Luguang DCR1478SV48 Phase control thyristor Datasheet

DCR3030V42
Phase Control Thyristor
FEATURES
KEY PARAMETERS

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
4200V
3030A
40600A
1500V/µs
400A/µs
* Higher dV/dt selections available

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
DCR3030V42
DCR3030V40
DCR3030V35
DCR3030V30
4200
4000
3500
3000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 200mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3030V42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Outline type code: V
(See Package Details for further information)
Fig. 1 Package outline
DCR3030V42
Phase Control Thyristor
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
3030
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4760
A
Continuous (direct) on-state current
-
4550
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
40.6
kA
VR = 0
8.24
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.00746
°C/W
Single side cooled
Anode DC
-
0.0130
°C/W
Cathode DC
-
0.0178
°C/W
Double side
-
0.002
°C/W
-
0.004
°C/W
-
125
°C
Clamping force 54kN
(with mounting compound)
(blocking)
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
48.0
59.0
kN
DCR3030V42
Phase Control Thyristor
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
200
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
400
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
200A to 1700A at Tcase = 125°C
-
0.82
V
Threshold voltage – High level
1700A to 7000A at Tcase = 125°C
-
0.98
V
On-state slope resistance – Low level
200A to 1700A at Tcase = 125°C
-
0.292
m
On-state slope resistance – High level
1700A to 7000A at Tcase = 125°C
-
0.198
m
TBD
TBD
µs
250
500
µs
1600
3500
µC
Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
Tj = 125°C, dI/dt – 1A/µs, VR pk =3000V,
VRM= 1700V
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
DCR3030V42
Phase Control Thyristor
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
1.5
V
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
VGD
Gate non-trigger voltage
At VDRM, Tcase = 125°C
TBD
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
VDRM = 5V, Tcase = 25°C
TBD
mA
CURVES
Instantaneous on-state currentTI - (A)
7000
min 125°C
max 125°C
25°C
max 25°C
6000
5000
4000
3000
2000
1000
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V T - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.866995
B = -0.042053
C = 0.000100
D = 0.014062
these values are valid for Tj = 125°C for IT 500A to 10000A
DCR3030V42
Phase Control Thyristor
16
130
Mean power dissipation - (kW)
o
14
Maximum case temperature, T case ( C )
180
120
90
60
30
12
10
8
6
4
2
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0
1000
2000
3000
4000
0
5000
1000
2000
3000
4000
5000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
120
110
12
11
100
Mean power dissipation - (kW)
o
Maximum heatsink temperature, THeatsink - ( C)
130
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
2
10
1
0
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
d.c.
180
120
90
60
30
3
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
DCR3030V42
130
130
d.c.
180
110
90
90
60
80
30
180
110
120
100
d.c.
120
o
120
Maximum heatsik temperature hTeatsink - ( C)
Maximum permissible case temperature ,case
T - (°C)
Phase Control Thyristor
70
60
50
40
30
20
10
0
120
100
90
90
60
80
30
70
60
50
40
30
20
10
0
0
2000
4000
6000
8000
0
Mean on-state current, IT(AV) - (A)
1000
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Anode side cooled
14
5000
6000
Cathode side cooled
2
1.8299
3
3.4022
4
1.3044
0.0076807
0.0579454
0.4078613
1.2085
0.9032
1.6719
3.0101
7.4269
0.0075871
0.0536531
0.3144537
5.624
0.9478
2.0661
1.6884
13.0847
0.0078442
0.0645541
0.3894389
4.1447
Ri (°C/kW)
Ti (s)
Double Side
Cooling
Anode Side
Cooling
Cathode
Sided Cooling
16
4000
1
0.9206
Ri (°C/kW)
Ti (s)
20
18
3000
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
Thermal Impedance , Zth(j-c) - ( °C/kW)
2000
Mean on-state current, IT(AV) - (A)
Ri (°C/kW)
Ti (s)
Zth =  [Ri x ( 1-exp. (t/ti))]
[1]
12
Rth(j-c) Conduction
10
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
8
Double side cooling
Zth (z)
6
°
180
120
90
60
30
15
4
2
00.001
0.01
0.1
1
10
sine.
1.34
1.57
1.83
2.08
2.27
2.36
rect.
0.88
1.30
1.54
1.81
2.11
2.28
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.34
1.57
1.84
2.08
2.28
2.37
rect.
0.88
1.30
1.54
1.81
2.11
2.28
100
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.33
1.57
1.83
2.07
2.26
2.35
rect.
0.88
1.29
1.53
1.80
2.10
2.26
DCR3030V42
Phase Control Thyristor
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
600
18000
QSmax =
16000
3397.4*(di/dt)0.5061
Stored Charge, QS - (uC)
Reverse recovery current, IRR - (A)
500
14000
QSmin =
1357.3*(di/dt)
12000
0.6271
IRRmax =
48.236*(di/dt)0.7553
400
10000
IRRmin
300
8000
6000
Conditions:
Tj = 125oC
VRpeak ~ 2500V
VRM ~ 1700V
snubber as appropriate to
control reverse voltages.
4000
2000
29.853*(di/dt)0.8222
200
Conditions:
o
Tj=125 C
VRpeak ~ 2500V
VRM ~ 1700V
snubber as approriate to control
reverse voltages
100
0
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
30
=
0
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig. 12 Stored Charge
Fig. 13 Reverse Recovery Current
30
DCR3030V42
Phase Control Thyristor
Pulse
Width us
100
200
500
1000
10000
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
7
8
9
10
DCR3030V42
Phase Control Thyristor
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Ø110.0 MAX.
Ø73.0 NOM.
Ø1.5
CATHODE
Device
DCR1474SV18
DCR1475SV28
DCR1476SV42
DCR1478SV48
DCR1574SV28
DCR1575SV42
DCR1576SV52
DCR4060V22
DCR3780V28
DCR3030V42
DCR2720V52
DCR2290V65
DCR1910V85
GATE
ANODE
Ø73.0 NOM.
FOR
PACKAGE
HEIGHT
NOMINAL
WEIGHT
1160g
SEE TABLE
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: V
Fig.16Package outline
Maximum Minimum
Thickness Thickness
(mm)
(mm)
27.265
26.515
27.34
26.59
27.57
26.82
27.69
26.94
27.34
26.59
27.57
26.82
27.69
26.94
27.265
26.515
27.34
26.59
27.57
26.82
27.69
26.94
27.95
27.2
28.31
27.56
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