Z ibo Seno Electronic Engineering Co., Ltd. DS32W – DS320W 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! ! ! ! ! ! 1.4± 0.15 1.9± 0.1 Ideally Suited for Automatic Assembly SOD - 123FL Low Power Loss, High Efficiency Surge Overload Rating to 2 0A Peak Cathode Band Top View For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O 2.8 ± 0.1 Mechanical Data ! ! ! ! ! ! 1.0±0.2 Schottky Barrier Chip 0.10-0.30 ! 0.6±0.25 Case: SOD-123, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C @TA=25°C unless otherwise specified DS32W DS33W DS34W DS35W DS36W DS38W DS310W DS315W DS320W Unit VRRM VRWM VR 20 30 40 50 60 80 100 150 200 V VR(RMS) 14 21 28 35 42 56 70 105 140 V IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Forward Voltage @IF = 3.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) 0.55 0.70 0.85 0.3 5 0.5 10 RJL RJA 0.95 28 40 V mA °C/W Typical Junction Capacitance Cj Operating Temperature Range Tj -65 to +125 °C TSTG -65 to +150 °C Storage Temperature Range 250 160 pF Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area. DS32W – DS320W 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) DS32W – DS320W 3.0 2.0 1.0 25 50 75 100 125 150 38 - 320 0.1 Tj - 25ºC IF Pulse Width = 300 µs 0.01 1.2 1000 Single Half-Sine-Wave (JEDEC Method) Tj = 25°C f = 1 MHz Tj = 100°C 80 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics Fig. 1 Forward Current Derating Curve 60 40 20 0 0.4 0 TL , LEAD TEMPERATURE (ºC) 100 35 - 36 32 - 34 1.0 100 10 1 10 100 0.1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 100 10 Tj = 100ºC 1.0 Tj = 75ºC 0.1 0.01 Tj = 25ºC 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS32W – DS320W 2 of 2 www.senocn.com Alldatasheet