NJ2N60 POWER MOSFET 2.0A 600V N-CHANNEL POWER MOSFET DESCRIPTION The NJ2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220 1 FEATURES TO-220F * RDS(ON) = 5 @VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ2N60-LI NJ2N60-BL NJ2N60F-LI NJ2N60A-LI NJ2N60D-TR NJ2N60D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ2N60 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25° , unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) 2N60 Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F TO-251 Power Dissipation TO-252 SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD TC = 25° RATINGS 600 ±30 2.0 2.0 8.0 140 UNIT V V A A A mJ 4.5 4.5 54 22 mJ V/ns W W 40 W Junction Temperature TJ +150 ° Operating Temperature TOPR -55 ~ +150 ° Storage Temperature TSTG -55 ~ +150 ° Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting T J = 25°C 4. ISD 2.4A, di/dt 200A/ s, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 SYMBOL JA Jc RATINGS 62.5 62.5 UNIT ° /W ° /W 100 ° /W 2.32 5.5 ° /W ° /W 2.87 ° /W NJ2N60 POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ =25° , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage 2N60 Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time 2N60 Turn-On Rise Time Gate-Source Leakage Current Turn-Off Delay Time Turn-Off Fall Time IGSS BVDSS/ V GS(TH) RDS(ON) CISS COSS CRSS tR MIN TYP MAX UNIT VGS = 0V, ID = 250 A 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V TJ ID=250 A, Referenced to 25°C V DS = VGS, ID = 250 A VGS = 10V, ID =1A VDS =25V, VGS =0V, f =1MHz tD (ON) tD(OFF) 2N60 TEST CONDITIONS VDD =300V, ID =2.4A, RG=25 (Note 1, 2) tF Total Gate Charge QG VDS=480V, VGS=10V, Gate-Source Charge QGS ID=2.4A (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/ s (Note 1) Reverse Recovery Charge Q RR Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2% 2. Essentially independent of operating temperature 0.4 V 10 A 100 nA -100 nA V/° 4.0 5 V 3.6 270 40 5 350 50 7 pF pF pF 10 40 30 60 ns ns 20 50 50 60 ns ns 9.0 1.6 4.3 11 nC nC nC 1.4 2.0 8.0 V A A ns C 2.0 180 0.72 NJ2N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS = 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ2N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% t D(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms NJ2N60 POWER MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 400 0 200 600 800 1000 Drain-Source Breakdown Voltage, BVDSS (V) 0 0 0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, V TH (V) 4