Foshan MJE13003DG1 Silicon npn transistor in a to-92 plastic package. Datasheet

MJE13003DG1
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征
/ Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.
用途
/
Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications, converters, inverters, switching regulators, etc.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:Base
PIN 2:Collector
PIN 3:Emitter
放大及印章代码
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13003DG1
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
600
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
1.3
A
Collector Power Dissipation
PC
1.0
W
Junction Temperature
Tj
150
℃
Tsag
-55~150
℃
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=1mA
IE=0
600
V
VCEO
IC=10mA
IB=0
400
V
Emitter Base Cut-Off Current
VEBO
IE=1mA
IC=0
9.0
V
Collector Cut-Off Current
ICBO
VCB=600V
IE=0
0.1
mA
Collector cut-off current
ICEO
VCE=400V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
hFE(1)
VCE=5V
IC=200mA
10
hFE(2)
VCE=5V
IC=1mA
7
hFE(3)
VCE=5V
IC=1.2A
5
VCE(sat)(1)
IC=500mA
IB=100mA
0.5
V
VCE(sat)(2)
IC=1.0A
IB=500mA
0.6
V
IC=500mA
IB=100mA
1.2
V
IC=0.25A
0.8
μS
3.5
μS
IC=0.1A
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
VBE(sat)
Fall time
tf
Storage time
ts
VCE=5V
(UI9600)
Transition Frequency
fT
VCE=10V
f=1MHz
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5
40
MHz
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MJE13003DG1
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
SOA(DC)
PC-TC
hFE-Ic
hFE-Ic
Vces-IC
Vbes-IC
tS-Ta
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hFE-Ta
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MJE13003DG1
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MJE13003DG1
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
13003D
G1
****
说明:
BR:  

为公司代码
13003D:
为型号代码
G1: 

规格代码
****:

为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
13003D:
Product Type.
G1:
Specification Code.
****:
Lot No. Code,code change with Lot No.
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MJE13003DG1
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
散件包装
Units 包装数量
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Dimension
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
包装尺寸
Inner Box 盒
(unit:mm3)
Outer Box 箱
1,000
10
10,000
5
50,000
135×190
237×172×102
560×245×195
1,000
10
10,000
10
100,000
135×190
237×172×102
560×245×375
Units/tape
只/纸带
Tape/Inner Box
纸带/盒
Rows/Inner Box
纸带层/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Inner Box 盒
3,000
1
120
10
30,000
328×230×42
/ AMMO
Package Type
封装形式
使用说明
Time:10±1 sec
/ BULK
TO-92
TO-92
Temp:270±5℃
/ Packaging SPEC.
Package Type
封装形式
编带包装
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
(unit:mm3)
Outer Box 箱
小箱 480×346×235,
大箱 547×407×268
/ Notices
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