HCN4403(PNP) SWITCHING TRANSISTOR REPLACEMENT TYPE : 2N4403 FEATURES Power Dissipation TO-92 MAXIMUM RATINGS (T A=25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage 1:EMITTER Value Unit VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Collector Power Dissipation PC 0.625 W Junction Temperature TJ 150 °C 200 °C/W -55~+150 °C Thermal Resistance Junction to Ambient RӨJA Storage Temperature Tstg 2:BASE 3:COLLECTOR ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage VCBO IC=-100uA, IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0 -40 V Emitter-Base Breakdown Voltage VEBO IE=-100uA , IC=0 -5 V Collector Cut-off Current ICBO VCB=-35V , IE=0 -100 nA Emitter Cut-off Current IEBO VEB=-5V , IC=0 -100 nA hFE(1) VCE=-1V , IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-2V,IC=-150mA 100 hFE(5) VCE=-2V,IC=-500mA 20 VCE(sat)1 IC=-150mA , IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA , IB=-15mA -0.95 V VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Collector Output Capacitance COB VCB=-10V,IE=0,f=1MHz 8.5 pF Transition Frequency fT VCE=-10V,IC=-20mA,f=100MHz Delay Time tD Rise Time tR Storage Time tS Fall Time tF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD -0.75 Typ Max Unit 300 200 MHz 15 nS VCC=-30V, IC=-150mA 20 nS IB1=- IB2=-15mA 225 nS 30 nS E-mail:[email protected] 1/4 HCN4403(PNP) SWITCHING TRANSISTOR Typical Characteristics hFE Static Characteristic 1000 -200 COMMON EMITTER Ta=25ć -1mA -0.9mA -0.8mA -0.7mA -150 -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 —— IC COMMON EMITTER VCE=-2V Ta=100ć DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -250 Ta=25ć 100 -0.2mA IB=-0.1mA 10 -0 -0 -2 -4 VCEsat -700 —— -1 -6 COLLECTOR-EMITTER VOLTAGE VCE IC IC (mA) IC —— β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -600 -100 VBEsat -1.2 β=10 -300 Ta=100ć -100 Ta=25ć -30 -10 -3 -1 -10 COLLECTOR CURRENT (V) -10 -100 -30 COLLECTOR CURRENT IC —— IC Ta=25ć -0.8 Ta=100ć -0.4 -0.0 -1 -600 -3 (mA) -10 -100 -30 COLLECTOR CURRENT VBE Cob/ Cib —— IC -600 (mA) VCB/ VEB 50 -600 f=1MHz IE=0/IC=0 Ta=25ć Cib -100 CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-2V Ta=100ć -10 Ta=25ć -1 -0.1 -0.0 -0.4 -0.8 Cob 10 1 -0.1 -1.2 -1 fT —— -10 REVERSE VOLTAGE BASE-EMITER VOLTAGE VBE (V) IC PC 750 -600 —— V -30 (V) Ta Ta=25ć COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) VCE=-10V -100 -10 625 500 375 250 125 0 -1 -10 -3 COLLECTOR CURRENT IC (mA) ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD -30 0 25 50 75 AMBIENT TEMPERATURE E-mail:[email protected] 100 T 125 150 (ć ) 2/4 HCN4403(PNP) SWITCHING TRANSISTOR TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min. Max. 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP. 2.440 2.640 14.100 14.500 1.600 0.000 0.380 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD Dimensions In Inches Min. Max. 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP. 0.096 0.104 0.555 0.571 0.063 0.000 0.015 E-mail:[email protected] 3/4 HCN4403(PNP) SWITCHING TRANSISTOR TO-92 Package Tapeing Dimension ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 4/4