BSC028N06NST MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 100 A Qoss 43 nC QG(0..10V) 37 nC Type/OrderingCode Package BSC028N06NST PG-TDSON-8 1) 5 6 2 Marking 028N06NS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 97 24 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 100 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 100 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.9 1.5 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=50µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.3 3.4 2.8 4.2 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 1.3 1.95 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss 2025 2700 3375 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss 495 660 825 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss 8.5 28 56 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 11 22 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 38 57 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 19 38 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 8 16 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs 9 12 16.5 nC VDD=30V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) 6 8 11 nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd 5 7 10.3 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw 8 12 17 nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg 31 37 49 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau 4.0 4.6 5.2 V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) 27 33 43 nC VDS=0.1V,VGS=0to10V Output charge Qoss 32 43 54 nC VDD=30V,VGS=0V 1) 2) Defined by design. Not subject to production test Defined by design. Not subject to production test.See ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 4 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25°C - 400 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr 14 35 56 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr 14 29 58 nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 120 120 100 100 80 80 ID[A] Ptot[W] Diagram1:Powerdissipation 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 0.5 0.2 ZthJC[K/W] ID[A] 100 µs 1 ms 10 ms 101 DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 10 V 360 7V 5.5 V 5V 7 6V 320 6 280 RDS(on)[mΩ] ID[A] 5 6V 240 200 160 5.5 V 4 7V 3 120 10 V 2 80 5V 1 40 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 160 360 320 120 280 gfs[S] ID[A] 240 200 80 160 120 40 80 40 0 175 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6.0 5 5.5 5.0 4 4.5 max 3.5 3 VGS(th)[V] RDS(on)[mΩ] 4.0 3.0 typ 2.5 500 µA 50 µA 2 2.0 1.5 1 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 1 10 0 20 40 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 100 °C 12 V 25 °C 48 V 150 °C 101 IAV[A] VGS[V] 8 100 6 4 2 10-1 100 101 102 103 0 0 tAV[µs] 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.1,2017-10-19 OptiMOSTMPower-Transistor,60V BSC028N06NST RevisionHistory BSC028N06NST Revision:2017-10-19,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-02 Release of final version 2.1 2017-10-19 Update footnotes TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2017-10-19