CJPF12N65 TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating Lower RDS(on) z Low Reverse Transfer Capacitance z z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGSS ±30 Continuous Drain Current ID 12 Pulsed Drain Current(note1) IDM 48 Single Pulsed Avalanche Energy (note2) EAS 540 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 TL 260 Junction and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds [email protected] www.zpsemi.com V A ℃ 1 of 2 CJPF12N65 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Zero gate voltage drain current IDSS VDS =650V, VGS =0V 1 µA Gate-body leakage curren (note3) IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =6A 0.85 Ω On characteristics (note3) 2.0 Dynamic characteristics (note 4) Input capacitance Ciss 1800 Output capacitance Coss Reverse transfer capacitance Crss 25 Total gate charge Qg 42 Gate-source charge Qgs Gate-drain charge Qgd 21 Turn-on delay time td(on) 30 VDS =25V,VGS =0V,f =1MHz pF 200 Switching characteristics (note1,3 4) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VDS =520V,VGS =10V,ID =12A VDD=325V, VGS=10V, RG=25Ω, ID =12A 54 nC 8.6 90 ns 160 90 tf Drain-Source Diode Characteristics Drain-source diode forward voltage(note3) Maximum continuous drain-source diode forward current Maximum pulsed drain-source diode forward current VSD VGS = 0V, IS =12A 1.4 V IS 12 A ISM 48 A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 4. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 2