BWTECH MSU2N70 700v n-channel mosfet Datasheet

MSU2N70
700V N-Channel MOSFET
Description
The MSU2N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 10.5 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
• Extremely Low Intrinsic Capacitances
Symbol
Dimensions in
Dimensions in
Millimeters
Inches
min
max
min
max
• RoHS compliant package
A
2.15
2.45
0.85
0.96
Packing & Order Information
A1
1.00
1.40
0.39
0.55
80/Tube ; 4,000/Box
B
1.25
1.75
0.49
0.69
b
0.45
0.75
0.18
0.3
b1
0.65
0.95
0.26
0.37
C
0.38
0.64
0.15
0.25
C1
0.38
0.64
0.15
0.25
D
6.30
6.70
2.48
2.64
D1
5.10
5.50
2.01
2.17
E
5.30
5.70
2.09
2.24
Graphic symbol
e
Publication Order Number: [MSU2N70]
2.3 (typ.)
0.91 (typ.)
e1
4.4
4.8
1.73
1.89
L
7.4
8.0
2.91
3.15
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
1.6
A
Drain Current -Continuous (TC=100°C)
1.0
A
6
A
ID
IDM
Drain Current Pulsed
EAS
Single Pulsed Avalanche Energy
110
mJ
EAR
Repetitive Avalanche Energy
4.4
mJ
IAR
Avalanche Current
1.6
A
dV/dt
Peak Diode Recovery dV/dt
5.5
V/ns
Power Dissipation (TC = 25 °C)
44
W
0.22
W/°C
-55 to +150
°C
PD
TJ,TSTG
- Derate above 25°C
Operating and Storage Temperature Range
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
1.72
RθJA
Junction-to-Ambient
83.3
Units
°C/W
Thermal Resistance Characteristics
Symbol
Parameter
Max.
Units
2.87
Rthjc
Typical thermal resistance
°C/W
55*
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
2.0
--
4.0
V
VGS
VDS = VGS , ID = 250μA
*RDS(ON)
VGS = 10 V , ID = 1 A
--
5.5
6.0
Ω
BVDSS
VGS = 0 V , ID=250μA
700
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
--
0.7
--
--
--
IDSS
VDS = 700 V , VGS = 0 V
VDS = 560 V , TC = 125°C
10
100
uA
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
td(on)
Min
Typ.
Max.
Units
--
10
20
ns
tr
VDS = 350 V, ID = 1.6 A,
--
25
50
ns
td(off)
RG = 25 Ω
--
20
40
ns
--
25
50
ns
--
10.5
14
nC
--
2.0
--
nC
--
4.0
--
nC
--
340
445
pF
--
45
60
pF
--
7.5
10
pF
Min
Typ.
Max.
Units
IS
--
--
1.6
ISM
--
--
6
tf
Qg
Qgs
VDS = 560 V,ID = 1.6 A,
VGS = 10 V
Qgd
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
CRSS
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
A
VSD
IS = 1.6 A , VGS = 0 V
--
--
1.5
V
trr
IS = 1.6 A , VGS = 0 V
--
250
--
ns
Qrr
diF/dt = 100A/μs
--
1.2
--
uC
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ=25℃
3. ISD≦1.6A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM
FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N70
700V N-Channel MOSFET
Disclaimer
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Publication Order Number: [MSU2N70]
© Bruckewell Technology Corporation Rev. A -2014
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