Infineon IPAW60R600CE 600v coolmos⪠ce power transistor Datasheet

IPAW60R600CE
MOSFET
600VCoolMOSªCEPowerTransistor
PG-TO220FullPAKWideCreepage
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Widedistanceof4.25mmbetweentheleads
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
600
mΩ
ID.
10.3
A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
Package
IPAW60R600CE
PG - TO220 FullPAK
WideCreepage
Final Data Sheet
Marking
60S600CE
1
RelatedLinks
see Appendix A
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IPAW60R600CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
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1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
10.3
6.5
A
TC=25°C
TC=100°C
-
19
A
TC=25°C
-
-
133
mJ
ID=1.3A; VDD=50V; see table 10
EAR
-
-
0.20
mJ
ID=1.3A; VDD=50V; see table 10
Avalanche current, repetitive
IAR
-
-
1.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Full PAK)
Ptot
-
-
28
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
IS
-
-
7.3
A
TC=25°C
Diode pulse current
IS,pulse
-
-
19
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Power dissipation (Non FullPAK)
TO-220
Ptot
-
-
82
W
-
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
1)
Limited by Tj max. Maximum duty cycle D=0.50, TO220 equivalent
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
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IPAW60R600CE
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
4.5
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
4
1.6mm (0.063 in.) from case for 10s
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IPAW60R600CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.2mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.54
1.40
0.60
-
Ω
VGS=10V,ID=2.4A,Tj=25°C
VGS=10V,ID=2.4A,Tj=150°C
Gate resistance
RG
-
10
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
444
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
30
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
21
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
88
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
10
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Rise time
tr
-
8
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Turn-off delay time
td(off)
-
58
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Fall time
tf
-
11
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate to drain charge
Qgd
-
10.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate charge total
Qg
-
20.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
2)
Final Data Sheet
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IPAW60R600CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=3A,Tj=25°C
250
-
ns
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8
-
2.1
-
µC
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8
-
16
-
A
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
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IPAW60R600CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(FullPAK)
Diagram2:Safeoperatingarea(FullPAK)
102
35
1 µs
30
101
10 µs
100 µs
25
1 ms
DC
20
ID[A]
Ptot[W]
100
10 ms
10-1
15
10-2
10
10-3
5
0
0
25
50
75
100
125
10-4
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(FullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
2
101
10
1 µs
101
1 ms
100
100
10 ms
0.2
0.1
ZthJC[K/W]
ID[A]
0.5
10 µs
100 µs
DC
10-1
10-2
0.05
0.02
10-1
0.01
single pulse
10-3
10-4
100
101
102
103
10-2
10-5
10-4
10-3
VDS[V]
10-1
100
101
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
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Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
25
20 V
20 V
10 V
20
8V
10 V
10
8V
15
ID[A]
ID[A]
7V
7V
10
6V
5.5 V
5
6V
5V
5
5.5 V
4.5 V
5V
4.5 V
0
0
5
10
15
20
0
25
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
2.00
1.50
1.30
1.80
1.10
RDS(on)[Ω]
RDS(on)[Ω]
1.60
1.40
0.90
0.70
98%
typ
1.20
0.50
1.00
0.80
0.30
0
5
10
15
20
0.10
-40
-15
10
35
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
60
85
110
135
Tj[°C]
RDS(on)=f(Tj);ID=2.4A;VGS=10V
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600VCoolMOSªCEPowerTransistor
IPAW60R600CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
25
10
25 °C
9
20
8
120 V
7
480 V
150 °C
6
ID[A]
VGS[V]
15
10
5
4
3
5
2
1
0
0
2
4
6
8
10
0
12
0
10
VGS[V]
20
30
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
25 °C
125 °C
140
120
101
IF[A]
EAS[mJ]
100
80
60
0
10
40
20
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=1.3A;VDD=50V
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IPAW60R600CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
660
103
Ciss
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
Crss
540
520
-40
-15
10
35
60
85
110
135
100
160
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
3
Eoss[µJ]
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
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IPAW60R600CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
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600VCoolMOSªCEPowerTransistor
IPAW60R600CE
6PackageOutlines
E
A
A1
D1
D
Q
P
H
b3
b2
b5
L
L1
A2
b
0.381
B A
c
e
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS
DIM
A
A1
A2
b
b2
b3
b5
c
D
D1
E
e
N
H
L
L1
Q
MILLIMETERS
MIN
4.50
2.34
2.65
0.75
0.98
1.00
3.00
0.40
15.47
MAX
4.90
2.74
2.95
0.90
1.26
1.40
0.60
16.27
MIN
0.177
0.092
0.104
0.030
0.039
0.039
0.118
0.016
0.609
MAX
0.193
0.108
0.116
0.035
0.050
0.055
0.024
0.641
9.17
10.70
SCALE
0
2
0
2
4 mm
EUROPEAN PROJECTION
0.361
11.30
0.421
4.25 (BSC)
0.445
0.167 (BSC)
3
28.25
12.58
1.70
3.00
3.10
DOCUMENT NO.
Z8B00176938
INCHES
3
29.45
13.38
2.30
3.30
3.50
1.112
0.495
0.067
0.118
0.122
1.159
0.527
0.091
0.130
0.138
ISSUE DATE
28-04-2015
REVISION
01
Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches
Final Data Sheet
12
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600VCoolMOSªCEPowerTransistor
IPAW60R600CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMCEWebpage:www.infineon.com
• IFXCoolMOSTMCEapplicationnote:www.infineon.com
• IFXCoolMOSTMCEsimulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
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600VCoolMOSªCEPowerTransistor
IPAW60R600CE
RevisionHistory
IPAW60R600CE
Revision:2016-03-31
Previous Revision
Date
Subjects (major changes since last revision)
2015-10-07
Release of final version
2015-10-28
Revised electrical characteristics
2016-03-31
Modified Id ratings
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
14
2016-03-31
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