ON NSVD350HT1G High voltage switching diode Datasheet

NSD350H
High Voltage Switching
Diode
The NSD350H is a high voltage switching diode in a SOD−323
surface mount package.
Features
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• Small Footprint Package, SOD−323
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−free Device, Halogen Free/BFR Free and are RoHS Compliant
1
CATHODE
2
ANODE
MARKING
DIAGRAM
Typical Applications
•
•
•
•
•
Flat Panel TVs
Power Supply
Industrial
Wireless Handsets
Automotive Modules
SOD−323
CASE 477
STYLE 1
AJ = Specific Device Code
M = Date Code
G = Pb−Free Package
MAXIMUM RATINGS Single Diode (TA = 25°C)
Symbol
Max
Unit
Reverse Voltage
VR
350
V
Forward Current (DC)
IF
200
mA
Rating
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 10 s
t = 100 s
t = 1 ms
t = 10 ms
IFSM
A
12
5
2
1.5
Symbol
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSD350HT1G
NSVD350HT1G
Package
Shipping†
SOD−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
AJ MG
G
Max
Unit
250
2
mW
mW/°C
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 1)
Thermal Resistance,
Junction to Ambient
RJA
(Note 1)
500
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 100 mm2 2 oz Cu PCB
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 0
1
Publication Order Number:
NSD350H/D
NSD350H
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
Symbol
Min
V(BR)R
350
Typ
Max
Unit
V
Reverse Leakage (VR = 300 V)
IR
150
nA
Reverse Leakage (VR = 350 V)
IR
5
A
Forward Voltage (IF = 100 mA)
VF
1.1
V
Total Capacitance (VR = 0 V, f = 1.0 MHz)
CT
5.0
pF
Reverse Recovery Time (IF = IR = 10 mA, IR(rec) = 1.0 mA, Figure 1)
trr
55
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 +10 V
2k
100 H
0.1 F
IF
tr
0.1 F
tp
T
IF
trr
10%
T
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSD350H
TYPICAL CHARACTERISTICS
1E−04
IF, FORWARD CURRENT (mA)
150°C
IR, LEAKAGE CURRENT (A)
1E−05
125°C
1E−06
85°C
1E−07
1E−08
25°C
1E−09
−55°C
1E−10
1E−11
150°C
100
125°C
10
85°C
1
50
100
150
200
250
300
350
0.2 0.3
0.4
0.5
0.6
0.7
−55°C
0.8
0.9
VR, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 2. Reverse Leakage Current
Figure 3. Forward Voltage
2.0
CT, TOTAL CAPACITANCE (pF)
0
25°C
1.8
TJ = 25°C
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3
25
30
1.0
1.1
NSD350H
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NSD350H/D
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