APTGT100TDU120TPG VCES = 1200V IC = 100A @ Tc = 80°C Triple Dual Common Source Fast Trench + Field Stop IGBT Power Module Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring C1 C3 NTC1 NTC2 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 140 100 200 ±20 480 Tj = 125°C 200A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V May, 2009 Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100TDU120TPG – Rev 0 Symbol VCES APTGT100TDU120TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 3.9Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Min Typ 7200 400 300 260 30 420 pF ns 70 290 50 520 ns 90 10 mJ 10 Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy VR=1200V IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =2000A/µs www.microsemi.com Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C 280 9 Tj = 125°C Tj = 25°C Tj = 125°C 18 5 9 Max 250 500 Unit V µA A 2.1 V ns May, 2009 IRM Test Conditions µC mJ 2-5 APTGT100TDU120TPG – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100TDU120TPG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B 25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.26 0.48 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 °C/W V 175 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100TDU120TPG – Rev 0 May, 2009 9 places (3:1) APTGT100TDU120TPG Typical Performance Curve Output Characteristics (VGE=15V) 200 TJ=125°C VGE=17V 150 IC (A) IC (A) TJ = 125°C TJ=25°C 150 Output Characteristics 200 100 VGE=13V VGE=15V 100 VGE=9V 50 50 0 0 0 1 2 VCE (V) 4 0 Transfert Characteristics 200 175 E (mJ) 100 75 50 15 3 4 Eon Eoff Er 10 TJ=125°C 2 VCE (V) VCE = 600V VGE = 15V RG = 3.9 Ω TJ = 125°C 20 TJ=125°C 125 1 Energy losses vs Collector Current 25 TJ=25°C 150 IC (A) 3 Eon 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 25 Eon 200 160 IC (A) E (mJ) 240 VCE = 600V VGE =15V IC = 100A TJ = 125°C 15 100 125 150 175 200 IC (A) VGE (V) 20 75 Eoff 10 120 Er 80 5 VGE=15V TJ=125°C RG=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 IGBT May, 2009 0.25 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT100TDU120TPG – Rev 0 Thermal Impedance (°C/W) 0.3 APTGT100TDU120TPG Forward Characteristic of diode 200 VCE=600V D=50% RG=3.9 Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS TJ=25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ=125°C 100 20 50 10 TJ=125°C Hard switching 0 0 0 20 40 60 80 IC (A) 100 120 0 140 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.3 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100TDU120TPG – Rev 0 May, 2009 rectangular Pulse Duration (Seconds)