Thinki GF2045MC 20.0 ampere surface mount photovoltaic bypass schottky barrier rectifier Datasheet

®
GF2045MC thru GF20200MC
Pb
GF2045MC thru GF20200MC
Pb Free Plating Product
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
D 2PAK
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
Highotemperature soldering guaranteed:
260 C/10 seconds at terminals
Mechanical Data
2
Cases: JEDEC D PAK /TO-263-2L molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at TC=135 C
Peak Repetitive Forward Current (Rated VR, Square Wave,
o
20KHz) at Tc=135 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Symbol GF2045MC GF2060MC GF20100MC GF20200MC Units
VRRM
VRMS
VDC
I(AV)
45
31
45
IFSM
IRRM
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage
@ Tc=125℃
IR
0.1
15
dV/dt
Typical Junction Capacitance
Cj
RθJC
TJ
TSTG
Storage Temperature Range
Notes:
V
V
V
A
20
A
150
0.57
0.84
0.72
Voltage Rate of Change, (Rated VR)
200
140
200
20
A
1.0
VF
Operating Junction Temperature Range
100
70
100
IFRM
Maximum Instantaneous Forward Voltage at (Note 2)
O
IF=10A, TC=25 C
IF=10A, TC=125OC
IF=20A, TC=25OC
IF=20A, TC=125OC
Typical Thermal Resistance Per Leg (Note 3)
60
42
60
0.5
A
0.99
0.87
1.23
1.10
0.85
0.75
0.95
0.85
0.80
0.70
0.95
0.85
0.1
10
10,000
400
5.0
320
1.0
2.0
-65 to +150
-65 to +175
V
mA
mA
V/uS
pF
o
C/W
o
C
o
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
®
GF2045MC thru GF20200MC
FIG.1- FORWARD CURRENT DERATIN
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
20
PEAK FORWARD SURGE CURRENT. (A)
150
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
16
12
8
4
0
0
50
100
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
125
100
75
50
25
0
150
1
10
o
CASE TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
40
Tj=150 0C
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
10
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
10
1
Tj=25 0C
0.1
GF2045MC
GF2060MC
GF20100MC
GF20200MC
Tj=1250C
1
Tj=75 0C
0.1
0.01
Tj=250C
Pulse Width=300 s
1% Duty Cycle
0.01
0
0.1
0.2
0.3 0.4
0.5
0.001
0.6 0.7 0.8 0.9 1.0 1.1 1.2
TRANSIENT THERMAL IMPEDANCE. ( OC/W)
JUNCTION CAPACITANCE.(pF)
20
40
60
140
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
2,000
1,000
500
200
GF2045MC
GF2060MC-GF20200MC
100
1.0
0
GF2045MC
GF2060MC-GF20100MC
GF20200MC
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
0.1
100
NUMBER OF CYCLES AT 60Hz
10
REVERSE VOLTAGE. (V)
100
100
10.0
1
0.1
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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