Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTEF1P15V8 BVDSS -150V -4A @ VGS=-10V, TC=25°C ID 0.64Ω @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.7Ω@ VGS=-6V, ID=-1A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTEF1P15V8 DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTEF1P15V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTEF1P15V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current TC=25℃ Continuous Source-Drain Diode Current Avalanche Current Avalanche Energy @ L=10mH, ID=-1.4A, RG=25Ω TC=25℃ TC=70℃ Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -150 ±30 -4.0 -2.5 -1.1 -0.88 -16.0 -4 -1.4 9.8 42 27 2.1 1.3 -55~+150 ID *3 *3 IDM IS IAS EAS *1, 2 PD *3 *3 Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient Thermal Resistance, Junction-to-case Symbol Rth,j-a Rth,j-c *3 Typ 50 2.5 Maximum 60 3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle≤1%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum pad of 2 oz. copper. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ΔBVDSS/ΔTJ ΔVGS(th)/ ΔTJ VGS(th) IGSS IDSS RDS(ON) GFS MTEF1P15V8 *1 *1 Min. Typ. Max. Unit -150 -2 - -100 6 -3 0.64 0.7 2.5 -4 ±100 -1 -10 0.85 0.9 - V mV/°C V nA μA Ω S Test Conditions VGS=0V, ID=-250μA ID=-250μA VDS =VGS, ID=-250μA VGS=±30V, VDS=0V VDS =-120V, VGS =0V VDS =-120V, VGS =0V, TJ=55°C VGS =-10V, ID=-1.4A VGS =-6V, ID=-1A VDS =-10V, ID=-1.4A CYStek Product Specification CYStech Electronics Corp. Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 8.3 2.4 2.2 8 6 20 4 475 31 13 - - -0.78 60 120 -4 -16 -1.2 - Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 3/9 nC VDS=-75V, ID=-4A,VGS=-10V ns VDS=-75V, ID=-1A, VGS=-10V, RG=6Ω pF VDS=-25V, VGS=0V, f=1MHz A V ns nC TC=25°C IF=-1A, VGS=0V IF=-1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTEF1P15V8 CYStek Product Specification Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 10 -I D, Drain Current(A) 10V,9V,8V,7V,6V 8 6 5V 4 2 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -VGS=4V 0.4 0 0 4 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 12 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 1.8 -VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(Ω) 2.0 1.6 1.4 1.2 VGS=-4.5V VGS=-6V 1.0 0.8 0.6 0.4 VGS=-10V 0.2 Tj=25°C VGS=0V 1 0.8 Tj=150°C 0.6 0.4 0.2 0.0 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 2.4 1.8 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-1.4A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 VGS=-10V, ID=-1.4A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 0.64Ω typ. 0 0 0 MTEF1P15V8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μ A 0.6 0.4 10 0 10 20 30 40 -VDS, Drain-Source Voltage(V) -75 -50 -25 50 50 75 100 125 150 175 Gate Charge Characteristics 10 10 RDS(ON) Limited -VGS, Gate-Source Voltage(V) 100 -I D, Drain Current(A) 25 Tj, Junction Temperature(°C) Maximum Safe Operating Area 100μs 1 1ms 0.1 10ms 0.01 100ms 1s 10s DC TA=25°C, Tj=150°, VGS=-10V RθJA=135°C/W, Single Pulse 8 6 4 VDS=-75V 2 ID=-4A 0 0.001 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 Forward Transfer Admittance vs Drain Current -I D, Maximum Drain Current(A) 0.1 MTEF1P15V8 4 6 8 Qg, Total Gate Charge(nC) 10 1.5 1 0.01 0.001 2 Maximum Drain Current vs Junction Temperature 10 GFS, Forward Transfer Admittance(S) 0 VDS=-10V Pulsed Ta=25°C 1.2 0.9 0.6 0.3 VGS=-10V, RθJA=60°C/W 0 0.01 0.1 1 -ID, Drain Current(A) 10 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 150 10 Peak Transient Power (W) VDS=-10V -ID, Drain Current(A) 8 6 4 2 0 0 2 4 6 -VGS , Gate-Source Voltage(V) 8 10 TJ(MAX) =150°C TA=25°C θ JA=135°C/W 120 90 60 30 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 D=0.5 ZθJC(t), Thermal Response 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=135°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTEF1P15V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTEF1P15V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEF1P15V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896V8 Issued Date : 2014.05.05 Revised Date : Page No. : 9/9 DFN3×3 Dimension Marking: D D D D EF1 P15 Date Code S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Inches Min. Max. 0.0276 0.0354 0.0000 0.0197 0.0094 0.0138 0.0039 0.0079 0.1280 0.1339 0.1201 0.1280 0.0945 0.1024 DIM A A1 b c D D1 D2 Millimeters Min. Max. 0.70 0.90 0.00 0.50 0.24 0.35 0.10 0.20 3.25 3.40 3.05 3.25 2.40 2.60 DIM E E1 e H L L1 L2 Inches Min. Max. 0.1181 0.1260 0.0531 0.0610 0.0256 BSC 0.1260 0.1339 0.0118 0.0197 0.0039 0.0079 0.0445 REF Millimeters Min. Max. 3.00 3.20 1.35 1.55 0.65 BSC 3.20 3.40 0.30 0.50 0.10 0.20 1.13 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEF1P15V8 CYStek Product Specification