Preliminary Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS(on) P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 68 A IDM TC = 25°C, Pulse Width Limited by TJM - 200 A IA TC = 25°C - 68 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 568 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXTH) G International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages - 2.0 V - 4.0 VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 10 μA - 200 μA V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 z z z z z TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. - 200 D = Drain Tab = Drain z z VGS = 0V, ID = - 250μA D (Tab) Features z BVDSS S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 55 mΩ DS100370A(01/13) IXTT68P20T IXTH68P20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 90 S 33.4 nF 1300 pF 307 pF 63 ns 29 ns 115 ns 18 ns 380 nC 125 nC 70 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.22 °C/W RthJC RthCS TO-268 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = - 34A, -di/dt = -100A/μs VR = -100V, VGS = 0V - 68 A - 270 A -1.4 V 245 2.6 - 21.4 TO-247 Outline ns μC A 1 2 ∅P 3 e Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT68P20T IXTH68P20T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -70 -220 VGS = -10V - 7V - 6V -60 -180 -160 ID - Amperes -50 ID - Amperes VGS = -10V - 7V -200 -40 - 5V -30 -20 - 6V -140 -120 -100 -80 -60 - 5V -40 -10 -20 - 4V - 4V 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 -3.5 -5 -10 -15 -20 -25 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 34A Value vs. Junction Temperature 2.2 -70 VGS = -10V - 6V -60 VGS = -10V 2.0 R DS(on) - Normalized ID - Amperes 1.8 -50 - 5V -40 -30 -20 I D = - 68A 1.6 I D = - 34A 1.4 1.2 1.0 0.8 -10 - 4V 0.6 0.4 0 0 -1 -2 -3 -4 -5 -6 -50 -7 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 34A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -75 2.4 VGS = -10V 2.2 -65 TJ = 125ºC 2.0 -55 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 TJ = 25ºC -45 -35 -25 1.2 -15 1.0 -5 0.8 0 -20 -40 -60 -80 -100 -120 -140 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -160 -180 -200 -220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT68P20T IXTH68P20T Fig. 8. Transconductance Fig. 7. Input Admittance -110 180 -100 140 g f s - Siemens -80 ID - Amperes TJ = - 40ºC 160 -90 TJ = 125ºC 25ºC - 40ºC -70 -60 -50 -40 25ºC 120 100 125ºC 80 60 -30 40 -20 20 -10 0 0 -3 -3.5 -4 -4.5 -5 -5.5 0 -10 -20 -30 -40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -60 -70 -80 -90 -100 -110 Fig. 10. Gate Charge -220 -10 -200 -9 -180 -8 -160 VDS = -100V I D = - 34A I G = -1mA -7 -140 VGS - Volts IS - Amperes -50 ID - Amperes -120 -100 -80 TJ = 125ºC -60 -6 -5 -4 -3 TJ = 25ºC -40 -2 -20 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 0 -1.3 50 100 150 200 250 300 350 400 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 -1000 Ciss - 100 10,000 Coss 25µs RDS(on) Limit ID - Amperes Capacitance - PicoFarads f = 1 MHz 100µs 1ms - 10 1,000 TJ = 150ºC 10ms TC = 25ºC Single Pulse Crss DC 100ms -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -10 - 100 VDS - Volts - 1000 IXTT68P20T IXTH68P20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 50 60 RG = 1Ω, VGS = -10V RG = 1Ω, VGS = -10V VDS = -100V VDS = -100V 50 30 I D = - 68A I D = - 34A t r - Nanoseconds t r - Nanoseconds 40 40 TJ = 25ºC 30 TJ = 125ºC 20 20 10 10 25 35 45 55 65 75 85 95 105 115 125 -30 -35 -40 -45 TJ - Degrees Centigrade 240 240 200 TJ = 125ºC, VGS = -10V t r - Nanoseconds 120 I D = - 68A 80 80 I D = - 34A 40 4 5 6 7 8 9 I D = - 34A 100 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - 135 180 130 160 RG = 1Ω, VGS = -10V TJ = 125ºC 115 TJ = 25ºC 15 110 10 105 5 0 -35 -40 -45 -50 -55 -60 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -65 -70 t f - Nanoseconds 120 t d(off) - Nanoseconds 25 440 tf td(off) - - - - 400 TJ = 125ºC, VGS = -10V 140 125 90 125 360 VDS = -100V 120 320 I D = - 34A 100 280 80 240 I D = - 68A 60 200 40 160 100 20 120 95 0 80 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = -100V 30 t f - Nanoseconds 110 RG - Ohms 35 -30 I D = - 68A 20 25 10 40 20 120 10 0 3 I D = - 34A 25 15 40 0 130 VDS = -100V t d(off) - Nanoseconds 160 2 -70 td(off) - - - - RG = 1Ω, VGS = -10V 30 t d(on) - Nanoseconds 160 1 -65 140 tf VDS = -100V 120 -60 35 td(on) - - - - t f - Nanoseconds 200 -55 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr -50 ID - Amperes IXTT68P20T IXTH68P20T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_68P20T(A8)8-11-11