MA-COM NPT2019 Dc-6 ghz hemt Datasheet

NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features





Suitable for linear and pulsed applications
Tunable from DC-6 GHz
48V Operation
Industry Standard Plastic Package
High Drain Efficiency (>60%)
Applications






Defense Communications
Land Mobile Radio
Avionics
Wireless Infrastructure
ISM Applications
VHF/UHF/L/S-Band Radar
DC-6 GHz
25W
GaN HEMT
Product Description
The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with pulsed output power levels
to 25W (44 dBm) in an industry standard surface mount plastic package.
RF Specifications (Pulsed*, 2.5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C
Symbol
Parameter
Min
Typ
Max
Units
G SS
Small-signal Gain
-
16.2
-
dB
PSAT
Saturated Output Power
-
44.8
-
dBm
SAT
Efficiency at Saturated Output Power
-
60
-
%
Gain at POUT = 25W*
-
16
-
dB
Drain Efficiency at POUT = 25W*
-
55
-
%
Drain Voltage
-
48
-
V
GP

VDS

Ruggedness: Output Mismatch, all phase angles
VSWR = TBD:1, No Device Damage
* Pulse Conditions: 100µS pulse width, 10% duty cycle
Preliminary Datasheet
Page 1
NDS-043 Rev. 2, 012414
NPT2019
Preliminary
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
IDLK
Drain-Source Leakage Current
(VGS=-8V, VDS=160V)
-
-
6
mA
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
-
-
3
mA
On Characteristics
VT
Gate Threshold Voltage
(VDS=48V, I D=6mA)
-2.5
-1.5
-0.5
V
VGSQ
Gate Quiescent Voltage
(VDS=48V, I D=150mA)
-2.1
-1.2
-0.3
V
RON
On Resistance
(VDS=2V, I D=45mA)
-
0.75
-

Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
-
3.5
-
A
Typ
Units
3.8
°C/W
ID, MAX
Thermal Resistance Specification:
Symbol
RJC
Parameter
Thermal Resistance (Junction-to-Case),
TJ = 200 °C
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
160
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
12
mA
PT
Total Device Power Dissipation (Derated above 25°C)
46
W
-65 to 150
°C
200
°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
HBM
Human Body Model ESD Rating (per JESD22-A114)
MSL
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
Preliminary Datasheet
Page 2
Class 1B
TBD
NDS-043 Rev. 2, 012414
NPT2019
Preliminary
Load-Pull Data, Reference Plane at Device Leads
VDS=48V, IDQ=150mA, TC=25C unless otherwise noted
Optimum Source and Load Impedances:
(Pulsed CW* Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
ZS ()
PSAT (W)
ZL ()
GSS (dB)
Drain Efficiency
(MHz)
@ PSAT (%)
900
4.0 + j4.5
9.8 + j17.3
36
26.0
63
2500
2.7 - j3.9
5.7 + j9.0
35
17.0
58
4000
2.5 - j10.9
4.9 + j4.0
34
13.5
55
5800
3.1 - j13.5
2.8 - j2.8
30
12.5
52
* Pulse Conditions: 100µS pulse width, 10% duty cycle
Figure 1: CW Power/Drain Efficiency
Tradeoff Impedances, ZO=20
30
70
60
20
Drain Efficiency (%)
Gain (dB)
25
900MHz
2500MHz
4000MHz
5800MHz
15
50
40
900MHz
2500MHz
4000MHz
5800MHz
30
20
10
10
25
30
35
40
45
50
POUT (dBm)
30
35
40
45
50
POUT (dBm)
Figure 3: Efficiency vs. POUT
Figure 2: Gain vs. POUT
Preliminary Datasheet
0
25
Page 3
NDS-043 Rev. 2, 012414
NPT2019
Preliminary
Figure 1 - DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters])
Pin
Function
10, 11, 12
Gate — RF Input
2-6
Drain — RF Output
Exposed Pad
Source — Ground
1, 7, 8, 9, 13, 14
No Connect*
* All No Connect pins may be left floating or grounded
Preliminary Datasheet
Page 4
NDS-043 Rev. 2, 012414
NPT2019
Preliminary
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Morrisville, NC 27560 USA
+1.919.807.9100 (telephone)
+1.919.4 7 2.0692 (fax)
[email protected]
www.nitronex.com
Additional Information
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(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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Preliminary Datasheet
Page 5
NDS-043 Rev. 2, 012414
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