UTC MPSA44HG-T92-B High voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MPSA44H
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
„
FEATURES
* Collector-Emitter Voltage:* VCEO=400V
* Collector Current up to 300mA
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MPSA44HL-AB3-R
MPSA44HG-AB3-R
MPSA44HL-T92-B
MPSA44HG-T92-B
MPSA44HL-T92-K
MPSA44HG-T92-K
MPSA44HL-T92-R
MPSA44HG-T92-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., LTD
Package
SOT-89
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
SOT-89
TO-92
PC
RATINGS
800
400
6
300
500
625
UNIT
V
V
V
mA
mW
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
Output Capacitance
COB
Note: Pulse test: PW<300μs, Duty Cycle<2%
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=400V, IE=0
VCE=400V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
40
82
45
40
VCE=20V,IC=10mA, f=100MHz
VCB=20V, IE=0 f=1MHz
50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
800
400
6
TYP
MAX UNIT
V
V
V
0.1
μA
0.5
μA
0.1
μA
240
240
240
240
0.4
0.5
0.75
0.75
V
7
MHz
pF
V
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
ON Voltage
1.0
Collector SaturationRegion
0.5
TA=25℃
0.8
0.4
VBE(SAT), IC/IB=10
IC=10mA
0.6
0.3
VBE(ON), VCE=10V
0
VCE(SAT), IC/IB=10
10-1
100
101
102
Collector Current, IC (mA)
0.1
103
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
IC=50mA
0.2
0.4
0.2
IC=1mA
TA=25℃
0 1
102
103
104
10
Base Current, IB (µA)
105
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TYPICAL CHARACTERISTICS(Cont.)
High Frequency Current Gain
102
Safe Operating Area
101
103
1s
102
101
100
100
0.1ms
C
100
101
102
Collector Current, IC (mA)
10
C
10-1 -1
10
1ms
3
5
=2
TC
100
Valid Duty
Cycle<10%
5
Collector Current, IC (mA)
VCE=10V
f=10MHz
TA=25 C
=2
TA
Small Signal Current Gain, hFE
„
NPN SILICON TRANSISTOR
101
102
103
Collector Voltage (V)
104
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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