Infineon IGW40N65F5A High speed switching series fifth generation Datasheet

IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGW40N65F5A
650VIGBT
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Batterycharger
•DC/DCconverter
1
Packagepindefinition:
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
IGW40N65F5A
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
40A
1.6V
175°C
G40EF5A
PG-TO247-3
2
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
74.0
46.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
120.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
120.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
250.0
125.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
2)
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.60
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.60
1.80
1.90
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.40mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
40.0
1000.0
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=40.0A
-
50.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
1)
2)
V
V
Defined by design. Not subject to production test.
Package not recommended for surface mount applications
4
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
2500
-
-
50
-
-
9
-
-
95.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=40.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
11
-
ns
-
165
-
ns
-
13
-
ns
-
0.35
-
mJ
-
0.10
-
mJ
-
0.45
-
mJ
-
18
-
ns
-
4
-
ns
-
175
-
ns
-
12
-
ns
-
0.07
-
mJ
-
0.03
-
mJ
-
0.10
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
12
-
ns
-
195
-
ns
-
5
-
ns
-
0.46
-
mJ
-
0.16
-
mJ
-
0.62
-
mJ
-
16
-
ns
-
5
-
ns
-
225
-
ns
-
13
-
ns
-
0.14
-
mJ
-
0.05
-
mJ
-
0.19
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
275
80
250
70
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
225
200
175
150
125
100
75
60
50
40
30
20
50
10
25
0
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
100
125
150
175
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
120
120
100
100
VGE = 20V
IC,COLLECTORCURRENT[A]
VGE = 20V
IC,COLLECTORCURRENT[A]
75
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
18V
80
15V
12V
60
10V
8V
7V
40
6V
18V
80
15V
12V
60
10V
8V
7V
40
6V
5V
5V
20
0
50
20
0
1
2
3
4
0
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=150°C)
7
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
120
2.50
VCEsat,COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=150°C
IC,COLLECTORCURRENT[A]
100
80
60
40
20
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
8.5
IC=10A
IC=20A
IC=40A
0
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
75
100
125
150
175
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
50
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
1000
100
10
1
25
Tvj,JUNCTIONTEMPERATURE[°C]
0
20
40
60
80
100
10
1
120
IC,COLLECTORCURRENT[A]
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
100
5
15
25
35
45
55
65
75
85
rG,GATERESISTOR[Ω]
8
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
1000
5.5
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
175
typ.
min.
max.
0
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,DynamictestcircuitinFigure
E)
75
100
125
150
1.6
Eoff
Eon
Ets
Eoff
Eon
Ets
1.4
E,SWITCHINGENERGYLOSSES[mJ]
7
E,SWITCHINGENERGYLOSSES[mJ]
50
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.4mA)
8
6
5
4
3
2
1
0
25
Tvj,JUNCTIONTEMPERATURE[°C]
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
0.0
120
IC,COLLECTORCURRENT[A]
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
5
15
25
35
45
55
65
75
85
rG,GATERESISTOR[Ω]
9
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
0.8
1.0
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25
50
75
100
125
150
0.0
200
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
300
350
400
450
500
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
16
1E+4
VCC=130V
VCC=520V
Cies
Coes
Cres
14
12
1000
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
250
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
8
6
4
100
10
2
0
0
20
40
60
80
1
100
QGE,GATECHARGE[nC]
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge
(IC=40A)
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
10
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]:
7.3E-5
7.0E-4
0.01235548 0.08020881
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
PG-TO247-3
12
Rev.2.1,2014-12-15
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
13
Rev.2.1,2014-12-15
IGW40N65F5A
High speed switching series fifth generation
Revision History
IGW40N65F5A
Revision: 2014-12-15, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-12-15
Final data sheet
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Published by
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
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endangered.
14
Rev. 2.1, 2014-12-15
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