MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPB407N30N DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,300V IPB407N30N 1Description D²PAK Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.7 mΩ ID 44 A Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPB407N30N PG-TO 263-3 407N30N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 44 34 A TC=25°C TC=100°C - 176 A TC=25°C - - 240 mJ ID=22A,RGS=50Ω dv/dt - - 60 kV/µs ID=44A,VDS=150V, di/dt=1000A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Diode hard commutation destructive current2) Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case3) Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area4) - - 40 K/W - 1) See figure 3 Diode pulse current is defined by thermal and/or package limits 3) Defined by design. Not subject to production test. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=270µA - 1 10 10 300 µA VDS=240V,VGS=0V,Tj=25°C VDS=240V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V RDS(on) - 36 40.7 mΩ VGS=10V,ID=44A Gate resistance RG - 2.4 3.6 Ω - Transconductance gfs 52 103 - S |VDS|>2|ID|RDS(on)max,ID=44A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 300 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 5400 7180 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 281 374 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance1) Crss - 6 13 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 16 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Rise time tr - 9 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Turn-off delay time td(off) - 43 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Fall time tf - 9 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 24 - nC VDD=100V,ID=44A,VGS=0to10V Gate to drain charge Qgd - 7 - nC VDD=100V,ID=44A,VGS=0to10V Switching charge Qsw - 15 - nC VDD=100V,ID=44A,VGS=0to10V Gate charge total Qg - 65 87 nC VDD=100V,ID=44A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=100V,ID=44A,VGS=0to10V Output charge Qoss - 131 - nC VDD=100V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N Table7Reversediode Parameter Symbol Values Unit Note/TestCondition 44 A TC=25°C - 176 A TC=25°C - - 44 A TC=25°C,diF/dt=1000A/µs VSD - 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C trr - 152 304 ns VR=100V,IF=32.2A,diF/dt=100A/µs Qrr - 844 1689 nC VR=100V,IF=32.2A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - Diode hard commutation current IS,hard Diode forward voltage Diode continous forward current 1) Diode pulse current 2) 3) Reverse recovery time 3) Reverse recovery charge 1) Diode pulse current is defined by thermal and/or package limits Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs 3) Defined by design. Not subject to production test. 2) Final Data Sheet 6 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 350 50 300 40 30 200 ID[A] Ptot[W] 250 150 20 100 10 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 2 10 µs 10 0.5 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10-1 0.2 0.1 10 ms 0.05 0 10 0.02 DC 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 50 10 V 100 40 8V 6V ID[A] RDS(on)[mΩ] 5V 50 8V 10 V 30 20 10 0 0 1 2 3 4 0 5 0 20 VDS[V] 40 ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 90 150 75 125 60 100 gfs[S] ID[A] 60 80 60 80 ID[A] 45 30 75 50 175 °C 15 25 25 °C 0 0 2 4 6 0 0 VGS[V] 40 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 120 4 100 2700 µA 3 270 µA 60 VGS(th)[V] RDS(on)[mΩ] 80 98% typ 2 40 1 20 0 -60 -20 20 60 100 140 0 -60 180 -10 Tj[°C] 40 90 140 190 Tj[°C] RDS(on)=f(Tj);ID=44A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 175 °C 25°C, 98% 175°C, 98% Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 50 100 150 200 250 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 8 240 V 101 150 V 6 25 °C VGS[V] IAS[A] 100 °C 125 °C 60 V 4 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 340 330 VBR(DSS)[V] 320 310 300 290 280 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N RevisionHistory IPB407N30N Revision:2014-12-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-27 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-12-27