Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 CYStech Electronics Corp. N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS ID@VGS=10V(-10V) RDSON@VGS=10V(-10V) typ. RDSON@VGS=4.5V(-4.5V) typ. N-CH 100V 2.3A 126.5mΩ 130mΩ P-CH -100V -1.7A 216mΩ 227mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline DFN3×3 MTBA5C10V8 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTBA5C10V8-0-T6-G Package Shipping DFN3×3 3000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTBA5C10V8 CYStek Product Specification Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 2/13 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage VGS Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) IDSM TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V) Continuous Drain Current TC=100 °C, VGS=10V (-10V) Pulsed Drain Current IDM *3 Single device operation Total Power Dissipation ID Single device value at dual operation TC=25°C Limits N-channel P-channel 100 -100 ±20 ±20 2.3 -1.7 1.8 -1.4 3.4 -2.6 2.4 -1.8 10 -10 Operating Junction and Storage Temperature Range V A 1.5 *2 PDSM 1.24 *2 W 3.75 PD * 1 TC=100°C Unit 1.88 Tj; Tstg °C -55~+175 Thermal Data Parameter Symbol Max. Thermal Resistance, Junction-to-ambient, single device operation Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Max. Thermal Resistance, Junction-to-case Rth,j-a Rth,j-c Value 84 *2 101 *2 40 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. . 2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°C. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. 100 1 - 126.5 130.0 7 2.5 ±100 1 10 155 175 - - 1221 31 22 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss MTBA5C10V8 S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=100V, VGS=0V VDS=100V, VGS=0V, Tj=70°C VGS=10V, ID=2.3A VGS=5V, ID=2A VDS=5V, ID=2.3A pF VDS=25V, VGS=0V, f=1MHz V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - 9.2 16.6 37.2 15.6 18.7 2.7 3.1 - - 0.78 18 15.3 1.2 - Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 3/13 ns VDS=50V, ID=1A, VGS=10V, RG=6Ω nC VDS=80V, ID=2.3A, VGS=10V V ns nC VGS=0V, IS=2.3A IS=2.3A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. -100 -1.0 - 216 227 5.3 -2.5 ±100 -1 -10 285 295 - - 1282 58 27 8.4 17.8 60.2 18.6 19.1 3.0 3.1 - - -0.82 16.6 13.4 -1.2 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-100V, VGS=0V VDS=-10V, VGS=0V, Tj=70°C VGS=-10V, ID=-1.5A VGS=-5V, ID=-1A VDS=-5V, ID=-1.5A pF VDS=-25V, VGS=0V, f=1MHz ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-80V, ID=-1.7A, VGS=-10V V VGS=0V, IS=-2.3A ns nC IS=-2.3A, VGS=0V, dI/dt=100A/μs V nA μA mΩ Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 4/13 Recommended Soldering Footprint unit : mm MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 5/13 Typical Characteristics : Q1( N-channel ) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 9 BVDSS, Normalized Drain-Source Breakdown Voltage 10 10V, 9V, 8V, 7V, 6V, 5V, 4V ID, Drain Current (A) 8 7 6 VGS=3V 5 4 3 2 1.2 1 0.8 ID=250μA, VGS=0V 1 0.6 0 0 1 -75 -50 -25 5 2 3 4 VDS, Drain-Source Voltage(V) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 VGS=2.5V 1000 VGS=3V VGS=4.5V VGS=10V 100 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 400 ID=2.3A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 350 300 250 200 150 2.4 2 VGS=5V, ID=2A RDSON@Tj=25°C : 130mΩ typ. 1.6 1.2 VGS=10V, ID=2.3A 0.8 RDSON@Tj=25°C : 126.5mΩ 0.4 100 0 MTBA5C10V8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 6/13 Typical Characteristics(Cont.) : Q1( N-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 100 C oss Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 75 100 125 150 175 200 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Gate Charge Characteristics 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 8 6 4 VDS=80V 2 ID=2.3A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 5 10 15 Qg, Total Gate Charge(nC) 20 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 3 100 1 100μ s 1ms 0.1 10ms 100ms 1s TA=25°C, Tj=150°C VGS=10V, θ JA=84°C/W Single Pulse 0.01 ID, Maximum Drain Current(A) RDSON Limite 10 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) DC 2.5 2 1.5 1 TA=25°C VGS=10V RθJA=84°C/W 0.5 0 0.001 0.1 MTBA5C10V8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 7/13 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 10 100 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS =5V 9 TJ(MAX) =150°C TA=25°C θ JA=84°C/W 8 Power (W) ID, Drain Current(A) 7 6 5 4 10 3 2 1 1 0.001 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 6 0.01 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=84°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 Maximum Drain Current vs Case Temperature ID, Maximum Drain Current(A) 4 3.5 3 2.5 2 1.5 VGS=5V RθJC=40°C/W Tj(max)=175°C 1 0.5 0 25 MTBA5C10V8 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 8/13 Typical Characteristics : Q2( P-channel) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 8 -I D, Drain Current (A) 1.4 10V 9V 8V 7V 6V 5V 4V 6 -BVDSS, Normalized Drain-Source Breakdown Voltage 10 -VGS=3V 4 2 1.2 1 0.8 -ID=250μA, VGS=0V 0.6 0 0 1 -75 -50 -25 5 2 3 4 -VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V -VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 -VGS=4.5V -VGS=10V 1000 -VGS=2.5V -VGS=3V 100 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 -IDR, Reverse Drain Current(A) 8 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 550 R DS(on), Normalized Static DrainSource On-State Resistance 600 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) -ID=1.5A 500 450 400 350 300 250 2 VGS=-5V, ID=-1A RDSON@Tj=25°C : 227mΩ typ. 1.6 1.2 VGS=-10V, ID=-1.5A 0.8 RDSON@Tj=25°C : 216mΩ typ. 0.4 200 0 MTBA5C10V8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 9/13 Typical Characteristics(Cont.) : Q2(P-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.6 ID=-250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 25 50 75 100 125 150 175 200 Gate Charge Characteristics 10 10 -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 0 Tj, Junction Temperature(°C) 1 0.1 VDS=-5V Pulsed Ta=25°C 8 6 4 VDS=-80V 2 ID=-1.7A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 4 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 2 100 -I D, Drain Current(A) 10 -I D, Maximum Drain Current(A) 1.8 RDSON Limite 100μs 1 1ms 10ms 100ms 0.1 1s TA=25°C, Tj=150°C VGS=-10V, θ JA=84°C/W Single Pulse 0.01 DC 1.6 1.4 1.2 1 0.8 TA=25°C VGS=-10V RθJA=84°C/W 0.6 0.4 0.2 0 0.001 0.1 MTBA5C10V8 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 10/13 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics 100 10 9 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS =-5V TJ(MAX) =150°C TA=25°C θ JA=84°C/W 8 Power (W) -ID, Drain Current(A) 7 6 5 4 10 3 2 1 0 0 1 2 3 4 5 1 0.001 6 0.01 -VGS, Gate-Source Voltage(V) 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=84°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 Maximum Drain Current vs Case Temperature -I D, Maximum Drain Current(A) 3 2.5 2 1.5 1 VGS=-5V RθJC=40°C/W Tj(max)=175°C 0.5 0 25 MTBA5C10V8 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 11/13 Reel Dimension Carrier Tape Dimension MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 12/13 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 13/13 DFN3×3 Dimension Marking: D1 D1 D2 D2 Date Code BA5 C10 S1 G1 S2 G2 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Millimeters Min. Max. 0.650 0.850 0.152 REF 0.000 0.050 2.900 3.100 0.935 1.135 0.280 0.480 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 D2 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.037 0.045 0.011 0.019 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBA5C10V8 CYStek Product Specification