CYSTEKEC MTE130N20J3 N-channel enhancement mode power mosfet Datasheet

Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20J3
BVDSS
ID@VGS=10V, TC=25°C
200V
ID@VGS=10V, TA=25°C
1.9A
156mΩ
18A
RDSON(TYP) @ VGS=10V, ID=9A
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-252(DPAK)
MTE130N20J3
G
D S
G:Gate D:Drain S:Source
Ordering Information
Device
MTE130N20J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE130N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
Avalanche Energy @ L=1mH, ID=3A, VDD=50V
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
Power Dissipation
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 3)
(Note 4)
(Note 4)
(Note 3)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
Limits
VDS
VGS
200
±20
18
13
30
1.9
1.5
3
4.5
125
62.5
2
1.3
-55~+175
ID
IDM
IDSM
IAS
EAS
PD
PDSM
Tj, Tstg
Unit
V
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
(Note 2)
(Note 4)
Rth,j-a
Value
1.2
62.5
90
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTE130N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
Test Conditions
200
2.0
-
0.2
12
156
4.0
±100
1
10
195
V
V/°C
V
S
nA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=9A
VGS=±20V
VDS =180V, VGS =0V
VDS =180V, VGS =0V, Tj=125°C
VGS =10V, ID=9A
19
5
7.2
12.6
35
27.6
14.6
813
85
36
-
nC
VDS=160V, ID=18A, VGS=10V
ns
VDS=100V, ID=18A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
0.86
80
245
18
30
1.2
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
A
V
ns
nC
IS=18A, VGS=0V
IF=18A, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTE130N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V
ID, Drain Current(A)
25
VGS=6V
20
15
10
VGS=5V
5
VGS=4.5V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VSD, Source-Drain Voltage(V)
VGS=4.5V
100
VGS=6V
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
600
3
500
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=9A
400
300
200
100
2.5
VGS=10V, ID=9A
2
1.5
1
0.5
RDS(ON) @Tj=25°C :156mΩ typ
0
0
0
MTE130N20J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
GFS , Forward Transfer Admittance(S)
100
VGS, Gate-Source Voltage(V)
VDS=100V
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=40V
6
VDS=160V
4
2
ID=18A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
Total Gate Charge---Qg(nC)
20
24
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
20
ID, Maximum Drain Current(A)
100
100μs
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
RDS(ON)
Limit
10
1ms
10ms
100ms
1
TC=25°C, Tj=175°, VGS=10V
RθJC=1.2°C/W, Single Pulse
DC
16
12
8
4
VGS=10V, RθJC=1.2°C/W
0
0.1
0.1
MTE130N20J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
3000
30
2500
20
2000
Power (W)
ID, Drain Current (A)
VDS=10V
25
15
1500
10
1000
5
500
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
TJ(MAX) =175°C
TC=25°C
θ JC=1.2°C/W
0
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.2 ° C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
MTE130N20J3
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
1.E+02
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE130N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
E130
N20
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE130N20J3
CYStek Product Specification
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