TI1 LM5060Q1MMX/NOPB High-side protection controller Datasheet

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LM5060
SNVS628G – OCTOBER 2009 – REVISED JANUARY 2016
LM5060 High-Side Protection Controller with Low Quiescent Current
1 Features
3 Description
•
•
The LM5060 high-side protection controller provides
intelligent control of a high-side N-channel MOSFET
during normal on/off transitions and fault conditions.
In-rush current is controlled by the nearly constant
rise time of the output voltage. A POWER GOOD
output indicates when the output voltage reaches the
input voltage and the MOSFET is fully on. Input
UVLO (with hysteresis) is provided as well as
programmable input OVP. An enable input provides
remote on or off control. The programmable UVLO
input can be used as second enable input for safety
redundancy. A single capacitor programs the initial
start-up VGS fault detection delay time, the transition
VDS fault detection delay time, and the continuous
over-current VDS fault detection delay time. When a
detected fault condition persists longer than the
allowed fault delay time, the MOSFET is latched off
until either the enable input or the UVLO input is
toggled low and then high.
1
•
•
•
•
•
•
•
•
•
•
•
Available in Automotive Grade / AEC Q-100
Wide Operating Input Voltage Range:
5.5 V to 65 V
Less than 15-µA Quiescent Current in Disabled
Mode
Controlled Output Rise Time for Safe Connection
of Capacitive Loads
Charge Pump Gate Driver for External N-Channel
MOSFET
Adjustable Undervoltage Lockout (UVLO) with
Hysteresis
UVLO Serves as Second Enable Input for
Systems Requiring Safety Redundancy
Programmable Fault Detection Delay Time
MOSFET Latched off After Load Fault is Detected
Active Low Open Drain POWER GOOD (nPGD)
Output
Adjustable Input Overvoltage Protection (OVP)
Immediate Restart After Overvoltage Shutdown
10-Lead VSSOP
Device Information(1)
PART NUMBER
PACKAGE
LM5060
VSSOP (10)
BODY SIZE (NOM)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
Automotive Body Electronics
Industrial Power Distribution and Control
Typical Application Circuit
VIN
VOUT
SENSE
GATE
OUT
VIN
LM5060
UVLO
OVP
STATUS
EN
GND
TIMER
High = Fault, Low= OK
nPGD
High = On, Low= Off
GND
EN
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5060
SNVS628G – OCTOBER 2009 – REVISED JANUARY 2016
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
5
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 12
7.4 Device Functional Modes........................................ 12
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 18
9 Power Supply Recommendations...................... 30
10 Layout................................................................... 31
10.1 Layout Guidelines ................................................. 31
10.2 Layout Example .................................................... 31
10.3 Thermal Considerations ........................................ 32
11 Device and Documentation Support ................. 33
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
33
33
33
33
33
12 Mechanical, Packaging, and Orderable
Information ........................................................... 33
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (April 2013) to Revision G
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Revision E (April 2013) to Revision F
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 27
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5 Pin Configuration and Functions
DGS Package
10-Pin VSSOP
Top View
VIN 2
OVP 3
UVLO 4
EN 5
10 GATE
LM5060Q1MM
SENSE 1
9 OUT
8 nPGD
7 TIMER
6 GND
Pin Functions
PIN
TYPE (1)
DESCRIPTION
NO.
NAME
1
SENSE
I
Input voltage sense: a constant current sink (16 μA typical) at the SENSE pin flows through an external
resistor to set the threshold for fault detection.
2
VIN
P
Supply voltage input: the operating voltage range is 5.5 V to 65 V. The internal power-on-reset (POR)
circuit typically switches to the active state when the VIN pin is greater than 5.1 V. A small ceramic
bypass capacitor close to this pin is recommended to suppress noise.
3
OVP
I
Over-voltage protection comparator input: an external resistor divider from the system input voltage sets
the Over-Voltage turn-off threshold. The GATE pin is pulled low when OVP exceeds the typical 2.0-V
threshold, but the controller is not latched off. Normal operation resumes when the OVP pin falls below
typically 1.76 V.
I
Under-voltage lock-out comparator input: the UVLO pin is used as an input under-voltage lock-out by
connecting this pin to a resistor divider between input supply voltage and ground. The UVLO comparator
is activated when EN is high. A voltage greater than typically 1.6 V at the UVLO pin will release the pull
down devices on the GATE pin and allow the output to gradually rise. A constant current sink (5.5 µA
typical) is provided to ensure the UVLO pin is low in an open circuit condition.
4
UVLO
5
EN
I
Enable input: a voltage less than 0.8 V on the EN pin switches the LM5060 to a low current shutdown
state. A voltage greater than 2.0 V on the EN pin enables the internal bias circuitry and the UVLO
comparator. The GATE pin pull-up bias is enabled when both EN and UVLO are in the high state. A
constant current sink (6 µA typical) is provided to ensure the EN pin is low in an open circuit condition.
6
GND
–
Circuit ground
7
TIMER
I/O
Timing capacitor: an external capacitor connected to this pin sets the VDS fault detection delay time. If the
TIMER pin exceeds the 2.0-V threshold condition, the LM5060 will latch off the MOSFET and remain off
until either the EN, UVLO or VIN (POR) input is toggled low and then high.
8
nPGD
O
Fault status: an open drain output. When the external MOSFET VDS decreases such that the OUT pin
voltage exceeds the SENSE pin voltage, the nPGD indicator is active (low = no fault).
9
OUT
I
Output voltage sense: connect to the output rail (external MOSFET source). Internally used to detect VDS
and VGS conditions.
10
GATE
O
Gate drive output: connect to the external MOSFET’s gate. A charge-pump driven constant current
source (24 µA typical) charges the GATE pin. An internal zener clamps the GATE pin at typically 16.8 V
above the OUT pin. The ΔV/Δt of the output voltage can be reduced by connecting a capacitor from the
GATE pin to ground.
(1)
I = Input, O = Output, P = Power
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
VIN to GND (3) (4)
SENSE, OUT to GND
(5)
MIN
MAX
UNIT
–0.3
75
V
–0.3
75
V
GATE to GND (3) (5)
–0.3
75
V
EN, UVLO to GND (4)
–0.3
75
V
nPGD, OVP to GND
–0.3
75
V
TIMER to GND
–0.3
7
V
260
°C
150
°C
150
°C
Peak reflow temperature
Operating junction temperature
Storage temperature, Tstg
(1)
(2)
(3)
(4)
(5)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
The GATE pin voltage is typically 12 V above the VIN pin when the LM5060 is enabled. Therefore, the Absolute Maximum Rating for
VIN (75 V) applies only when the LM5060 is disabled, or for a momentary surge to that voltage since the Absolute Maximum Rating for
the GATE pin is also 75 V.
The minimum voltage of –1 V is allowed if the current is limited to below –25 mA. Also it is assumed that the negative voltage on the
pins only occur during reverse battery condition when a positive supply voltage (Vin) is not applied.
The minimum voltage of –25 V is allowed if the current is limited to below –25 mA. Also it is assumed that the negative voltage on the
pins only occur during reverse battery condition when a positive supply voltage (VIN) is not applied.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Supply voltage
5.5
65
V
EN
Enable voltage
0
65
V
UVLO
Under-voltage lock-out voltage
0
65
V
POWER GOOD off voltage
0
65
V
0
5
mA
–40
125
°C
nPGD
TJ
4
POWER GOOD sink current
Operating junction temperature
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6.4 Thermal Information
LM5060
THERMAL METRIC (1)
DGS (VSSOP)
UNIT
10 PINS
RθJA
Junction-to-ambient thermal resistance
162.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
57.3
°C/W
RθJB
Junction-to-board thermal resistance
81.9
°C/W
ψJT
Junction-to-top characterization parameter
5.8
°C/W
ψJB
Junction-to-board characterization parameter
80.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
6.5 Electrical Characteristics
Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ =
25°C. Limits in standard type are for TJ = 25°C except where noted. Minimum and Maximum limits are ensured through test,
design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for
reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
VIN PIN
TJ = 25°C
IIN-EN
Input current, enabled mode
IIN-DIS
Input current, disabled mode
EN = 0.50 V
IIN-STB
Input current, standby mode
UVLO = 0.00 V
POREN
Power on reset threshold at
VIN
VIN rising
POREN-HYS
POREN hysteresis
VIN falling
IOUT-EN
OUT pin bias current, enabled
OUT = VIN, normal operation
IOUT-DIS
OUT pin leakage current,
disabled (1)
Disabled, OUT = 0 V, SENSE = VIN
ISENSE
Threshold programming
current
SENSE pin bias current
VOFFSET
VDS comparator offset voltage
SENSE - OUT voltage for
fault detection
IRATIO
ISENSE and IOUT-EN current ratio
ISENSE / IOUT-EN
1.4
TJ = –40°C to 125°C
1.7
TJ = 25°C
9
TJ = –40°C to 125°C
15
TJ = 25°C
0.56
TJ = –40°C to 125°C
0.80
TJ = 25°C
5.1
TJ = –40°C to 125°C
5.46
500
mA
µA
mA
V
mV
OUT PIN
TJ = 25°C
8
TJ = –40°C to 125°C
5.0
11.0
µA
μA
0
SENSE PIN
(1)
TJ = 25°C
16
TJ = –40°C to 125°C
13.6
TJ = 25°C
18.0
0
TJ = –40°C to 125°C
–7.0
TJ = 25°C
7.0
µA
mV
2.0
TJ = –40°C to 125°C
1.70
2.30
The GATE pin voltage is typically 12 V above the VIN pin when the LM5060 is enabled. Therefore, the Absolute Maximum Rating for
VIN (75 V) applies only when the LM5060 is disabled, or for a momentary surge to that voltage since the Absolute Maximum Rating for
the GATE pin is also 75 V.
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Electrical Characteristics (continued)
Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ =
25°C. Limits in standard type are for TJ = 25°C except where noted. Minimum and Maximum limits are ensured through test,
design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for
reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
OVP INPUT
OVPTH
OVP threshold
OVPHYS
OVP hysteresis
OVPDEL
OVP delay time
OVPBIAS
OVP pin threshold voltage rising
TJ = 25°C
TJ = –40°C to 125°C
2.0
1.88
Delay from OVP pin > OVPTH to GATE low
OVP pin bias current
OVP = 1.9 V
UVLOTH
UVLO threshold
UVLO pin threshold voltage rising
UVLOHYS
UVLO hysteresis
UVLOBIAS
UVLO pin pull-down current
TJ = 25°C
2.12
V
240
mV
9.6
µs
0
TJ = –40°C to 125°C
0.50
µA
UVLO INPUT
TJ = 25°C
TJ = –40°C to 125°C
1.6
1.45
TJ = 25°C
TJ = –40°C to 125°C
1.75
180
120
TJ = 25°C
230
5.5
TJ = –40°C to 125°C
3.8
2.00
7.2
V
mV
µA
EN INPUT
ENTHH
High-level input voltage
TJ = –40°C to 125°C
ENTHL
Low-level input voltage
TJ = –40°C to 125°C
ENHYS
EN threshold hysteresis
ENBIAS
EN pin pull-down current
V
0.80
200
TJ = 25°C
6
TJ = –40°C to 125°C
V
mV
8.0
µA
GATE CONTROL (GATE PIN)
TJ = 25°C
24
IGATE
Gate charge (sourcing) current,
On-state
on state
IGATE-OFF
Gate discharge (sinking)
current, off state
UVLO = 0.00 V
2.2
mA
IGATE-FLT
Gate discharge (sinking)
current, fault state
OUT < SENSE
80
mA
VGATE
Gate output voltage in normal
operation
GATE - VIN voltage
GATE pin open
TJ = 25°C
VGS status comparator
threshold voltage
GATE - OUT threshold voltage for
TIMER voltage reset and
TIMER current change
TJ = 25°C
VGATE-TH
VGATE-CLAMP
Zener clamp between GATE
pin and OUT pin
IGATE-CLAMP = 0.1 mA
6
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TJ = –40°C to 125°C
TJ = –40°C to 125°C
TJ = –40°C to 125°C
17
31
12
10
14
µA
V
5
3.50
6.50
16.8
V
V
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Electrical Characteristics (continued)
Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ =
25°C. Limits in standard type are for TJ = 25°C except where noted. Minimum and Maximum limits are ensured through test,
design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for
reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
TIMER (TIMER PIN)
VTMRH
Timer fault threshold
TIMER pin voltage rising
2.0
V
VTMRL
Timer re-enable threshold
TIMER pin voltage falling
0.30
V
Timer charge current for VDS
fault
TIMER charge current
after start-up
VGS = 6.5 V
TJ = 25°C
ITIMERH
Timer start-up charge current
TIMER charge current
during start-up
VGS = 3.5 V
TJ = 25°C
ITIMERL
ITIMERR
Timer reset discharge current
TIMER pin = 1.5 V
tFAULT
Fault to GATE low delay
TIMER pin > 2.0 V
No load on GATE pin
11
TJ = –40°C to 125°C
8.5
13.0
µA
6
TJ = –40°C to 125°C
4.0
TJ = 25°C
7.0
6
TJ = –40°C to 125°C
4.4
8.2
5
µA
mA
µs
POWER GOOD (nPGD PIN)
PGDVOL
Output low voltage
ISINK = 2 mA
PGDIOH
Off leakage current
VnPGD = 10 V
TJ = 25°C
80
TJ = –40°C to 125°C
TJ = 25°C
205
0.02
TJ = –40°C to 125°C
1.00
mV
µA
6.6 Typical Characteristics
Figure 1. VIN Pin Current vs VIN Pin Voltage
Figure 2. VGATE, VIN Voltage vs Input Voltage
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Typical Characteristics (continued)
8
Figure 3. OUT Pin Current (IOUT-EN) vs VIN Voltage
Figure 4. GATE Current (IGATE) vs VIN Voltage
Figure 5. SENSE Current (ISENSE) vs VIN Voltage
Figure 6. nPGD Low Voltage (PGDVOL vs Sink Current)
Figure 7. GATE Pull-Down Current Off (IGATE-OFF)
vs GATE Voltage
Figure 8. EN Threshold Voltage (ENTH) vs Temperature
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Typical Characteristics (continued)
Figure 9. UVLO Threshold Voltage (UVLOTH)
vs Temperature
Figure 10. GATE Pull-Down Current Fault (IGATE-FLT)
vs GATE Voltage
Figure 11. UVLO, EN Current vs Temperature
Figure 12. OVP Threshold (OVPTH), Hysteresis (OVPHYS)
vs Temperature
Figure 13. VGS Comparator Threshold Voltage (VGATE-TH)
vs Temperature
Figure 14. VDS Comparator Offset Voltage (VOFFSET)
vs Temperature
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Typical Characteristics (continued)
Figure 15. GATE Current (IGATE) vs Temperature
Figure 16. GATE Output Voltage (VGATE) vs Temperature
Figure 17. Gate Pull-Down Current - Fault (IGATE-FLT)
vs Temperature
Figure 18. VIN Pin Current (IEN) vs EN Voltage
Figure 19. nPGD Low Voltage (PGDVOL) vs Temperature
10
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7 Detailed Description
7.1 Overview
The LM5060 high-side protection controller features programmable current limit, turn on voltage, fault timer, and
overvoltage protection. It also has an enable input and POWER GOOD output.
7.2 Functional Block Diagram
GATE
OUT
LM5060
VIN
IGATE
24 PA
Charge
Pump
16.8V
1 k:
VGS Status
Comparator
IOUT-EN
8 PA
VGATE-TH
5V
Normal
OFF
OUT+5V
VDS Fault
Comparator
IGATE-OFF
2.2 mA
500:
SENSE
Fault
OFF
ISENSE
16 PA
IGATE-FLT
80 mA
nPGD
PGOOD
6 PA: Start-Up Fault Timer
11 PA: O-C (VDS) Fault Timer
One
shot
5 PA
OVP
6 PA
OV
OVPTH
2.0V
UVLOTH
1.6V
TIMER
UVLO
ITIMERR
6 mA
UVLOBIAS
5.5 PA
nEN
S
Q
Reset Latch
1.5V
R
EN
ENBIAS
6 PA
VTMRL
0.3V
Enable
Bias Circuit
Fault
GND
Q
S
Fault Latch
VTMRH
2.0V
R
VIN
POR
nEN + POR
POREN
5.1V
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7.3 Feature Description
The LM5060 is designed to drive an external high-side N-channel MOSFET. Over-Current protection is
implemented by sensing the voltage drop across the MOSFET. When an adjustable voltage drop threshold is
exceeded, and an adjustable time period has elapsed, the MOSFET is disabled. OVP and UVLO monitoring of
the input line is also provided. A low state on the enable pin will turn off the N-channel MOSFET and switch the
LM5060 into a very low quiescent current off state. An active low POWER GOOD output pin is provided to report
the status of the N-channel MOSFET. The waiting time before the MOSFET is turned off after a fault condition is
detected can be adjusted with an external timer capacitor. Since the LM5060 uses a constant current source to
charge the gate of the external N-channel MOSFET, the output voltage rise time can be adjusted by adding
external gate capacitance. This is useful when starting up into large capacitive loads.
7.4 Device Functional Modes
7.4.1 Power-Up Sequence
The basic application circuit is shown in Figure 20 and a normal start-up sequence is shown in Figure 21. Startup of the LM5060 is initiated when the EN pin is above the (ENTHH) threshold (2.0 V). At start-up, the timer
capacitor is charged with a 6-µA (typical) current source while the gate of the external N-channel MOSFET is
charged through the GATE pin by a 24-µA (typical) current source.
When the gate-to-source voltage (VGS) reaches the VGATE-TH threshold (typically 5 V) the VGS sequence ends, the
timer capacitor is quickly discharged to 0.3 V, and the 5-µA current source is enabled.
The timer capacitor will charge until either the VDS Comparator indicates that the drain-to-source voltage (VDS)
has been reduced to a nominal value (i.e. no fault) or the voltage on the timer capacitor has reached the VTMRH
threshold (i.e. fault). The VDS Comparator monitors the voltage difference between the SENSE pin and the OUT
pin. The SENSE pin voltage is user programmed to be lower than the input supply voltage by selecting a suitable
sense resistor value. When the OUT pin voltage exceeds the voltage at the SENSE pin, the nPGD pin is
asserted low (i.e. no fault) and the timer capacitor is discharged.
Q1
VIN
VOUT
RS
SENSE
GATE
OUT
VIN
R4
R10
LM5060
UVLO
R8
R11
R9
STATUS
EN
High = Fault, Low= OK
OVP
TIMER
C1
nPGD
GND
High = On, Low= Off
EN
GND
GND
Figure 20. Basic Application Circuit
7.4.2 Status Conditions
Output responses of the LM5060 to various input conditions is shown in Table 1. The input parameters include
Enable (EN), UVLO, OVP, input voltage (VIN), Start-Up Fault (VGS) and Run Fault (VDS) conditions. The output
responses are the VIN pin current consumption, the GATE charge current, the TIMER capacitor charge (or
discharge) current, the GATE discharge current if the timer capacitor voltage has reached the VTMRH threshold
(typically 2 V), as well as the status of nPGD.
12
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Device Functional Modes (continued)
VTMRH
VTIMER
6 PA
VTMRL
VGATE-TH
VGS
transition region
nPGD
OK
VGS < 5 V
VGS Status
EN
OFF
VGS > 5 V
ON
Figure 21. Voltages During Normal Start Up Sequence
Table 1. Overview of Operating Conditions
INPUTS
OUTPUTS
UVLO
OVP
(typ)
VIN
(typ)
SENSE-OUT
GATE
-OUT
VIN
Current
(typ)
GATE Current
(typ)
TIMER
GATE after
TIMER > 2 V
nPGD
L
L
–
>5.10 V
–
–
0.009 mA
2.2 mA sink
Low
–
–
Disabled
L
H
–
>5.10 V
–
–
0.009 mA
2.2 mA sink
Low
–
–
Disabled
EN
H
L
<2 V
>5.10 V
H
L
>2 V
>5.10 V
H
H
<2 V
>5.10 V
H
H
<2 V
>5.10 V
SENSE>OUT
SENSE<OUT
SENSE>OUT
SENSE<OUT
SENSE>OUT
SENSE<OUT
SENSE>OUT
–
0.56 mA
2.2 mA sink
Low
–
–
0.56 mA
80 mA sink
Low
–
<5 V
1.4 mA
24-µA source
6-µA source
80 mA sink
H
Low
–
L
>5 V
1.4 mA
24-µA source
11-µA
source
80 mA sink
H
Low
–
L
SENSE<OUT
H
H
>2 V
>5.10 V
H
H
<2 V
<5.10 V
(1)
SENSE>OUT
SENSE<OUT
–
H
–
1.4 mA
80 mA sink
Low
–
–
1.4 mA
2.2 mA sink
(see (1))
Low
–
L
H
L
H
L
H
STATUS
Standby
Standby
Enabled
Enabled
Overvoltage
Power on
reset
The 2.2 mA sink current is valid for with the VIN pin ≥ 5.1 V. When the VIN pin < 5.1 V the sink current is lower. See ‘GATE Pin Off
Current vs. VIN’ plot in Typical Characteristics.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Gate Control
A charge pump provides bias voltage above the input and output voltage to enhance the N-channel MOSFET
gate. When the system voltage is initially applied and both EN and UVLO are above their respective thresholds,
the GATE pin is charged by the 24-µA (typical) current source. During normal operating conditions, the GATE pin
voltage is clamped to approximately 16.8 V above the OUT pin (i.e. VGS) by an internal zener.
When either the UVLO input or the EN input is low, or when VIN is below the Power-On Reset voltage of 5.10 V
(typical), the GATE pin is discharged with a 2.2 mA (typical) current sink.
When the timer capacitor is charged up to the VTMRH threshold (typically 2 V) a fault condition is indicated and
the gate of the external N-Channel MOSFET is discharged at a 80 mA (typical) rate. Additionally, when the OVP
pin voltage is higher than the OVPTH threshold (typically 2 V) a fault is indicated and the gate of the external NChannel MOSFET is discharged at the same 80 mA (typical) rate.
8.1.2 Fault Timer
An external capacitor connected from the TIMER pin to the GND pin sets the fault detection delay time. If the
voltage on the TIMER capacitor reaches the VTMRH threshold (2 V typical) a fault condition is indicated. The
LM5060 will latch off the MOSFET by discharging the GATE pin at a 80 mA (typical) rate, and will remain latched
off until either the EN pin, the UVLO pin, or the VIN pin is toggled low and then high.
There are three relevant components to the TIMER pin’s function:
1. A constant 6-µA (typical) current source driving the TIMER pin. This current source is active when EN,
UVLO, and VIN are all high.
2. A second current source (5 µA typical) is activated, for a total charge current of 11 µA (typical), only when
the VGS sequence has completed successfully.
3. A pull-down current sink for the TIMER pin which resets the timer by discharging the timer capacitor. If EN,
UVLO or VIN is low, or when OVP is high, the timer capacitor is discharged.
(a) When the VDS Fault Comparator detects a fault, (SENSE pin voltage higher than OUT pin voltage) the
timer capacitor pull down is disabled and the timer capacitor is allowed to charge at the 11-µA (typical)
rate.
During Start-Up, the timer behaves as follows:
After applying sufficient system voltage and enabling the LM5060 by pulling the EN and UVLO pins high, the
timer capacitor will be charged with a 6-µA (typical) current source. The timer capacitor is discharged when the
voltage difference between the GATE pin and the OUT pin (i.e. VGS of the external N-Channel MOSFET)
reaches the VGATE-TH threshold (typically 5 V). After discharging, the timer capacitor is charged with 11 µA until
either the VTMRH threshold (typically 2 V) is reached, or the sensed VDS voltage falls below the threshold of the
VDS Fault Comparator, indicating the output voltage has reached the desired steady state level. The timer
capacitor voltage waveforms are illustrated in Figure 21, Figure 22, and Figure 23.
A timer capacitor is always necessary to allow some finite amount of time for the gate to charge and the output
voltage to rise during startup. If an adequate timer capacitor value is not used, then the 6 µA of charge current
would cause the TIMER pin voltage to reach the VTMRH fault threshold (typically 2 V) prematurely and the
LM5060 will latch off since a fault condition would have been indicated.
14
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Application Information (continued)
Although not recommended, the timer function can be disabled by connecting the TIMER pin directly to GND.
With this condition the TIMER pin voltage will never reach the VTMRH fault threshold (2 V typical). The end result
is that the fault latch-off protection is completely disabled, while the nPGD pin will continue to reflect the VDS
Fault Comparator output.
8.1.3 VGS Considerations
The VGS Status Comparator accomplishes two purposes:
1. As the gate of the external MOSFET is charged, the VGS voltage transitions from cut-off, through an active
region, and into the ohmic region. The LM5060 provides two fault timer modes to monitor these transitions.
The TIMER pin capacitor is initially charged with a constant 6 µA (typical) until either the MOSFET VGS
reaches the VGATE–TH threshold (typically 5 V) indicating that the MOSFET channel is at least somewhat
enhanced, or the voltage on the TIMER pin reaches the VTMRH threshold (typically 2 V) indicating a fault
condition. If the MOSFET VGS reaches 5-V threshold before the TIMER pin reaches the typical 2 V timer fault
threshold, the timer capacitor is then discharged to 300 mV, and then begins charging with 11-µA current
source while the MOSFET transitions through the active region. The lower timer capacitor charge current
during the initial start-up sequence allows more time before a fault is indicated. The turn-on time of the
MOSFET will vary with input voltage, load capacitance, load resistance, as well as the MOSFET
characteristics.
2. Figure 22 shows a start-up waveform with excessive gate leakage. The initial charge current on the timer
capacitor is 6 µA (typical), while the simultaneous charge current to the gate is 24 µA (typical). Due to
excessive gate leakage, the 24 µA is not able to charge the gate to the required typical 5 V VGS threshold
and the VDS Fault Comparator will indicate a fault when the timer capacitor is charged to the VTMRH fault
threshold. When the timer capacitor voltage reaches theVTMRH fault threshold (typically 2 V) the MOSFET
gate is discharged at an 80 mA (typical) rate.
VTRMRH
VTIMER
6 PA
Fault Latch
VTRMRL
GATE pin will be
discharged to GND
at 80 mA rate
VGATE-TH
VGS
nPGD
Fault
VGS < 5V
VGS Status
EN
OFF
ON
Figure 22. Voltages During Startup With VGS Gate Leakage Condition
8.1.4 VDS Fault Condition
The LM5060 includes a VDS Fault Comparator that senses the voltage difference between the SENSE pin and
the OUT pin. If the voltage at the OUT pin falls lower than the voltage at the SENSE pin, the VDS Fault
Comparator will trip and switch the nPGD pin to a high impedance state. It will also initiate charging of the
capacitor on the TIMER pin with a 6-µA (typical) current source if VGS is less than than 5-V, or a 11-µA (typical)
current source if VGS is higher than 5 V. If the voltage on the TIMER pin reaches the typical 2 V fault threshold,
the gate of the N-Channel MOSFET is pulled low with a 80 mA (typical) sink current. Figure 23 illustrates a VDS
fault condition during start-up. The nPGD pin never switches low because the VDS fault comparator detects
excessive VDS voltage throughout the entire sequence.
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Application Information (continued)
8.1.5 Overcurrent Fault
The VDS Fault Comparator can be used to implement an Over-Current shutdown function. The VDS Fault
Comparator monitors the voltage difference between the SENSE pin and the OUT pin. This is, essentially, the
same voltage that is across the N-Channel MOSFET RDS(ON) less the threshold voltage that is set by the series
resistor on the SENSE pin. The value of capacitor on the TIMER pin, the capacitor charge current (ITIMERH, 11 μA
typical), along with the TIMER pin fault threshold (VTMRH) will determine the how long the N-Channel MOSFET
will be allowed to conduct excessive current before the MOSFET is turned-off. When this delay time expires, the
gate is discharged at a 80 mA rate.
The LM5060 is intended for applications where precise current sensing is not required, but some level of fault
protection is needed. Examples are applications where inductance or impedance in the power path limits the
current rise in a short circuit condition.
The Safe Operating Area (SOA) of the external N-Channel MOSFET should be carefully considered to ensure
the peak drain-to-source current and the duration of the fault delay time is within the SOA rating of the MOSFET.
Also note that the RDS(ON) variations of the external N-Channel MOSFET will affect the accuracy of the OverCurrent detection.
8.1.6 Restart After Overcurrent Fault Event
When a VDS fault condition has occurred and the TIMER pin voltage has reached 2 V, the LM5060 latches off the
external MOSFET. In order to initiate a restart, either the EN pin, the VINpin, or the UVLO pin must be toggled
low and then high.
VTMRH
11 PA
6 PA
VTIMER
Fault Latch
VTMRL
GATE pin will be
discharged to GND
at 80 mA rate
VGS = 5V
VGS
VGATE-TH
transition region
nPGD
Fault
VGS < 5V
VGS Status
EN
OFF
VGS > 5V
ON
Figure 23. Voltages During Startup with VDS Fault Condition
8.1.7 Enable
The LM5060 Enable pin (EN) allows for remote On/Off control. The Enable pin on/off thresholds are CMOS
compatible. The external N-Channel MOSFET can be remotely switched Off by forcing the EN pin below the
lower input threshold, ENTHL (800 mV). The external N-Channel MOSFET can be remotely switched On by
forcing the EN pin above the upper input threshold, ENTHH (2.00 V). Figure 24 shows the threshold levels of the
Enable pin.
When the EN pin is less than 0.5 V (typical) the LM5060 enters a low current (disabled) state. The current
consumption of the VIN pin in this condition is 9 µA (typical).
16
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Application Information (continued)
up to 65V
ON
2.0V (ENTHH)
1.5V (typical)
200 mV (hysterisis)
0.8V (ENTHL)
0.5V (disabled)
OFF
disabled
Figure 24. Enable Function Threshold Levels
8.1.8 UVLO
The UVLO function will turn off the external N-Channel MOSFET with a 2.2 mA (typical) current sink at the GATE
pin. Figure 25 shows the threshold levels of the UVLO input. A resistor divider as shown in Figure 20 with R10
and R11 sets the voltage at which the UVLO function engages. The UVLO pin may also be used as a second
enable pin for applications requiring a redundant, or secondary, shut-down control. Unlike the EN pin function,
the UVLO function does not switch the LM5060 to the low current (disabled) state.
If the UVLO function is not needed, the UVLO pin should be connected to the VIN pin. The UVLO pin should not
be left floating as the internal pull-down will keep the UVLO active.
In addition to the programmable UVLO function, an internal Power-On-Reset (POR) monitors the voltage at the
VIN pin and turns the MOSFET Off when VIN falls below typically 5.10 V.
up to 65V
OK
1.6V (UVLOTH)
180 mV (hysterisis)
UVLO
Figure 25. UVLO Threshold Levels
8.1.9 OVP
The OVP function will turn off the external N-Channel MOSFET if the OVP pin voltage is higher than the OVPTH
threshold (typically 2 V). A resistor divider made up with R8 and R9, shown in Figure 20, sets the OVP threshold.
An internal 9.6-µs timer filters the output of the over-voltage comparator to prevent noise from triggering an OVP
event. An OVP event lasting longer than typically 9.6 µs will cause the GATE pin to be discharged with an 80 mA
current sink and will cause the capacitor on the TIMER pin to be discharged.
If the OVP function is not needed, the OVP pin should be connected to GND. The OVP pin should not be left
floating.
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Application Information (continued)
8.1.10 Restart After OVP Event
After the OVP function has been activated and the gate of the external N-Channel MOSFET has been pulled low,
the OUT pin is likely to be low as well. However, an OVP condition will not cause the VDS Fault Comparator to
latch off of the LM5060 because the capacitor on the TIMER pin is also discharged during an OVP event. After
the OVP pin falls below the lower threshold (typically 1.76 V), the LM5060 will re-start as described in the normal
start-up sequence and shown in Figure 21. The EN, VIN, or UVLO pins do not need to be toggled low to high to
re-enable the MOSFET after an OVP event.
8.1.11 nPGD Pin
The nPGD pin is an open drain connection that indicates when a VDS fault condition has occurred. If the SENSE
pin voltage is higher than the OUT pin voltage the state of the nPGD pin will be high impedance. In the typical
application, as shown in Figure 20, the voltage at the nPGD pin will be high during any VDS fault condition. The
nPGD state is independent of the fault timer function. The resistance R4 should be selected large enough to
safely limit the current into the nPGD pin. Limiting the nPGD low state current below 5 mA is recommended.
8.2 Typical Applications
Three application examples are provided. Example Number 1: LM5060EVAL Design illustrates the process for
the LM5060EVAL in Related Documentation. Example Number 2: Reverse Polarity Protection With Diodes and
Example Number 3: Reverse Polarity Protection With Resistor illustrate two other applications that provide
additional protection features.
8.2.1 Example Number 1: LM5060EVAL Design
Figure 26 shows the schematic for the LM5060EVAL in Related Documentation. Design example number 1
illustrates the basic design procedure used for the evaluation module.
Q1
INPUT
R4
9.09 k
1
SENSE
+
R6
100 k
STATUS
EN
D1
51V
C4
22 µF
High = Fault, Low= OK
High = On, Low= Off
OUTPUT
R5
0.0
C3
10
GATE
9
OUT
2 VIN
R1
200 k
C2
0.1 µF
+ C5
22 µF
LM5060
R2
38.3 k
4 UVLO
R3
14.0 k
3 OVP
8 nPGD
TIMER 7
C1
0.1 µF
GND 6
5 EN
GND
GND
Figure 26. SNVA413 Schematic Diagram
8.2.1.1 Design Requirements
Example number 1 design requirements are shown in Table 2.
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Table 2. Example Number 1 Circuit Specifications
DESIGN PARAMETER
EXAMPLE VALUE
Maximum input voltage (OVP)
37 V
Minimum input voltage (UVLO)
9V
Output current range
0 A to 5.0 A
Ambient temperature range
0°C to 50°C
8.2.1.2 Detailed Design Procedure
8.2.1.2.1 VDS Fault Detection and Selecting Sense Pin Resistor RS
The LM5060 monitors the VDS voltage of the external N-Channel MOSFET. The drain to source voltage threshold
(VDSTH), which is set with the resistor RS, is shown in Figure 27;
VDSTH = (RS x ISENSE) - VOFFSET
(1)
The MOSFET drain to source current threshold is:
IDSTH =
VDSTH
RDS(ON)
where
•
•
•
RDS(ON) is the resistive drop of the pass element Q1 in Figure 27
VOFFSET is the offset voltage of the VDS comparator
ISENSE (16 µA typical) is the threshold programming current
VIN
(2)
VOUT
Q1
RS
SENSE
GATE
OUT
VIN
LM5060
Figure 27. Setting the VDS Threshold
8.2.1.2.2 Turn-On Time
To slow down the output rise time a capacitor from the GATE pin to GND may be added. The turn on time
depends on the threshold level of the N-Channel MOSFET, the gate capacitance of the MOSFET as well as the
optional capacitance from the GATE pin to GND. Figure 28 shows the slow down capacitor C1. Reducing the
turn-on time allows the MOSFET (Q1), to slowly charge a large load capacitance. Special care must be taken to
keep the MOSFET within its safe operating area. If the MOSFET turns on too slow, the peak power losses may
damage the device.
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VIN
VOUT
Q1
C1
RS
SENSE
GATE
OUT
VIN
LM5060
Figure 28. Turn-On Time Extension
8.2.1.2.3 Fault Detection Delay Time
To allow the gate of the MOSFET adequate time to change, and to allow the MOSFET to conduct currents
beyond the protection threshold for a brief period of time, a fault delay timer function is provided. This feature is
important when drive loads which require a surge of current in excess of the normal ON current upon start up, or
at any point in time, such as lamps and motors. A single low leakage capacitor (CTIMER) connected from the
TIMER (pin 7), to ground sets the delay time interval for both the VGS status detection at start-up and for the
subsequent VDS Over-Current fault detection.
When the LM5060 is enabled under normal operating conditions the timer capacitor will begin charging at a 6 μA
(typical) rate while simultaneously charging the gate of the external MOSFET at a 24 μA (typical) rate. The gateto-source voltage (VGS) of the external MOSFET is expected to reach the 5-V (typical) threshold before the timer
capacitor has charged to the VTMRH threshold (2 V typical) in order to avoid being shutdown.
While VGS is less than the typical 5-V threshold (VGATE-TH), the VDS start-up fault delay time is calculated from:
VDS Fault Delay =
VTIMERH x CTIMER
ITIMERL
where
•
ITMRL is typically 6 μA and VTMRH is typically 2 V
(3)
If the CTIMER value is 68 nF (0.068μF) the VGS start-up fault delay time would typically be:
VDS Fault Delay = ((2 V x 0.068 μF) / 6 μA) = 23 ms
(4)
When the LM5060 has successfully completed the start-up sequence by reaching a VGS of 5 V within the fault
delay time set by the timer capacitor (CTIMER), the capacitor is quickly discharged to 300 mV (typical) and the
charge current is increased to 11 μA (typical) while the gate of the external MOSFET is continued to be charge at
a 24 μA (typical) rate. The external MOSFET may not be fully enhanced at this point in time and some additional
time may be needed to allow the gate-to-source voltage (VGS) to charge to a higher value. The drain-to-source
voltage (VDS) of the external MOSFET must fall below the VDSTH threshold set by RS and ISENSE before the timer
capacitor has charged to the VTMRH threshold (2 V typical) to avoid a fault.
When VGS is greater than the typical 5-V threshold (VGATE-TH), the VDS transition fault delay time is calculated
from:
VDS Fault Delay =
(VTIMERH - VTMRL) x CTIMER
ITIMERH
where
•
•
•
ITMRH is typically 11 μA
VTMRH is typically 2 V
VTMRL is typically 300 mV
(5)
If the CTIMER value is 68 nF(0.068 μF) the VDS transition fault delay time would typically be:
VDS Fault Delay = (((2 V–0.3 V) x 0.068 μF) / 11 μA) = 10 ms
20
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Should a subsequent load current surge trip the VDS Fault Comparator, the timer capacitor discharge transistor
turns OFF and the 11 μA (typical) current source begins linearly charging the timer capacitor. If the surge current,
with the detected excessive VDS voltage, lasts long enough for the timer capacitor to charge to the timing
comparator threshold (VTMRH) of typically 2 V, the LM5060 will immediately discharge the MOSFET gate and
latch the MOSFET off. The VDS fault delay time during an Over-Current event is calculated from:
VDS Fault Delay =
VTIMERH x CTIMER
ITIMERH
where
•
•
ITMRH is typically 11 μA
VTMRH is typically 2 V
(7)
If the CTIMER value is 68 nF(0.068 μF) the VDS Over-Current fault delay time would typically be:
VDS Fault Delay = ((2 V x 0.068 μF) / 11 μA) = 12 ms
(8)
Since a single capacitor is used to set the delay time for multiple fault conditions, it is likely that some
compromise will need to be made between a desired delay time and a practical delay time.
8.2.1.2.4 MOSFET Selection
The external MOSFET (Q1) selection should be based on the following criteria:
• The BVDSS rating must be greater than the maximum system voltage (VIN), plus ringing and transients which
can occur at VIN when the circuit is powered on or off.
• The maximum transient current rating should be based on the maximum worst case VDS fault current level.
• MOSFETs with low threshold voltages offer the advantage that during turn on they are more likely to remain
within their safe operating area (SOA) because the MOSFET reaches the ohmic region sooner for a given
gate capacitance.
• The safe operating area (SOA) of the MOSFET device and the thermal properties should be considered
relative to the maximum power dissipation possible during startup or shutdown.
• RDS(ON) should be sufficiently low that the power dissipation at maximum load current ((IL(MAX))2 x RDS(ON))
does not increase the junction temperature above the manufacturer’s recommendation.
• If the device chosen for Q1 has a maximum VGS rating less than 16 V, an external zener diode must be
added from gate to source to limit the applied gate voltage. The external zener diode forward current rating
should be at least 80 mA to conduct the full gate pull-down current during fault conditions.
8.2.1.2.5 Input and Output Capacitors
Input and output capacitors are not necessary in all applications. Any current that the external MOSFET conducts
in the on-state will decrease very quickly as the MOSFET turns off. All trace inductances in the design including
wires and printed circuit board traces will cause inductive voltage kicks during the fast termination of a
conducting current. On the input side of the LM5060 circuit this inductive kick can cause large positive voltage
spikes, while on the output side, negative voltage spikes are generated. To limit such voltage spikes, local
capacitance or clamp circuits can be used. The necessary capacitor value depends on the steady state input
voltage level, the level of current running through the MOSFET, the inductance of circuit board traces as well as
the transition speed of the MOSFET.
Since the exact amount of trace inductance is hard to predict, careful evaluation of the circuit board is the best
method to optimize the input or output capacitance or clamp circuits.
8.2.1.2.6 UVLO, OVP
The UVLO and OVP thresholds are programmed to enable the external MOSFET (Q1) when the input supply
voltage is within the desired operating range. If the supply voltage is low enough that the voltage at the UVLO pin
is below the UVLO threshold, Q1 is switched off by a 2.2 mA (typical) current sink at the GATE pin, denying
power to the load. The UVLO threshold has approximately 180 mV of hysteresis.
If the supply voltage is high enough that the voltage at the OVP pin is above the OVP threshold, the GATE pin is
pulled low with a 80 mA current sink. Hysteresis is provided for each threshold. The OVP threshold has
approximately 240 mV of hysteresis.
Option A: The configuration shown in Figure 29 requires three resistors (R1, R2, and R3) to set the thresholds.
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VIN
VIN
LM5060
R1
UVLOTH
1.60V
UVLO
UVLOBIAS
5.5 PA
R2
OVP
OVPTH
2.00V
R3
Figure 29. UVLO and OVP Thresholds Set by R1, R2 and R3
The procedure to calculate the resistor values is as follows:
1. Select R1 based on current consumption allowed in the resistor divider, including UVLOBIAS, and
consideration of noise sensitivity. A value less than 100 kΩ is recommended, with lower values providing
improved immunity to variations in ULVOBIAS.
2. Calculate R3 with the following formula:
UVLOTH x R1
R3 =
+ R1
VINMIN - UVLOTH - (UVLOBIAS x R1)
VINMAX UVLOBIAS x R1
OVPTH
OVPTH
(9)
3. Calculate R2 with the following formula:
R2 =
UVLOBIAS x R1 x R3
R3 x VINMAX
- R3 - R1 OVPTH
OVPTH
(10)
VINMIN is the minimum and VINMAX is the maximum input voltage of the design specification. All other variables
can be found in the Electrical Characteristics table of this document. To calculate the UVLO lower threshold
including its hysteresis for falling VIN, use (UVLOTH-UVLOHYS) instead of UVLOTH in the formulas above. To
calculate the OVP lower threshold including hysteresis for falling VIN, use (OVPTH-OVPHYS) instead of OVPTH.
With three given resistors R1, R2, and R3, the thresholds can be calculated with the formulas below:
VINMAX = R1 x
VINMIN =
OVPTH
R3
UVLOTH
R2 + R3
+ UVLOBIAS + R2 x
OVPTH
R3
+ OVPTH
+ UVLOBIAS x R1 + UVLOTH
(11)
Also in these two formulas, the respective lower threshold value including the hysteresis is calculated by using
(UVLOTH-UVLOHYS) instead of UVLOTH, and (OVPTH-OVPHYS) instead of OVPTH. The worst case thresholds,
over the operating temperature range, can be calculated using the respective min and max values in bold font in
the Electrical Characteristics.
Option B: UVLO and OVP can be independently adjusted using two resistor dividers as shown in Figure 30.
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VIN
VIN
LM5060
R10
UVLO
R8
UVLOTH
1.60V
UVLOBIAS
5.5 PA
R11
OVP
OVPTH
2.00V
R9
Figure 30. Programming the Thresholds with Resistors R8-R11
Choose the upper UVLO thresholds to ensure operation down to the lowest required operating input voltage
(VINMIN). Select R11 based on resistive divider current consumption and noise sensitivity. A value less than 100
kΩ is recommended, with lower values providing improved immunity to variations in ULVOBIAS.
R10 =
VINMIN - UVLOTH
UVLOBIAS +
UVLOTH
R11
(12)
To calculate the UVLO low threshold including its hysteresis, use (UVLOTH-UVLOHYS) instead of UVLOTH in the
formula above. Choose the lower OVP threshold to ensure operation up to the highest VIN voltage required
(VINMAX). Select R9 based on resistive divider current consumption A value less than 100 kΩ is recommended.
R8 = R9 x
VINMAX - OVPTH
OVPTH
(13)
To calculate the OVP low threshold including hysteresis, use (OVPTH-OVPHYS) instead of OVPTH. Where the R9R11 resistor values are known, the threshold voltages are calculated from the following:
VINMAX = OVPTH +
R8 x OVPTH
R9
VINMIN = UVLOTH + R10 x UVLOBIAS +
UVLOTH
R11
(14)
Also in these two formulas, the respective low value including the threshold hysteresis is calculated by using
(UVLOTH-UVLOHYS) instead of UVLOTH and (OVPTH-OVPHYS) instead of OVPTH. The worst case thresholds, over
the operating temperature range, can be calculated using the respective minimum and maximum values in bold
font in the Electrical Characteristics.
Option C: The OVP function can be disabled by grounding the OVP pin. The UVLO thresholds are set as
described in Figure 30.
8.2.1.2.7 POWER GOOD Indicator
A resistor between a supply voltage and the nPGD pin limits the current into the nPGD pin in a logic low
condition. A nPGD pin sink current in the range of 1 mA to 5 mA is recommended. The example in Figure 31
connects the nPGD pull-up resistor R4 to the VIN pin. Any positive supply voltage less than 65 V may be used
instead of VIN.
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VIN
LM5060
R4
nPGD
Status
VDS fault signal
GND
Figure 31. Circuitry at the nPGD Pin
8.2.1.2.8 Input Bypass Capacitor
Some input capacitance from the VIN pin to the GND pin may be necessary to filter noise and voltage spikes
from the VIN rail. If the current through Q1 in Figure 20 is very large a sudden shutdown of Q1 will cause an
inductive kick across the line input and pc board trace inductance which could damage the LM5060. In order to
protect the VIN pin as well as SENSE, OVP, UVLO, and nPGD pins from harm, a larger bulk capacitor from VIN
to GND may be needed to reduce the amplitude of the voltage spikes. Protection diodes or surge suppressors
may also be used to limit the exposure of the LM5060 pins to voltages below their maximum operating ratings.
8.2.1.2.9 Large Load Capacitance
Figure 32 shows an application with a large load capacitance CL. Assume a worst case turn off scenario where
Vin remains at the same voltage as CL and RL is a high impedance. The body diode of Q1 will not conduct any
current and all the charge on CL is dissipated through the LM5060 internal circuitry. The dotted line in Figure 32
shows the path of this current flow. Initially the power dissipated by the LM5060 is calculated with the formula:
P = IGATE-FLT x VOUT
where
•
IGATE-FLT is the sink current of the LM5060 gate control
(15)
In applications with a high input voltage and very large output capacitance, the discharge current can be limited
by an additional discharge resistor RO in series with the OUT pin as shown in Figure 33. This resistor will
influence the current limit threshold, so the value of RS will need to be readjusted.
VIN
VOUT
Q1
CL
RL
RS
GATE
SENSE
OUT
Fault
OFF
IGATE-FLT
80 mA
GND
LM5060
Figure 32. Discharge Path of Possible Load Capacitor
In applications exposed to reverse polarity on the input and a large load capacitance on the output, a current
limiting resistor in series with the OUT pin is required to protect the LM5060 OUT pin from reverse currents
exceeding 25 mA. Figure 33 shows the resistor RO in the trace to the OUT pin.
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VIN
VOUT
Q1
CL
RS
RL
RO
GATE
SENSE
OUT
Fault
OFF
IGATE-FLT
80 mA
GND
LM5060
Figure 33. Current Limiting Resistor RO for Special Cases
If a RO resistor in the OUT path is used, the current sensing will become less accurate since RO has some
variability as well as the current into the OUT pin. The OUT pin current is specified in the Electrical
Characteristics section as IOUT-EN. A RO resistor design compromise for protection of the OUT pin and a
maintaining VDS sensing accuracy can be achieved. See the Reverse Polarity Protection With a Resistor section
for more details on how to calculate a reasonable RO value.
8.2.1.3 Application Curves
Figure 34. Start-Up Waveform
Figure 35. Start-Up Waveform
Figure 36. OVP Behavior
Figure 37. RS vs IDSTH for RDS(ON) = 25 mΩ
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Figure 38. Fault Behavior
8.2.2 Example Number 2: Reverse Polarity Protection With Diodes
Status
Q1
75A, 40V
D7
Q2
75A, 40V
VOUT
VIN
R4
10 k:
R3
12 k:
D3
36V
R5
49.9 k:
D1
SENSE
UVLO
R6
5.62 k:
R7
5.11 k:
Enable
C2
100 nF
D6
GATE
LM5060
OVP
EN
R1
2 k:
nPGD
VIN
D2
Q3
0.6A, 40V
D4
D5
OUT
GND
TIMER
C1
68 nF
R2
10 k:
GND
GND
Figure 39. Application with Reverse Polarity Protection with Diodes for OUT Pin Protection
Figure 39 shows the LM5060 in an automotive application with reverse polarity protection. The second N-channel
MOSFET Q2 is used to prevent the body diode of Q1 from conducting in a reverse VIN polarity situation. The
zener diode D3 is used to limit VIN voltage transients which will occur when Q1 and Q2 are shut off quickly. In
some applications the inductive kick is handled by input capacitors and D3 can be omitted. In reverse polarity
protected applications, the input capacitors will see the reverse voltage. To avoid stressing input capacitors with
reverse polarity, a transorb circuit implemented with D3 and D2 may be used. Diode D1 in Figure 39 protects the
VIN pin in the event of reverse polarity. The resistor R1 protects the GATE pin from reverse currents exceeding
25 mA in the reverse polarity situation. This GATE resistor would slow down the shutdown of Q1 and Q2
dramatically. To prevent a slow turn off in fault conditions, D5 is added to bypass the current limiting resistor R1.
When Q1 and Q2 are turned on, R1 does not cause any delay because the GATE pin is driven with a 24-µA
current source. D6, Q3 and R2 protect Q2 from VGS damage in the event of reverse input polarity. Diodes D5
and D7 are only necessary if the output load is highly capacitive. Such a capacitive load in combination with a
high reverse polarity input voltage condition can exceed the power rating of the internal zener diode between
OUT pin and GATE pin as well as the internal diode between the OUT pin and SENSE pin. External diodes D5
and D7 should be used in reverse polarity protected applications with large capacitive loads.
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8.2.2.1 Design Requirements
Example number 2 design requirements are shown in Table 3.
Table 3. Example Number 2 Circuit Specifications
DESIGN PARAMETER
EXAMPLE VALUE
Operating voltage range
9 V to 24 V
Current max
30 A
OVP setting
27 V typical
UVLO setting
9 V typical
8.2.2.2 Application Curve
Figure 40. Reverse Input Voltage Polarity
8.2.3 Example Number 3: Reverse Polarity Protection With Resistor
Q1
75A, 40V
VIN
D
R3
12 k:
Status
D3
36V
D2
R5
49.9 k:
D
VOUT
Q3
0.6A, 40V
D1
SENSE
R1
2 k:
nPGD
D5
GATE
UVLO LM5060
R6
5.62 k:
OUT
OVP
EN
Enable
S
D4
VIN
R7
5.11 k:
S
R4
10 k:
Q2
75A, 40V
C2
100 nF
GND
TIMER
R8
10 k:
C1
68 nF
R2
10 k:
GND
GND
Figure 41. Application with Reverse Polarity Protection with a Resistor for OUT Pin Protection
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Figure 41 shows an example circuit which is protected against reverse polarity using resistor R8 instead of the
diodes D5 and D7 of Figure 39.
8.2.3.1 Design Requirements
Example number 3 design requirements are shown in Table 4.
Table 4. Example Number 3 Circuit Specifications
DESIGN PARAMETER
EXAMPLE VALUE
Operating voltage range
9 V to 24 V
Current max
30 A
OVP setting
27 V typical
UVLO setting
9 V typical
8.2.3.2 Detailed Design Procedure
8.2.3.2.1 Reverse Polarity Protection With a Resistor
An alternative to using external diodes to protect the LM5060 OUT pin in the reverse polarity input condition is a
resistor in series with the OUT pin. Adding an OUT pin resistor may require modification of the resistor in series
with the SENSE pin. A resistor in series with the OUT pin will limit the current through the internal zener diode
between OUT and GATE as well as through the diode between OUT and SENSE. The value of these resistors
should be calculated to limit the current through the diode across the input terminals of the VDS fault comparator
to be no more than 4 mA. Figure 42 shows the internal circuitry relevant for calculating the values of the resistor
RO in the OUT path to limit the current into the OUT pin to 4 mA.
VOUT
VIN
LM5060
RS
RO
25 mA
max
SENSE
4 mA
max
1 k:
500:
OUT
IOUT-EN
8 PA
ISENSE
16 PA
VDS Fault
Comparator
Figure 42. Current Limiting Resistor for Negative SENSE Condition
When calculating the minimum RO resistor required to limit the current into the OUT pin, the internal current
sources of 8 µA and 16 µA may be neglected. The following formulas can be used to calculate the resistor value
RO(MIN) which is necessary to keep the IO current to less than 4 mA.
Case A is for situations where VOUT > VIN and reverse polarity situation is present (see Figure 42). VIN is
negative, but the voltage at the SENSE pin can roughly be assumed to be 0.0 V due to the internal diode from
the SENSE pin to GND.
RO(MIN) =
VOUT - (4 mA x 1.5 k:)
4 mA
(16)
In this case, VIN also has to be limited to a negative voltage so that reverse current through the SENSE pin does
not exceed 25 mA.
RS(MIN) =
28
VIN
25 mA
(17)
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VIN
VOUT
LM5060
RS
RO
4 mA
max
SENSE
1 k:
500:
OUT
IOUT-EN
ISENSE
8 PA
16 PA
VDS Fault
Comparator
Figure 43. Current Limiting Resistor in the OUT Path for OUT > SENSE Condition
Case B is for situations where VOUT > VIN and there is no reverse polarity situation present (see Figure 43). VIN is
positive and VOUT is also positive, but VOUT is higher than VIN:
RO(MIN) =
(VOUT - VIN)
- (RS + 1.5 k:
4 mA
(18)
In this case the voltage on the SENSE pin should not exceed 65 V.
Case C is for situations where VOUT < VIN and both VIN and VOUT are positive as well. In such cases there is no
risk of excessive OUT pin current. No current limiting resistors are necessary. Both the SENSE and OUT
voltages should be limited to less than 65 V.
VIN
VOUT
LM5060
RS
RO
25 mA
max
SENSE
1 k:
500:
ISENSE
OUT
IOUT-EN
16 PA
8 PA
VDS Fault
Comparator
Figure 44. Current Limiting Resistor for Negative OUT Conditions
Case D for situations where VOUT < VIN, while VOUT is negative and VIN is positive (see Figure 44). RO needs to
be selected to protect the OUT pin from currents exceeding 25 mA.
RO(MIN) =
VOUT
25 mA
(19)
8.2.3.2.2 Fault Detection With RS and RO
Figure 41 shows an example circuit where the OUT pin is protected against a reverse battery situation with a
current limiting resistor RO. When using resistor RO in the OUT pin path, the resistor RS has to be selected taking
the RO resistor into account. The LM5060 monitors the VDS voltage of an external N-Channel MOSFET. The VDS
fault detection voltage is the drain to source voltage threshold (VDSTH). The formula below calculates a proper RS
resistor value for a desired VDSTH taking into account the voltage drop across the RO resistor.
RS =
VDSTH RO x IOUT-EN VOFFSET
+
ISENSE
ISENSE
ISENSE
(20)
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VOFFSET is the offset voltage between the SENSE pin and the OUT pin, ISENSE is the threshold programming
current, and IOUT-EN is the OUT pin bias current. When RS and RO have been selected, the following formula can
be used for VDSTH min and max calculations:
VDSTH = ISENSE x RS -
RO
+ VOFFSET
IRATIO
(21)
The MOSFET drain-to-source current threshold is:
IDSTH =
VDSTH
RDS(ON)
where
•
RDS(ON) is the on resistance of the pass element Q1 in Figure 20
(22)
8.2.3.3 Application Curves
Figure 45. Startup at No Load
Figure 46. Shutdown
Figure 47. Overcurrent Shutdown with Gate Diode
Figure 48. Reverse Input Voltage Polarity
9 Power Supply Recommendations
The recommended input power supple operating voltage range is 5.5 V to 65 V. The VIN source current rating of
the power supply should be adequate to keep the LM5060 in the normal operating range during all load and line
transients. Place a 10 nF or 100 nF ceramic capacitor close to the VIN pin.
30
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10 Layout
10.1 Layout Guidelines
The component placement and layout should generally follow the example provided in Figure 49. Power from
input source to load should flow in a manner similar to that shown in Figure 49 and heavy conductors for traces
bearing the load current should be used. Place the VIN bypass capacitor close to pin 2. Place the TIMER
capacitor close to pin 7.
10.2 Layout Example
POWER FLOW
LM5060
SENSE 1
VIN 2
OVP 3
UVLO 4
EN 5
10 GATE
9 OUT
8 nPGD
7 TIMER
6 GND
Top Trace/Plane
Bottom Plane
VIA
Figure 49. LM5060 Recommended Layout
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10.3 Thermal Considerations
In normal operation the LM5060 dissipates very little power so that thermal design may not be very critical. The
power dissipation is typically the 2 mA input current times the input voltage. If the application is driving a large
capacitive load application, upon shutdown of the LM5060, the load capacitor may partially, or fully, discharge
back through the LM5060 circuitry if no other loads consume the energy of the pre-charged load capacitor. One
application example where energy is dissipated by the LM5060 is a motor drive application with a large capacitor
load. When the LM5060 is turned off, the motor might also turn off such that total residual energy in the load
capacitor is conducted through the OUT pin to ground. The power dissipated within the LM5060 is determined by
the discharge current of 80 mA and the voltage on the load capacitor.
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• LM5060EVAL User Guide, SNVA413
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM5060MM/NOPB
ACTIVE
VSSOP
DGS
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXAB
LM5060MMX/NOPB
ACTIVE
VSSOP
DGS
10
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXAB
LM5060Q1MM/NOPB
ACTIVE
VSSOP
DGS
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SZAB
LM5060Q1MMX/NOPB
ACTIVE
VSSOP
DGS
10
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SZAB
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
12-Nov-2015
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM5060, LM5060-Q1 :
• Catalog: LM5060
• Automotive: LM5060-Q1
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Nov-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM5060MM/NOPB
VSSOP
DGS
10
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5060MMX/NOPB
VSSOP
DGS
10
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5060Q1MM/NOPB
VSSOP
DGS
10
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5060Q1MMX/NOPB
VSSOP
DGS
10
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Nov-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5060MM/NOPB
VSSOP
DGS
10
1000
210.0
185.0
35.0
LM5060MMX/NOPB
VSSOP
DGS
10
3500
367.0
367.0
35.0
LM5060Q1MM/NOPB
VSSOP
DGS
10
1000
210.0
185.0
35.0
LM5060Q1MMX/NOPB
VSSOP
DGS
10
3500
367.0
367.0
35.0
Pack Materials-Page 2
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DLP® Products
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