BSC670N25NSFD MOSFET OptiMOSTM3Power-Transistor,250V SuperSO8 8 Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Value Unit VDS 250 V RDS(on),max 67 mΩ ID 24 A Type/OrderingCode Package BSC670N25NSFD PG-TDSON-8 1) 5 6 2 Marking 670N25NF 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 24 19 A TC=25°C TC=100°C - 96 A TC=25°C - - 69 mJ ID=16A,RGS=25Ω dv/dt - - 60 kV/µs ID=46A,VDS=125V, di/dt=1500A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodedv/dt 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.6 1 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 250 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=200V,VGS=0V,Tj=25°C VDS=200V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 59 67 mΩ VGS=10V,ID=24A Gate resistance RG - 3.3 5 Ω - Transconductance gfs 24 47 - S |VDS|>2|ID|RDS(on)max,ID=24A 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 2410 pF VGS=0V,VDS=125V,f=1MHz 103 137 pF VGS=0V,VDS=125V,f=1MHz - 5.4 - pF VGS=0V,VDS=125V,f=1MHz td(on) - 8.0 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Rise time tr - 3.6 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Fall time tf - 4.0 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1810 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8.2 - nC VDD=125V,ID=24A,VGS=0to10V Gate to drain charge Qgd - 2.9 - nC VDD=125V,ID=24A,VGS=0to10V Switching charge Qsw - 5.6 - nC VDD=125V,ID=24A,VGS=0to10V Gate charge total Qg - 22 30 nC VDD=125V,ID=24A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=24A,VGS=0to10V Output charge Qoss - 48 - nC VDD=125V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 24 A TC=25°C IS,pulse - - 96 A TC=25°C Diode hard commutation current IS,hard - - 46 A TC=25°C,diF/dt=1500A/µs Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=24A,Tj=25°C trr - 69 138 ns VR=125V,IF=16.1A,diF/dt=100A/µs Qrr - 153 306 nC VR=125V,IF=16.1A,diF/dt=100A/µs Diode pulse current3) 4) 1) Reverse recovery time 1) Reverse recovery charge 1) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition 3) Diode pulse current is defined by thermal and/or package limits 4) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs 2) Final Data Sheet 4 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 30 150 ID[A] Ptot[W] 20 100 10 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 Ptot=f(TC) ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 1 µs 100 10 µs 0.5 ZthJC[K/W] 100 µs ID[A] 200 TC[°C] 101 1 ms 0.2 0.1 10-1 10 ms 0 10 DC 0.05 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 100 10 V 50 80 7V 4.5 V 5V 5V RDS(on)[mΩ] ID[A] 40 30 20 10 V 40 4.5 V 20 10 0 7V 60 0 1 2 3 4 0 5 0 10 20 VDS[V] 30 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 40 80 70 30 60 gfs[S] ID[A] 50 20 40 30 175 °C 10 20 10 25 °C 0 0 2 4 6 8 0 0 VGS[V] 20 30 40 50 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 6 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 220 4.0 200 3.5 180 140 90 µA 2.5 120 100 VGS(th)[V] RDS(on)[mΩ] 900 µA 3.0 160 98% 2.0 1.5 80 typ 60 1.0 40 0.5 20 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=24A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25°C, 98% 175°C, 98% Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 200 V 125 V 101 VGS[V] IAS[A] 6 25 °C 50 V 4 100 °C 2 150 °C 100 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=24Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 290 280 VBR(DSS)[V] 270 260 250 240 230 220 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Figure2OutlineFootprint(TDSON-8) Final Data Sheet 10 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,250V BSC670N25NSFD RevisionHistory BSC670N25NSFD Revision:2016-12-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2016-05-13 Rev. 1.2 (preliminary datasheet) 2.0 2016-10-25 Release of final version 2.1 2016-12-05 Update Eas TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2016-12-05