MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE(sat) = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E2-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110509a 1-6 MIXA 61H1200ED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V ±20 ±30 V V IC25 IC80 collector current TC = 25°C TC = 80°C 85 60 A A Ptot total power dissipation TC = 25°C 290 W VCE(sat) collector emitter saturation voltage IC = 55 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE TVJ = 25°C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.5 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 50 A 165 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 15 W TVJ = 125°C 70 40 250 100 4.5 5.5 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 15 W; TVJ = 125°C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 15 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 25°C continuous transient 5.4 0.2 TVJ = 125°C 150 A 10 µs A 0.43 K/W 200 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 60 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1200 A/µs IF = 60 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 85 57 A A 2.2 V V TVJ = 25°C TVJ = 125°C 1.95 1.95 TVJ = 125°C 8 60 350 2.5 µC A ns mJ 0.6 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110509a 2-6 MIXA 61H1200ED Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage Conditions min. -40 -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3000 V~ IISOL < 1 mA; 50/60 Hz CTI comparative tracking index Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink - with heatsink compound Weight 6 Nm mm mm 5 mW 0.02 K/W 180 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 V0 R0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ = 150°C free wheeling diode D1 - D6 TVJ = 150°C Ratings typ. max. 1.1 25.1 1.22 12.99 Unit V mW V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110509a 3-6 MIXA 61H1200ED Circuit Diagram 13 D5 D1 T1 1 9 2 T5 10 16 14 D2 T2 3 4 D6 11 T6 12 17 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Part number 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits M I X A 61 H 1200 ED XXXXXXXXXX yywwx Logo UL Part name Date Code Location Ordering Part Name Marking on Product Standard MIXA61H1200ED MIXA61H1200ED IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved = Module = IGBT = XPT = standard = Current Rating [A] = H~ Bridge = Reverse Voltage [V] = E2-Pack Delivering Mode Base Qty Ordering Code Box 6 511060 20110509a 4-6 MIXA 61H1200ED Inverter T1 - T6 100 100 VGE = 15 V 80 80 60 TVJ = 25°C IC IC TVJ = 125°C [A] 40 60 0 1 2 0 3 VCE [V] 9V 0 1 4 15 VGE 10 [V] 40 5 TVJ = 125°C 20 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 40 80 10 Eoff [mJ] 4 5.0 2 60 80 100 120 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 4.0 IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 4.5 40 240 Eoff 5.5 E 20 200 6.0 6 0 160 Fig. 4 Typ. turn-on gate charge Eon RG = 15 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 8 120 QG [nC] VGE [V] Fig. 3 Typ. tranfer characteristics 0 3 IC = 50 A VCE = 600 V IC 60 [mJ] VCE [V] 20 80 E 2 Fig. 2 Typ. output characteristics 100 0 TVJ = 125°C 20 Fig. 1 Typ. output characteristics [A] 11 V [A] 40 20 0 13 V VGE = 15 V 17 V 19 V 12 16 20 24 28 32 RG [ΩW] Fig. 6 Typ. switching energy vs. gate resistance 20110509a 5-6 MIXA 61H1200ED Inverter D1 - D6 120 4.0 TVJ = 125°C VR = 600 V 100 120 A 3.2 80 IC 60 A 2.4 Erec 60 [mJ] [A] 40 30 A 1.6 TVJ = 125°C TVJ = 25°C 20 0 0.0 0.5 1.0 0.8 1.5 2.0 2.5 0.0 600 3.0 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] VF [V] Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. recovery energy Erec versu versus di/dt IGBT 1 2 3 4 100000 FRD Ri ti 0.1 0.05 0.21 0.07 0.0025 0.03 0.03 0.08 ti Ri 0.137 0.1 0.233 0.13 0.0025 0.03 0.03 0.08 1 Diode IGBT 10000 R ZthJC 0.1 [Ω] [K/W] 1000 100 25 50 75 100 125 150 TC [°C] Fig. 9 Typ. NTC resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 10 9 Typ. transient thermal impedance 20110509a 6-6