CYSTEKEC MTC2590V8 P-channel logic level enhancement mode mosfet Datasheet

Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 1/12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC2590V8
BVDSS
ID
RDSON(MAX.)
N-CH
30V
6A
23mΩ
P-CH
-30V
-5A
50mΩ
Description
The MTC2590V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The DFN3×3 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3×3
MTC2590V8
G:Gate S:Source D:Drain
Pin 1
Ordering Information
Device
MTC2590V8-0-T6-G
Package
Shipping
DFN3×3
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current *2
TA=25 °C, VGS=10V (-10V)
ID
TA=70 °C, VGS=10V (-10V)
Pulsed Drain Current
Total Power Dissipation
Limits
N-channel P-channel
30
-30
IDM
*1
Single device operation
Single device value at dual operation
Operating Junction and Storage Temperature Range
±20
±20
6
-5
4.8
-4
30
-30
Unit
V
A
1.5 *2
PD
1.24 *2
Tj; Tstg
°C
-55~+150
Thermal Data
Parameter
Symbol
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Rth,j-a
Value
84 *2
101 *2
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
30
1
-
1.8
16
28
7
2.5
±100
1
10
23
40
-
-
758
55
61
8
7
24
13
11
2.9
3.2
-
-
0.78
29
10
1.2
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=30V, VGS=0V
VDS=24V, VGS=0V, Tj=70°C
VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS=5V, ID=6A
pF
VDS=20V, VGS=0V, f=1MHz
ns
VDS=15V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=15V, ID=6A, VGS=10V
V
ns
nC
VGS=0V, IS=2.3A
V
nA
μA
mΩ
IS=5A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 3/12
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-30
-1.0
-
-1.7
38
61
7
-2.5
±100
-1
-10
50
80
-
-
838
64
65
9
7
40
13
14
3.6
3.3
-
-
-0.82
32
13.5
-1.2
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V, Tj=70°C
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=-5V, ID=-5A
pF
VDS=-20V, VGS=0V, f=1MHz
ns
VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-15V, ID=-5A, VGS=-10V
V
VGS=0V, IS=-2.3A
ns
nC
IS=-4.5A, VGS=0V, dI/dt=100A/μs
V
nA
μA
mΩ
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTC2590V8
CYStek Product Specification
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 4/12
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V, 9V, 8V, 7V, 6V, 5V, 4V
25
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
30
20
15
VGS=3V
10
1.2
1
0.8
5
0.4
0
0
1
2
3
4
5
6
7
8
9
-75
10
-25
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
VGS=3V
VGS=3.5V VGS=4V
VSD, Source-Drain Voltage(V)
1.2
VGS=4.5V
100
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=10V
10
0.01
0.2
0.1
1
ID, Drain Current(A)
10
0
100
200
4
6
8
IDR , Reverse Drain Current(A)
10
1.8
R DS(on), Normalized Static DrainSource On-State Resistance
180
160
140
120
100
80
ID=6A
ID=4A
60
40
20
1.6
VGS=10V, ID=6A
1.4
1.2
1
VGS=4.5V, ID=4A
0.8
0.6
0.4
0
0
MTC2590V8
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
VDS, Drain-Source Voltage(V)
1000
RDS(on) , Static Drain-Source On-State
Resistance(mΩ)
ID=250μA,
VGS=0V
0.6
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 5/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), NormalizedThreshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
Crss
100
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
VDS=15V
ID=6A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
6
8
10
12
7
RDS(ON)
Limited
100μs
1ms
1
10ms
100ms
TA=25°C, Tj=150°C,
VGS=10V, RθJA=84°C/W
Single Pulse
1s
DC
ID, Maximum Drain Current(A)
ID, Drain Current(A)
4
Maximum Drain Current vs JunctionTemperature
100
6
5
4
3
2
1
TA=25°C, VGS=10V, RθJA=84°C/W
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTC2590V8
2
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
0.01
0.01
60 80 100 120 140 160
10
1
0.1
20 40
Gate Charge Characteristics
10
10
0
Tj, Junction Temperature(°C)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
200
30
180
160
20
140
Power (W)
ID, Drain Current(A)
VDS=10V
25
15
10
TJ(MAX) =150°C
TA=25°C
θJA=84°C/W
120
100
80
60
40
5
20
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=84 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 7/12
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
-ID, Drain Current (A)
25
-BVDSS, Normalized Drain-Source
Breakdown Voltage
30
10V, 9V, 8V, 7V, 6V, 5V
20
-VGS=4V
15
10
-VGS=3V
5
1.4
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
5
6
7
8
-VDS, Drain-Source Voltage(V)
9
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4V
100
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
1.6
180
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
140
120
100
ID=-5A
ID=-4A
80
60
40
1.4
VGS=-10V, ID=-5A
1.2
1
VGS=-4.5V, ID=-4A
0.8
0.6
20
0.4
0
0
MTC2590V8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 8/12
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) ,Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-10V
Pulsed
Ta=25°C
VDS=-15V
ID=-5A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs JunctionTemperature
100
6
RDS(ON)
Limited
10
100μs
1ms
10ms
1
100ms
TA=25°C, Tj=150°C,
VGS=-10V, RθJA=84°C/W
Single Pulse
0.1
1s
DC
0.01
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
5
4
3
2
1
TA=25°C, VGS=-10V, RθJA=84°C/W
0
0.01
MTC2590V8
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 9/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
30
200
VDS=10V
180
160
20
Power (W)
ID, Drain Current(A)
25
15
TJ(MAX) =150°C
TA=25°C
θJA=84°C/W
140
120
100
80
10
60
40
5
20
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
0
0.0001
5
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=84 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC2590V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C839V8
Issued Date : 2013.09.26
Revised Date :
Page No. : 12/12
DFN3×3 Dimension
Marking:
D1 D1 D2 D2
Date
Code
2590
S1 G1 S2 G2
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
Min.
Max.
0.650
0.850
0.152 REF
0.000
0.050
2.900
3.100
0.935
1.135
0.280
0.480
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
D2
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.037
0.045
0.011
0.019
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC2590V8
CYStek Product Specification
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