MOS M2006C (PTY) LTD. PIR Motion Detector Microsystems On Silicon Member of ELMOS Semiconductor AG General Description___________ Applications_________________ The M2006C integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) motion detector. ♦ ♦ ♦ ♦ A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. PIR motion detection Intruder detection Occupancy detection Motion sensor lights Features_____________________ One or two PIR sensors connect directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. The PIR signal is converted to a 15 bit digital value. ♦ Digital signal processing ♦ On chip supply regulator with wide operating voltage range ♦ Low power consumption ♦ Temperature compensation input ♦ Differential PIR sensor input ♦ Selectable relay output polarity ♦ Selectable pulse count and timing algorithm for motion detection The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to VDD, VSS or leaving them open. The voltage level on the temperature compensation input is converted to a digital value with 4 bit resolution. All signal processing is performed digitally. Single Sensor Application Circuit________________________________ VSS C1 U1 14 VSSA VB D1 10 Supply C2 11 12 IRA1 VDDA PIRIN LED RELAY 13 NPIRIN VDD T hre shold /Sensitivity PT0 5 PT1 P ulse C ount DP0 DP1 T ime Window DT0 DT1 4 OSC PT0 SENS 16 RE1 19 Alarm 2 VDD R1 1 N ear 3 S2 Far DP0 TEST DP1 VSS 8 9 C3 18 0V VSS 7 6 DT0 DT1 M2006C www.mos.co.za R2 PT1 RPOL 17 Alarm L1 20 TCOMP 15 VDD R3 N1 NTC R4 R5 Rev. 1.1 MOS M2006C PIR Motion Detector (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG Electrical Characteristics_______________________________________ Absolute Maximum Ratings Parameter Voltage on pins VB, RELAY, LED Current into any pin Storage Temperature Symbol Min VDD Max Unit Remarks 19 100 125 V mA °C One pin at a time -0.3 -100 -45 Tst Table 1: Electrical Characteristics (Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect the device reliability. ESD protection: all pins will be able to withstand a discharge of a 100pF capacitor charged to 1.6kV through a 1500Ω series resistor. Test method: MIL-STD-883D method 3015). Operating Conditions (T=25°C, VDD=5V, unless stated otherwise) Parameter Symbol Temperature Operating temperature range Min Typ -25 Regulator Supply voltage VB Supply current IDD Regulator output voltage VDD 4.8 3.6 Max Unit 70 °C 18 V 200 µA 4.4 V Remarks VB=12V Outputs unloaded Digital Inputs, Schmitt Triggers (DP0/1, PT0/1, DT0/1, SENS, TEST, RPOL) Input low voltage VIL 20 %VDD Input high voltage VIH 80 %VDD Pull down current on TEST 50 µA input to VDD Digital Outputs RELAY sink capability (open drain) IOL 25 mA VOL<1V LED IOL 5 mA VOL<1V sink capability (open drain) TCOMP Input Input voltage range 0 VDD Input leakage current -1 1 PIRIN / NPIRIN Inputs PIRIN /NPIRIN input resistance to VSS 60 PIRIN input DC voltage range 0.2 PIRIN input AC voltage µA kΩ 1.5 V 5 mV Oscillator and Filter LPF cutoff frequency 7 Hz HPF cutoff frequency 0.44 Hz 64 kHz Oscillator frequency FCLK Peak-to-peak R1 as per table 7 Table 2: Operating Conditions www.mos.co.za Page 2 of 5 Rev. 1.1 MOS M2006C PIR Motion Detector (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG Detailed Description___________________________________________ VSSA VDD VSS TC O MP RPO L LED PI RIN In put A mplifier A /D C onv er ter NPIR IN Band Pass Filter Temperature O utp ut C ompensation Driv er RELA Y VSSA SENS PT0 VB Voltage Regu lator A larm Ev ent O scillator PT1 Pr ocessor DP0 DP1 VDDA O SC VSSA Voltage Regulator The on-chip series regulator can accept a large variety of supply voltages, and generates a stable 4V supply for the internal circuitry. The VDD pin requires a bypass capacitor to VSS. Oscillator The IC contains an on chip low power oscillator. The frequency is set to about 64kHz by selecting the correct resistor between OSC and VDD. The timing signals and cutoff frequencies of the digital filters are derived from this frequency. PIR Sensor Input A differential input stage allows for up to 2 PIR sensors to be connected. The PIRIN and NPIRIN inputs have an internal pull-down resistor. The analog to digital converter generates a digital signal from the voltage level measured between the PIRIN and NPIRIN pins. DT0 DT1 TEST If immediate alarm mode (alarm on 1 pulse count) is selected, then the RELAY output is activated on every pulse, for the duration, selected by DT0 and DT1. If TRUE-ROLLTM alarm mode (alarm on more than 1 pulse) is selected, a minimum number of pulses, selected with DT1 and DT0, would have to appear, within the selected TRUE-ROLLTM time window. The RELAY output will remain activated as long as the alarm condition is present. The RELAY activation time TM is the same as the TRUE-ROLL time window. The polarity of the relay output (i.e. active high or active low), can be selected with the RPOL pin. RPOL Relay Output 0 1 Active low Active high Band-Pass Filter Table 3: Relay output polarity A 2nd order low-pass filter with a cut-off frequency of 3.5Hz eliminates unwanted higher frequency nd components. This signal is then passed to a 2 order high pass filter with a 0.5Hz cut-off frequency. The pins to select the sensitivity threshold, the TRUETM ROLL time window and the PULSE count are typically hard wired by the PIR motion detector manufacturer. The SENS input allows for a jumper, which offers a sensitivity adjustment on site. Alarm Event Processor The signal from the band pass filter is firstly rectified. When the signal level exceeds the selected sensitivity threshold, an internal pulse is generated and the open drain LED output transistor is switched on. The LED output remains activated while the signal is above the selected sensitivity threshold. www.mos.co.za Page 3 of 5 The conditions required to raise an alarm, are controlled by the following digital inputs. These inputs must be connected to VDD (‘1’), VSS (‘0’) or left open (Z), as indicated in table 4. Rev. 1.1 MOS M2006C PIR Motion Detector (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG Pin Name Description PT1 PT0 0 0 0 Z Z Z 1 1 DP1 0 Z 1 0 Z 1 0 Z/1 DP0 Selects the PIR controller’s sensitivity threshold. x 1 most sensitive x 2 x 4 x 8 x 16 x 32 x 64 x 128 least sensitive Selects the amount of pulses required for an alarm condition. 1 immediate alarm mode TM 2 TRUE-ROLL 3 alarm 4 mode 0 0 1 1 0 1 0 1 DT1 DT0 0 0 1 1 0 1 0 1 SENS Selects the window 2s 4s 8s 16 s TRUE-ROLLTM TCOMP: Temperature compensation input pin. A temperature dependent resistor network may be connected to this pin to generate voltages between VDD*16/128 and VDD*31/128. The voltage on this pin must decrease as the temperature increases. At 37°C, the voltage should be between VDD*19/128 and VDD*20/128. Internally, a TCOMP factor is selected, based on this pin voltage. This factor is multiplied with the sensitivity threshold. Table 5 shows the dependency of the pin voltage and the TCOMP factor used by the alarm event processor. time Pin voltage/ VDD TCOMP factor Pin voltage/ VDD TCOMP Factor <16/128 17/128 18/128 19/128 20/128 21/128 22/128 23/128 7/8 6/8 5//8 4/8 4/8 5/8 6/8 7/8 24/128 25/128 26/128 27/128 28/128 29/128 30/128 >31/128 8/8 9/8 10/8 11/8 12/8 13/8 14/8 15/8 Table 5: Temperature compensation factor When connected to VDD, the currently selected threshold is doubled Table 4: Alarm event processor input settings TM Example of TRUE-ROLL time window set to 4s and pulse count to 3. PIR LED WINDOW 4s 4s 4s 4s 4s RELAY www.mos.co.za Page 4 of 5 Rev. 1.1 MOS M2006C PIR Motion Detector (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG Device Pin Out________________________________________________ Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Name Description OSC VDD SENS PT1 PT0 DT1 DT0 RPOL TEST VB VDDA PIRIN NPIRIN VSSA TCOMP DP1 DP0 VSS RELAY LED Oscillator frequency setting Regulated supply voltage Range select Sensitivity selection Sensitivity selection TRUE-ROLLTM time window select TRUE-ROLLTM time window select RELAY Pin polarity selection Reserved, connect to VSS Unregulated supply voltage Regulated supply voltage, only connect PIR element to this pin PIR sensor input Negative PIR sensor input Negative supply voltage, only connect PIR element to this pin Temperature Compensation Input Pulse count selector Pulse count selector Negative supply voltage Relay Output (open drain) LED Output (open drain) Table 6: Device Pin Out Component Values____________________________________________ Designator Description R1 R2 R3 R4 R5 N1 C1 C2, C3 D1 IRA 390kΩ 1.2kΩ 180kΩ 33kΩ 18kΩ 47kΩ NTC 10µF/25V, electrolytic 820nF, ceramic 1N4007, optional protection diode LHI 878, PIR sensor Table 7: Component Values for Application Circuit Contact Information___________ Ordering Information__________ Microsystems On Silicon (PTY) Ltd. Pretoria, South Africa Tel: +27 (12) 348 8367 Fax: +27 (12) 348 1790 Email: [email protected] Visit our website for the latest information M2006C-DIP20 (20 pin Dual-in-line plastic) M2006C-SO20-300 (20 pin Surface mount, 300 mil) www.mos.co.za Other packages are available on request. Page 5 of 5 Rev. 1.1