BWTECH BWS-67-80-TS5 93mil 120v trench schottky wafer Datasheet

BWS-93-120-TS5!
93mil 120V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
2,362
93
Ay
Die Size
2,362
93
Bx
Metal Pad
2,158
85
By
Metal Pad
2,158
85
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
2818
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
IFAV
Average Forward current
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
125
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
215
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
120
Voltage
5
Amp
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.48
0.53
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.54
0.58
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.49
0.53
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
22
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
20
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-93-100-TS5!
93mil 100V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
2,362
93
Ay
Die Size
2,362
93
Bx
Metal Pad
2,158
85
By
Metal Pad
2,158
85
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
2818
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
IFAV
Average Forward current
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
105
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
215
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
100
Voltage
5
Amp
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.46
0.50
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.52
0.56
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.46
0.52
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
15
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
14
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-80-120-TS5!
80mil 120V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
2,032
80
Ay
Die Size
2,032
80
Bx
Metal Pad
1,828
72
By
Metal Pad
1,828
72
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
3799
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
IFAV
Average Forward current
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
125
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
160
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
120
Voltage
5
Amp
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.51
0.55
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.60
0.64
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.52
0.58
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
18
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
18
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-80-100-TS5!
80mil 100V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
2,032
80
Ay
Die Size
2,032
80
Bx
Metal Pad
1,828
72
By
Metal Pad
1,828
72
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
3799
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
IFAV
Average Forward current
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
105
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
160
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
100
Voltage
5
Amp
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.49
0.52
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.54
0.58
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.50
0.54
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
15
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
10
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-80-80-TS5!
80mil 80V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
2,032
80
Ay
Die Size
2,032
80
Bx
Metal Pad
1,828
72
By
Metal Pad
1,828
72
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
3799
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
80
Voltage
IFAV
Average Forward current
5
Amp
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
85
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
160
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.46
0.49
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.51
0.55
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.44
0.48
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
15
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
10
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-B9-80-TS5!
119mil 80V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
3,023
119
Ay
Die Size
3,023
119
Bx
Metal Pad
2,819
111
By
Metal Pad
2,819
111
T/min
Thickness/min
279
11
T/max
Thickness/max
279
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
Gross Die
80
3
2818
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
80
Voltage
IFAV
Average Forward current
20
Amp
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
85
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
320
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 5A, 25°C
0.43
0.47
V
VF2
Maximum Instantaneous Forward voltage at 20A, 25°C
0.58
0.63
V
VF1H
Maximum Instantaneous Forward voltage at 5A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 20A, 125°C
IR1
IR1H
V
0.49
0.53
V
Maximum Instantaneous Reverse current at VR=120V,
25°C
22
100
uA
Maximum Instantaneous Reverse current at VR=120V,
125°C
20
50
mA
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2014
BWS-67-100-TS5!
67mil 100V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
1,702
67
Ay
Die Size
1,702
67
Bx
Metal Pad
1,473
58
By
Metal Pad
1,473
58
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
5379
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
IFAV
Average Forward current
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
105
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
120
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
100
Voltage
5
Amp
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.53
0.56
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.61
0.65
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.56
0.60
V
IR1
Maximum Instantaneous Reverse current at VR=120V,
25°C
9
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=120V,
125°C
5
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013
BWS-67-80-TS5!
67mil 80V Trench Schottky Wafer
DIM
DESCRIPTION
UM
MIL
Ax
Die Size
1,702
67
Ay
Die Size
1,702
67
Bx
Metal Pad
1,473
58
By
Metal Pad
1,473
58
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal
TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
Gross Die
3
5379
Electrical Characteristics
SYMBOL
DESCRIPTION
SPEC
UNIT
VRRM
DC Blocking Voltage
80
Voltage
IFAV
Average Forward current
5
Amp
VB MIN
Minimum Breakdown Voltage at 1.0mA, 25°C
85
Voltage
IFSM
Nonrepetitive Peak Surge Current-half sine-wave
60hz
120
Amp
TJ
Operation Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
Parameters Rating
SYMBOL
DESCRIPTION
TYPICAL
SPEC
UNIT
VF1
Maximum Instantaneous Forward voltage at 3A, 25°C
0.48
0.53
V
VF2
Maximum Instantaneous Forward voltage at 5A, 25°C
0.53
0.56
V
VF1H
Maximum Instantaneous Forward voltage at 3A, 125°C
VF2H
Maximum Instantaneous Forward voltage at 5A, 125°C
0.49
0.53
V
IR1
Maximum Instantaneous Reverse current at VR=800V,
25°C
6
100
uA
IR1H
Maximum Instantaneous Reverse current at VR=80V,
125°C
5
50
mA
V
NOTE
1
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
2
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
3
Data sheet information is subjected to change without notice.
4
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2014
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