Renesas BCR20AM-12LB-A8 Triac medium power use (the product guaranteed maximum junction temperature of 150â°c) Datasheet

BCR20AM-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0458-0300
Rev.3.00
Nov 30, 2007
Features
• Non-Insulated Type
• Planar Passivation Type
• IT (RMS) : 20 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
3
1
12
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
3
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0458-0300
Page 1 of 7
Rev.3.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
20
Unit
A
Surge on-state current
ITSM
200
A
I2 t
167
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 134°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0/3.0
1.5
Unit
mA
V
Test conditions
Tj = 125°C/150°C, VDRM applied
Tc = 25°C, ITM = 30 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30Note6
30Note6
30Note6
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
0.8
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –10 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0458-0300
Page 2 of 7
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
10
7
5
3
2
240
2
10
7
5
3
2
Tj = 150°C
1
10
7
5
3
2
Tj = 25°C
Surge On-State Current (A)
On-State Current (A)
3
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
120
80
40
0 0
10
2 3
5 7 101
2 3
5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
10
7
5
3 VGT = 1.5V
2
PGM = 5W
IGM =
2A
IFGT I, IRGT I, IRGT III
10–1
VGD = 0.1V
7
5 1
2
10 2 3 5 710 2 3 5 7103 2 3 5 7104
102
7
5
3
2
1
10
7
5
3
2
Typical Example
IFGT I
IRGT I
IRGT III
0
10
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
2
10
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G0458-0300
Page 3 of 7
103
7
5
3
2
Gate Current (mA)
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
100
7
5
3
2
PG(AV) =
0.5W
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
1
Gate Voltage (V)
160
On-State Voltage (V)
5
3
2
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
200
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Conduction Time (Cycles at 60Hz)
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Allowable Case Temperature vs.
RMS On-State Current
40
30 360° Conduction
Resistive,
inductive loads
20
10
120 Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
inductive loads
5
10
15
20
25
0
0
30
5
10
15
20
25
30
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
140
160 × 160 × t2.3
100 × 100 × t2.3
120
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
5
10
15
20
25
160
Ambient Temperature (°C)
160
Ambient Temperature (°C)
140
20 Resistive,
0
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
160
140
120
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
30
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
3 Typical Example
2
5
10
7
5
3
2
4
10
7
5
3
2
3
10
7
5
3
2
2
10
–60 –40–20 0 20 40 60 80 100 120 140 160
REJ03G0458-0300
Page 4 of 7
Junction Temperature (°C)
Rev.3.00
Nov 30, 2007
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
1
10
7
5
3 T2+, G+
Typical Example
2
T2–, G–
0
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
160
Typical Example
Tj = 150°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
2
10
7
5
3
2
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
3
2
Minimum
Characteristics
Value
0
10
7
3
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
5
7 10
1
2
3
5
7 10
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G0458-0300
Page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
160
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Latching Current (mA)
3
10
7
5
3
2
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
Rev.3.00
Nov 30, 2007
2
10
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
I Quadrant
III Quadrant
3
2
Minimum
Characteristics
Value
0
10
7
3
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
5
7 10
1
2
3
5
7 10
Rate of Decay of On-State
Commutating Current (A/ms)
2
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
Typical Example
IRGT I
IRGT III
3
2 IFGT I
102
7
5
3
2
101 0
10
2 3
5 7 101
5 7 102
2 3
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
REJ03G0458-0300
Page 6 of 7
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
330Ω
Rev.3.00
Nov 30, 2007
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
Previous Code

RENESAS Code
PRSS0004AA-A
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
REJ03G0458-0300
Page 7 of 7
Rev.3.00
Nov 30, 2007
Standard order
code example
BCR20AM-12LB
BCR20AM-12LB-A8
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