DMP6110SVTQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TC = +25°C 105mΩ @ VGS = -10V -7.3A 130mΩ @ VGS = -4.5V -6.5A V(BR)DSS NEW PRODUCT Features and Benefits -60V Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power Management Functions DC-DC Converters Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Device Schematic Equivalent Circuit Top View Ordering Information (Note 5) Part Number DMP6110SVTQ-7 DMP6110SVTQ-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information P61 = Product Type Marking Code YM or YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 2018 F Mar 3 Apr 4 2019 G May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 Aug 8 2021 J Sep 9 2022 K Oct O 2023 L Nov N Dec D October 2016 © Diodes Incorporated DMP6110SVTQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C Continuous Drain Current (Note 7) VGS = -10V ID Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (380µs Pulse, 1% Duty Cycle) IS IDM Value -60 ±20 -7.3 -5.8 -1.8 -24 Unit V V Value 1.2 0.75 105 60 1.8 1.1 69 39 Unit A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range W °C/W °C/W W °C/W °C/W RθJC 15 °C/W TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) VSD -0.7 -3 105 130 -1.2 V Static Drain-Source On-Resistance -1 V VDS = VGS, ID = -250µA VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -3.5A VGS = 0V, IS = -1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 969 57 44 13.7 8.2 17.2 3.0 3.1 4.4 23 34 42 13.2 6.18 pF VDS = -30V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -30V, ID = -12A ns VGS = -10V, VDS = -30V, RGEN = 3Ω, ID = -12A ns nC IS = -12A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 2 of 7 www.diodes.com October 2016 © Diodes Incorporated DMP6110SVTQ 20.0 20 VGS=-10V 18.0 VGS=-4.0V 14.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS=-4.5V VGS=-5.0V 12.0 VGS=-3.5V 10.0 8.0 6.0 VGS=-3.0V 4.0 VGS=-2.8V 2.0 14 12 10 8 6 4 125℃ 2 0 1 2 3 4 1 5 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.14 0.12 0.1 VGS=-4.5V 0.08 VGS=-10V 0.06 0.04 0.02 1 5 9 13 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 25℃ -55℃ 150℃ 0 0.0 17 21 0.3 0.25 0.2 ID=-4.5A 0.15 0.1 0.05 ID=-3.5A 0 0 4 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.14 2 VGS=-10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 16.0 VDS=-5V 18 150℃ 0.12 125℃ 0.1 85℃ 0.08 25℃ 0.06 -55℃ 0.04 0.02 1 3 5 7 9 11 13 15 17 19 21 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 3 of 7 www.diodes.com 1.8 VGS=-10V, ID=-4.5A 1.6 1.4 1.2 VGS=-4.5V, ID=-3.5A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature October 2016 © Diodes Incorporated DMP6110SVTQ 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 VGS=-4.5V, ID=-3.5A 0.1 0.08 0.06 VGS=-10V, ID=-4.5A 0.04 2 1.8 ID=-1mA 1.6 ID=-250μA 1.4 1.2 1 0.8 0.02 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 50 75 100 150 10000 20 f=1MHz CT, JUNCTION CAPACITANCE (pF) 18 16 14 12 10 VGS=0V, TA=85℃ 8 VGS=0V, TA=125℃ 6 4 VGS=0V, TA=25℃ VGS=0V, TA=150℃ 2 VGS=0V, TA=-55℃ 0 0.3 0.6 0.9 1.2 Ciss 1000 100 Coss Crss 10 0 0 1.5 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) NEW PRODUCT 0.14 VDS=-30V, ID=-12A 4 PW =100μs PW =1ms 10 1 PW =10ms PW =100ms 0.1 2 TJ(MAX)=150℃ PW =1s TA=25℃ Single Pulse PW =10s DUT on 1*MRP board VGS= -10V DC 0.01 0 0 2 4 6 8 10 12 14 16 18 Document number: DS39190 Rev. 1 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMP6110SVTQ 0.1 4 of 7 www.diodes.com October 2016 © Diodes Incorporated DMP6110SVTQ r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 RθJA(t)=r(t) * RθJA RθJA=105℃/W Duty Cycle, D=t1 / t2 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 5 of 7 www.diodes.com October 2016 © Diodes Incorporated DMP6110SVTQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT TSOT26 D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e L2 01(4x) b A2 A1 A Seating Plane Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 6 of 7 www.diodes.com October 2016 © Diodes Incorporated DMP6110SVTQ IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMP6110SVTQ Document number: DS39190 Rev. 1 - 2 7 of 7 www.diodes.com October 2016 © Diodes Incorporated