INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB52N15D,IIRFB52N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation @TC=25℃ 320 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 0.47 ℃/W 62 ℃/W Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB52N15D,IIRFB52N15D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA 150 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3 RDS(on) Drain-Source On-Resistance VGS=10V; ID=36A Gate-Source Leakage Current VGS=± 30V IGSS IDSS VSD CONDITIONS MIN TYP MAX UNIT V 5 V 32 mΩ ±100 nA VDS=150V; VGS= 0V 25 μA VDS=120V; VGS= 0V;Tj=150℃ 250 μA IS =36A, VGS = 0 V 1.5 V Drain-Source Leakage Current Diode forward voltage isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark