CYStech Electronics Corp. 30Amp. Schottky Barrier Rectifiers MBR30150E3 IF(AV) VRRM Tj VF(MAX) Spec. No. : C478E3 Issued Date : 2009.12.29 Revised Date : Page No. : 1/4 2 × 15A 150V 175°C 0.75V Features • 175℃ operating junction temperature • Low VF and low IR type • Metal silicon junction, major carrier conduction • 30A total (15A per diode leg) • Guardring for over voltage protection • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed : 260℃/10s, 0.25”(6.35mm) from case • For use in low voltage, high frequency inverters, free wheeling, and polarity protection application • RoHS compliant package Mechanical Data • Case: JEDEC TO-220AB molded plastic • Mounting Position: Any • Weight: 0.08 ounce, 2.24 grams • Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026 • Epoxy: UL 94V-0 rate flame retardant • Mounting Torque : 5 in-lbs max Equivalent Circuit MBR30150E3 Outline TO-220AB AKA MBR30150E3 CYStek Product Specification Spec. No. : C478E3 Issued Date : 2009.12.29 Revised Date : Page No. : 2/4 CYStech Electronics Corp. Maximum Ratings and Electrical Characteristics (Per Diode Leg) (Rating at 25°C ambient temperature unless otherwise specified. resistive or inductive load. Single phase, half wave, 60Hz, For capacitive load, derate current by 20%.) Parameter Maximum Recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage IF=15A, TC=25℃ Maximum instantaneous IF=15A, TC=125℃ forward voltage at IF=30 A, TC=25℃ Symbol VRRM VRMS VDC Min. Typ. Max. 150 105 150 Units V V V VF 0.92 0.75 1 0.86 IF(AV) 15 30 A IFSM 180 A Peak repetitive reverse surge current, TJ<175℃ (Note 1 ) VR=150 V, TC=25℃ Maximum instantaneous reverse current at VR=150 V, TC=125℃ IRRM Voltage rate of change, (rated VR) dV/dt 4 5 10 10,000 A μA mA V/μs (Note 1) IF=30A, TC=125℃ Maximum Average forward rectified Per Diode current @ TC=130℃ Per Device Non-repetitive peak forward surge current @ 8.3ms single half sine wave superimposed on rated load (JEDEC method) Typical junction capacitance @ f=1MHz and applied 5V reverse voltage ESD susceptibility (Note 2) Storage temperature range Operating junction temperature range IR CJ Tstg TJ 230 V pF 8000 +175 +175 -65 -65 V ℃ ℃ Notes : 1. 2.0μs pulse width, f=1.0kHz 2. Human body model, 1.5kΩ in series with 100pF Thermal Data Parameter Maximum Thermal Resistance, Junction-to-case Maximum Thermal Resistance, Junction-to-ambient Symbol Rth,j-c Rth,j-a Value 1.7 45 Unit °C/W °C/W Ordering Information Device MBR30150E3 MBR30150E3 Package TO-220AB (RoHS compliant package) Shipping 50 pcs / Tube, 40 Tubes/Box CYStek Product Specification CYStech Electronics Corp. Spec. No. : C478E3 Issued Date : 2009.12.29 Revised Date : Page No. : 3/4 Typical Characteristics Forward Current vs Forward Voltage Forward Current Derating Curve 100000 Instantaneous Forward Current---IF(mA) Average Forward Current---Io(A) 16 14 12 10 8 6 resistive or inductive load per leg 4 Per leg 10000 Tj=150℃ 1000 Tj=25℃ 100 10 Pulse width=300μs, 1% Duty cycle 2 1 0 0 25 50 75 100 125 150 Case Temperature---TC(℃) 175 0 200 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage---VF(V) Junction Capacitance vs Reverse Voltage Reverse Leakage Current vs Reverse Voltage 1000 1000 Reverse Leakage Current---I R(μA) Junction Capacitance---C J(pF) 0.2 100 Tj=25℃, f=1.0MHz Per Leg Per leg 100 Tj=125℃ 10 1 Tj=75℃ 0.1 0.01 Tj=25℃ 0.001 10 0.1 1 10 Reverse Voltage---VR(V) MBR30150E3 100 0 20 40 60 80 100 120 Reverse Voltage---VR (V) 140 160 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C478E3 Issued Date : 2009.12.29 Revised Date : Page No. : 4/4 TO-220AB Dimension Marking: A B D E C CYS 30150 Device Name □□ H K M I Date Code 3 G N 2 1 4 O P 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 Style: Pin 1.Anode 2.Cathode 3.Anode *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MBR30150E3 CYStek Product Specification