20
10
ID
15
20
1.0
1.2
(A)
IS —— VSD
Threshold Voltage
Ta=25℃
Pulsed
IS (A)
2.1
VTH
(V)
10
DRAIN CURRENT
(V)
2.2
2.0
SOURCE CURRENT
THRESHOLD VOLTAGE
5
(V)
Ta=25℃
Pulsed
2
4
VGS
RDS(ON) —— ID
RDS(ON) —— VGS
200
0
3
GATE TO SOURCE VOLTAGE
ID= 250uA
1.9
1
0.1
1.8
1.7
25
50
75
AMBIENT TEMPERATURE
Revision: A
100
Ta
0.01
0.4
125
(℃ )
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel:4Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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Revision: A
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