IRF IRHNJ9230 Simple drive requirement Datasheet

PD-97821
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ9230
200V, P-CHANNEL
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ9230
100K Rads (Si)
IRHNJ93230
300K Rads (Si)
RDS(on)
0.8Ω
0.8Ω
ID
-6.5A
-6.5A
SMD-0.5
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Units
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
-6.5
-4.1
-26
75
0.6
± 20
165
-6.5
7.5
-27
-55 to 150
Package Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes, refer to the last page
www.irf.com
1
08/01/14
IRHNJ9230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source
—
On-State Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
2.0
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
—
V
-0.27
—
V/°C
—
0.8
Ω
—
—
—
—
-4.0
—
-25
-250
V
S
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
45
10
25
30
50
75
65
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1360
190
40
—
—
—
µA
nA
nC
ns
nH
pF
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -4.1A „
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -4.1A „
VDS = -160V,VGS = 0V
VDS = -160V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -6.5A
VDS = -100V
VDD = - 100V, ID = - 6.5A,
VGS = -12V, RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = - 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -6.5A, VGS = 0V Ã
Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max Units
—
—
—
12
1.67
—
°C/W
Test Conditions
Soldered to 1” Sq. Copper clad Board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHNJ9230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-0.5)
Diode Forward Voltage Ã
-200
- 2.0
—
—
—
—
—
-4.0
-100
100
-25
0.804
—
—
300K Rads (Si)2 Units
Min
Max
-200
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.804
0.8
—
-5.0
—
Test Conditions
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20V
VDS= -160V, VGS = 0V
VGS = -12V, ID = -4.1A
0.8
Ω
VGS = -12V, ID = -4.1A
-5.0
V
VGS = 0V, IS = -6.5A
V
nA
1. Part number IRHNJ9230
2. Part number IRHNJ93230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2))
28.0
36.8
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V
43.0
-200
-200
-200
39.0
-200
-200
-125
Energy
(MeV)
285
305
@VGS=15V
-200
-75
@VGS=20V
—
—
-250
VDS
-200
-150
Cu
Br
-100
-50
0
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
www.irf.com
3
IRHNJ9230
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
-5.0V
1
10
-5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
10
1
100
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
V DS = -50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.5
1
5.0
1
10
100
Fig 2. Typical Output Characteristics
100
10
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -6.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2000
Ciss
1500
1000
Coss
500
20
-VGS , Gate-to-Source Voltage (V)
2500
IRHNJ9230
ID = -6.5A
VDS =-160V
VDS =-100V
VDS =-40V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5.0
10
100us
1ms
1
0.1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ9230
Pre-Irradiation
RD
V DS
8.0
-ID , Drain Current (A)
VGS
D.U.T.
RG
6.0
-
+
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
150
10%
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNJ9230
D.U.T
RG
-20V
VGS
IAS
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
400
ID
-2.9A
-4.1A
BOTTOM -6.5A
TOP
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12V
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
50KΩ
-12V
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ9230
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -50V, starting TJ = 25°C, L =11mH
Peak IL = -6.5A, VGS = -12V
 ISD ≤ -6.5A, di/dt ≤ -375A/µs,
VDD ≤ -200V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V GS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2014
8
www.irf.com