Panasonic ON1021 Photo lnterrupter Datasheet

Transmissive Photosensors (Photo lnterrupters)
CNZ1021 (ON1021), CNZ1023 (ON1023),
CNA1009H (ON1024)
Photo lnterrupter
For contactless SW, object detection
■ Overview
■ Features
CNZ1021, CNZ1023 and CNA1009H are a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
• Highly precise position detection: 0.25 mm
• Gap width: 3 mm (CNZ1021, CNZ1023)
5 mm (CNA1009H)
• The type directly attached to PCB ....... CNZ1021
Screw-fastened type (one side) ............ CNZ1023
The type directly attached to PCB ....... CNA1009H
(with a positioning pins)
CNZ1021
Unit: mm
CNZ1023
Unit: mm
Σ
Σ
18.0
(2-0.45)
(4-R2)
(2-0.45)
(2-0.45)
(7.6)
(2.54)
1
4
6.0
3.5
(2-0.45)
(2.54)
SEC. A-A'
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-001 Package
3
0.5
+0.15
φ3.0-0
+0.15
A'
SEC. A-A'
2
2-R1.5
Device
center
3.0 -0
(2.5)
A'
(C1.2)
0.4±0.1
A
10.0
10.0 min.
2.1±0.15
10.0
Device
center
5.0
3.0±0.15
2.5
(2.5)
(C1.2)
(7.6)
12.0±0.15
12.0
0.4±0.1
A
2.5
10.0 min.
2.0
5.0
2.1±0.15
12.0
3.0±0.15
CNA1009H
2
3
1
4
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-003 Package
Unit: mm
Σ
14.0
6.0
5.0
(2.5)
5.0±0.15
0.5±0.1
A
2.2±0.15
10.0
A'
2-0.7
2.5
10.0 min.
(C1)
Device
center
2-φ0.7±0.1
5.2±0.1
(2-0.45)
(2-0.45)
(2.54)
(10.0)
SEC. A-A'
2
3
1
2.35±0.1
4
6.6±0.1
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-004 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHG00017BED
1
CNZ1021, CNZ1023, CNA1009H
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Input (Light Reverse
emitting diode) voltage
Symbol
Rating
Unit
VR
3
V
CNZ1021
CNZ1023
3
CNA1009H
5
Forward current
IF
50
mA
Power dissipation *1
PD
75
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
VCEO
30
V
Emitter-collector voltage
(Base open)
VECO
5
V
Temperature
Collector current
IC
20
mA
Collector power dissipation *2
PC
100
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Forward voltage
Input
characteristics Reverse current
Output
Collector-emitter cutoff current
characteristics (Base open)
VF
IF = 20 mA
IR
VR = 3 V
ICEO
Collector current
IC
Transfer
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time
*
Fall time *
Conditions
Min
VCE = 10 V
50 Ω
2
VCC
VCC = 5 V, IF = 20 mA, RL = 100 Ω
1.25
1.40
V
10
µA
200
nA
15.0
mA
0.4
V
0.5
IF = 40 mA, IC = 1 mA
Unit
tr
VCC = 5 V, IC = 1 mA
5
µs
tf
RL = 100 Ω
5
µs
(Input pulse)
Sig. out
RL
Max
10
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
Typ
90%
10%
(Output pulse)
tr
SHG00017BED
tf
tr : Rise time
tf : Fall time
CNZ1021, CNZ1023, CNA1009H
IF , I C  T a
IF  V F
Ta = 25°C
50
IF = 50 mA
40
30
IC
20
10
Forward voltage VF (V)
50
40
30
20
40
60
80
0
100
0
0.4
10 mA
1 mA
0.8
0.4
IC  I F
2.0
Collector current IC (mA)
10 −1
40
20 mA
10 mA
1
10 −1
1
VCE = 5 V
IF = 20 mA
80
40
0
−40
102
10
120
0
40
tr  I C
RL = 1 kΩ
500 Ω
10
Rise time tr (µs)
100
VCC = 5 V
Ta = 25°C
102
1
∆IC  d
102
VCE = 10 V
100 Ω
1
10 −1
10 −1
80
Ambient temperature Ta (°C )
10 −2
10 −1
1
10
Collector current IC (mA)
SHG00017BED
80
Ambient temperature Ta (°C )
Collector-emitter voltage VCE (V)
ICEO  Ta
10
80
∆IC  Ta
IF = 30 mA
10 −2
10 −1
102
10
40
0
Ambient temperature Ta (°C )
160
10
Forward current IF (mA)
0
0
−40
2.4
Ta = 25°C
1
103
1.6
IC  VCE
10
1
1.2
102
VCE = 5 V
Ta = 25°C
10 −2
10 −1
0.8
Forward voltage VF (V)
Relative collector current ∆IC (%)
20
Relative collector current ∆IC (%)
0
102
10 −2
−40
1.2
10
Ambient temperature Ta (°C )
Collector current IC (mA)
1.6
IF
0
−25
Collector-emitter cutoff current (Base open) ICEO (µA)
VF  T a
60
Forward current IF (mA)
Forward current IF , collector current IC (mA)
60
102
VCE = 5 V
Ta = 25°C
IF = 20 mA
80
Criterion
0
d
60
40
20
0
0
1
2
3
4
5
6
Distance d (mm)
3
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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