Diodes DMN601VK 15 Dual n-channel enhancement mode field effect transistor Datasheet

DMN601VK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
SOT-563
ESD Protected up to 2kV
TOP VIEW
D2
G1
S1
S2
G2
D1
TOP VIEW
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN601VK-7
Notes:
Case
SOT-563
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-563
G1
D2
S1
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K7K YM
S2
Date Code Key
Year
Code
Month
Code
G2
D1
2005
2006
2007
2008
2009
2010
2011
2012
S
T
U
V
W
X
Y
Z
Jan
1
DMN601VK
Document number: DS30655 Rev. 5 - 2
Feb
2
Mar
3
Apr
4
May
5
Jun
6
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Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN601VK
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Continuous Pulsed (Note 6)
Units
V
V
ID
Value
60
±20
305
800
Symbol
Pd
RJA
Tj, TSTG
Value
250
500
-65 to +150
Units
mW
°C/W
°C
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Min
Typ
Max
Unit
BVDSS
IDSS
60








250
500
100
V
nA
1.0
1.6
2.5
V
2.0
3.0
Ω

1.4
ms
V
50
25
5.0
pF
pF
pF
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
RDS (ON)

|Yfs|
VSD

0.5


284

Ciss
Coss
Crss






nA
Test Condition
VGS = 0V, ID = 10µA
VDS = 50V, VGS = 0V
VGS = 10V, VDS = 0V
VGS = 5V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 25V, VGS = 0V
f = 1.0MHz
5. Device mounted on FR-4 PCB.
6. Pulse width 10S, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601VK
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ID, DRAIN CURRENT (A)
DMN601VK
VGS = 10V
8V
6V
5V
4V
3V
8V
6V
1.0
5V
0.8
4V
0.6
0.4
0.2
0
3V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
10
VDS = 10V
ID = 1mA
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
Pulsed
1.5
1
0.5
0
-50
-25
75 100 125
0
25
50
TCH, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
1
0.1
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
10
0
1
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601VK
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RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
IDR, REVERSE DRAIN CURRENT (A)
DMN601VK
VGS = 0V
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = 0°C
TA = -25°C
TA = -55°C
0
|Y fs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
TCH, CHANNEL TEMPERATURE ( °C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
VGS = 10V
TA= 25°C
Pulsed
VGS = 0V
VGS = 10V
Pulsed
TA = 25°C
TA = 150°C
TA = -55°C
TA = 85°C
1
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
DMN601VK
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DMN601VK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
B C
D
G
M
K
H
SOT-563
Dim Min
Max Typ
A
0.15
0.30 0.20
B
1.10
1.25 1.20
C
1.55
1.70 1.60
D
0.50
G
0.90
1.10 1.00
H
1.50
1.70 1.60
K
0.55
0.60 0.60
L
0.10
0.30 0.20
M
0.10
0.18 0.11
All Dimensions in mm
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
E
Z
E
C
G
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C
1.7
E
0.5
Y
X
DMN601VK
Document number: DS30655 Rev. 5 - 2
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DMN601VK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMN601VK
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