ON NLV74VHCT08ADTR2G Quad 2-input and gate Datasheet

MC74VHCT08A
Quad 2-Input AND Gate
The MC74VHCT08A is an advanced high speed CMOS 2−input
AND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5.0 V CMOS level output swings.
The VHCT08A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
•
•
•
High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Machine Model; > 200 V
Chip Complexity: 24 FETs or 6 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
MARKING
DIAGRAMS
14
SOIC−14
D SUFFIX
CASE 751A
1
1
VHCT08AG
AWLYWW
1
14
1
Features
•
•
•
•
•
•
•
•
•
•
www.onsemi.com
VHCT
08A
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
A
= Assembly Location
WL, L
= Wafer Lot
Y, YY
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
MC74VHCT08A/D
MC74VHCT08A
A1
B1
A2
B2
A3
B3
A4
B4
1
3
2
VCC
B4
A4
Y4
B3
A3
Y3
14
13
12
11
10
9
8
1
2
3
4
5
6
7
A1
B1
Y1
A2
B2
Y2
GND
Y1
4
6
5
Y2
Y = AB
9
8
10
Y3
12
11
13
(Top View)
Y4
Figure 2. Pinout: 14−Lead Packages
Figure 1. Logic Diagram
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
H
L
H
L
H
L
L
L
H
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating
DC Supply Voltage
Symbol
Value
Unit
VCC
–0.5 to +7.0
V
DC Input Voltage
Vin
–0.5 to +7.0
V
DC Output Voltage
Vout
–0.5 to VCC +0.5
V
Input Diode Current
IIK
−20
mA
Output Diode Current
IOK
±20
mA
DC Output Current, per Pin
Iout
±25
mA
DC Supply Current, VCC and GND Pins
ICC
±50
mA
Power Dissipation in Still Air, SOIC Packages†
TSSOP Package†
PD
500
450
mW
Storage Temperature
Tstg
–65 to +150
°C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating − SOIC Packages: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
DC Supply Voltage
VCC
4.5
5.5
V
DC Input Voltage
Vin
0
5.5
V
DC Output Voltage
Vout
0
VCC
V
Operating Temperature
TA
−40
+ 125
°C
Input Rise and Fall Time VCC = 5.0 V ±0.5 V
tr, tf
0
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
MC74VHCT08A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎ
ÎÎÎÎÎ
ÎÎÎ
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ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
TA = 25°C
VCC
(V)
Min
1.2
2.0
2.0
Typ
Minimum High−Level Input Voltage
VIH
3.0
4.5
5.5
Maximum Low−Level Input Voltage
VIL
3.0
4.5
5.5
VOH
3.0
4.5
2.9
4.4
3.0
4.5
2.58
3.94
Minimum High−Level Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = − 50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
Maximum Low−Level Output Voltage
VIN = VIH or VIL
VOL
VIN = VIH or VIL
IOL = 50 mA
TA ≤ 125°C
Min
Min
Max
1.2
2.0
2.0
0.53
0.8
0.8
3.0
4.5
3.0
4.5
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Max
TA ≤ 85°C
0.0
0.0
Max
1.2
2.0
2.0
V
0.53
0.8
0.8
0.53
0.8
0.8
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
VIN = 5.5 V or
GND
IIN
0 to 5.5
±0.1
±1.0
±1.0
mA
Maximum Quiescent Supply Current
VIN = VCC or GND
ICC
5.5
2.0
20
40
mA
Quiescent Supply Current
Input: VIN = 3.4 V
ICCT
5.5
1.35
1.50
1.65
mA
VOUT = 5.5 V
IOPD
0.0
0.5
5.0
10
mA
Maximum Input Leakage Current
Output Leakage Current
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA ≤ 85°C
TA = 25°C
Characteristic
Test Conditions
Symbol
Maximum Propagation Delay,
Input A or B to Y
VCC = 3.0 ± 0.3V CL = 15 pF
CL = 50 pF
tPLH,
tPHL
Min
VCC = 5.0 ± 0.5V CL = 15 pF
CL = 50 pF
Maximum Input Capacitance
Cin
CPD
Min
Max
TA ≤ 125°C
Typ
Max
Max
Unit
6.2
8.7
8.8
12.3
10.5
14.0
Max
14.0
17.5
ns
4.3
5.8
5.9
7.9
7.0
9.0
9.0
11.0
4
10
10
10
pF
Typical @ 25°C, VCC = 5.0V
20
Power Dissipation Capacitance (Note 1)
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.7
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50pF, VCC = 5.0 V)
TA = 25°C
Symbol
Typ
Max
Unit
Quiet Output Maximum Dynamic VOL
VOLP
0.3
0.8
V
Quiet Output Minimum Dynamic VOL
VOLV
−0.3
−0.8
V
Minimum High Level Dynamic Input Voltage
VIHD
3.5
V
Maximum Low Level Dynamic Input Voltage
VILD
1.5
V
Characteristic
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3
MC74VHCT08A
3.0V
A or B
1.5V
OUTPUT
DEVICE
UNDER
TEST
GND
tPLH
tPHL
TEST
POINT
CL*
VOH
Y
1.5V
*Includes all probe and jig capacitance
VOL
Figure 3. Switching Waveforms
Figure 4. Test Circuit
ORDERING INFORMATION
Package
Shipping†
MC74VHCT08ADR2G
SOIC−14
(Pb−Free)
2500 Units / Tape & Reel
MC74VHCT08ADTR2G
TSSOP−14
(Pb−Free)
2500 Units / Tape &Reel
NLV74VHCT08ADTR2G*
TSSOP−14
(Pb−Free)
2500 Units / Tape &Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74VHCT08A
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE K
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
b
0.25
M
C A
S
B
S
e
DETAIL A
h
A
X 45 _
M
A1
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
MC74VHCT08A
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
ÉÉÉ
K
A
−V−
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
MILLIMETERS
INCHES
DIM MIN
MAX
MIN MAX
A
4.90
5.10 0.193 0.200
B
4.30
4.50 0.169 0.177
C
−−−
1.20
−−− 0.047
D
0.05
0.15 0.002 0.006
F
0.50
0.75 0.020 0.030
G
0.65 BSC
0.026 BSC
H
0.50
0.60 0.020 0.024
J
0.09
0.20 0.004 0.008
J1
0.09
0.16 0.004 0.006
K
0.19
0.30 0.007 0.012
K1 0.19
0.25 0.007 0.010
L
6.40 BSC
0.252 BSC
M
0_
8_
0_
8_
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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MC74VHCT08A/D
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